CZT751 SURFACE MOUNT PNP HIGH CURRENT SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT751 type is a PNP Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current applications. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage VCBO 80 UNITS V V Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO 5.0 V Collector Current IC 2.0 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA -65 to +150 °C 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) TEST CONDITIONS VCB=80V VEB=4.0V MIN IC=100µA IC=10mA 80 60 IE=10µA IC=1.0A, IB=100mA IC=2.0A, IB=200mA 5.0 IC=1.0A, IB=100mA VCE=2.0V, IC=1.0A MAX 100 UNITS nA 100 nA V V 0.3 V V 0.5 V 1.2 V 1.0 V R3 (17-June 2004) Central TM CZT751 Semiconductor Corp. SURFACE MOUNT PNP HIGH CURRENT SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS: Continued SYMBOL TEST CONDITIONS MIN hFE VCE=2.0V, IC=50mA VCE=2.0V, IC=500mA 75 IC=1.0A IC=2.0A 75 hFE VCE=2.0V, VCE=2.0V, fT VCE=5.0V, IC=50mA, f=100MHz 75 hFE hFE MAX UNITS 75 40 MHz SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R3 (17-June 2004)