PROCESS CP191 Central Small Signal Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 41,690 PRINCIPAL DEVICE TYPES 2N2219A 2N2222A CMPT2222A CMST2222A CXT2222A CZT2222A MD2219A PN2222A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP191 Typical Electrical Characteristics R2 (1 -August 2002)