CZT651 SURFACE MOUNT NPN HIGH CURRENT SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT651 type is a NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current applications MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC PD UNITS V V V A W 80 60 5.0 2.0 2.0 TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT TEST CONDITIONS VCB=80V VEB=4.0V IC=100µA IC=10mA IE=10µA IC=1.0A, IB=100mA IC=2.0A, IB=200mA IC=1.0A, IB=100mA VCE=2.0V, IC=1.0A VCE=2.0V, IC=50mA VCE=2.0V, IC=500mA VCE=2.0V, IC=1.0A VCE=2.0V, IC=2.0A VCE=5.0V, IC=50mA, f=100MHz MIN MAX 100 100 80 60 5.0 0.3 0.5 1.2 1.0 75 75 75 40 75 UNITS nA nA V V V V V V V MHz R3 (17-June 2004) Central TM CZT651 Semiconductor Corp. SURFACE MOUNT NPN HIGH CURRENT SILICON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R3 (17-June 2004)