PROCESS CPD24 Central Fast Recovery Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N4933 thru 1N4937 1N4942 thru 1N4948 1N5615 thru 1N5623 CMR1F-02M Series The Typical Electrical Characteristics data for this chip is currently being revised. BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com For the latest updated data for this Chip Process, please visit our website at: www.centralsemi.com/chip R1 (1-August 2002)