Central CZT5551HC TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO 180 UNITS V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 1.0 A Power Dissipation PD 2.0 W TJ,Tstg -65 to +150 °C ΘJA 62.5 °C/W Collector-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL MAX UNITS ICBO ICBO IEBO VCB=120V 50 nA VCB=120V, TA=100°C VEB=4.0V 50 50 µA nA BVCBO BVCEO BVEBO VCE(SAT) IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA VCE(SAT) VBE(SAT) IC=50mA, IC=10mA, VBE(SAT) 180 160 V V 6.0 0.15 V V IB=5.0mA IB=1.0mA 0.20 V 1.00 V IC=50mA, IB=5.0mA 1.00 V R0 (28-January 2005) Central TM CZT5551HC Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL hFE hFE hFE hFE fT Cob VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz TYP MAX UNITS 80 80 250 30 10 100 VCB=10V, IE=0, f=1.0MHz MHz 15 pF SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER R0 (28-January 2005)