Central CXT5401E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING CODE: FULL PART NUMBER FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max • Low Saturation Voltage 150mV Max @ 50mA • Complementary Device CXT5551E • SOT-89 Surface Mount Package SOT-89 CASE APPLICATIONS: • General purpose switching and amplification • Telephone applications MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO 250 UNITS V VCEO VEBO 220 V 7.0 V Collector Current IC 600 mA Power Dissipation PD 1.2 W TJ,Tstg -65 to +150 °C ΘJA 104 °C/W ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage ♦ Emitter-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL ICBO ICBO VCB=120V VCB=120V, TA=100°C IEBO VEB=3.0V ♦ BVCBO ♦ BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) μA IC=100μ IC=1.0mA μA IE=10μ IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA MAX UNITS 50 nA 50 μA 50 nA 250 V 220 V 7.0 V 100 mV 150 mV 1.00 V 1.00 V ♦ Enhanced Specification R0 (10-May 2006) Central TM CXT5401E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL ♦ hFE ♦ hFE ♦ hFE ♦ hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA UNITS 100 100 VCE=5.0V, IC=50mA VCE=10V, IC=150mA 75 fT Cob VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 100 hfe VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω 40 NF MAX 300 25 300 MHz 6.0 pF 200 f=10Hz to 15.7kHz 8.0 dB ♦ Enhanced Specification SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: FULL PART NUMBER R0 (10-May 2006)