CZT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage VCBO 50 UNITS V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 5.0 A Base Current IB 1.0 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO IEBO VCB=50V 1.0 µA VEB=7.0V IC=10mA 1.0 µA 0.35 V 0.50 V 1.10 V 1.40 V BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE MIN TYP 25 hFE VCE=2.0V, IC=2.0A VCE=2.0V, IC=5.0A fT Cob VCE=6.0V, IC=50mA, f=200MHz VCB=10V, IE=0, f=1.0MHz UNITS V IC=3.0A, IB=150mA IC=4.0A, IB=200mA IC=3.0A, IB=150mA IC=4.0A, IB=200mA VCE=2.0V, IC=500mA MAX 250 550 150 50 150 MHz 50 pF R4 (17-June 2004) Central TM CZT3150 Semiconductor Corp. SURFACE MOUNT NPN SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R4 (17-June 2004)