Central CZT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT953 type is a high current PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: FULL PART NUMBER NPN complement: CZT853 SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO 140 UNITS V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 5.0 A Power Dissipation PD 3.0 W (Note 1) TJ,Tstg -65 to +150 °C ΘJA 41.7 °C/W Collector-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL ICBO ICER ICBO IEBO BVCBO BVCER BVCEO BVEBO MAX UNITS VCB=100V 50 nA VCE=100V, RBE ≤ 1kΩ VCB=100V, TA=100°C 50 nA 1.0 μA 10 nA VEB=6.0V IC=100μA IC=10mA, RBE ≤ 1kΩ IC=10mA TYP 140 170 140 150 V V 100 120 V 6.0 9.0 VCE(SAT) IE=100μA IC=100mA, IB=10mA IC=1.0A, IB=100mA 90 120 mV VCE(SAT) VCE(SAT) IC=2.0A, IC=4.0A, IB=200mA IB=400mA 170 220 mV 320 420 mV VBE(SAT) IC=4.0A, IB=400mA 1.0 1.2 V VCE(SAT) 20 V 50 mV Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum) R2 (30-January 2006) Central TM CZT953 Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP MAX hFE hFE 100 200 300 SYMBOL VCE=1.0V, IC=10mA VCE=1.0V, IC=1.0A VCE=1.0V, IC=3.0A 100 50 70 VCE=1.0V, IC=4.0A VCE=1.0V, IC=10A 30 45 hFE fT Cob VCE=10V, VCB=10V, hFE hFE IC=100mA, f=50MHz IE=0, f=1.0MHz UNITS 15 150 MHz 45 pF SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER R2 (30-January 2006)