PROCESS CPD05 Central General Purpose Rectifier TM Semiconductor Corp. 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N3611 thru 1N3614 1N4001 thru 1N4007 1N4245 thru 1N4249 1N5059 thru 1N5062 1N5391 thru 1N5399 1N5614 thru 1N5622 CMR1-02 Series CMR1-02M Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16-September 2003) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD05 Typical Electrical Characteristics R2 (16-September 2003)