PROCESS Zener Diode CPZ18 Central TM Semiconductor Corp. 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 9.5 X 9.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 14,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 61,141 PRINCIPAL DEVICE TYPES CMPZ5221B THRU CMPZ5234B BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPZ18 Typical Electrical Characteristics R2 (1-August 2002)