PROCESS CPD83V Central Switching Diode Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com TM PRINCIPAL DEVICE TYPES CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2838 CMPD7000 R1 (25- April 2005) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD83V Typical Electrical Characteristics R1 (25- April 2005)