RF2495 0 900MHZ 3V LOW CURRENT LNA/MIXER Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion Product Description The RF2495 is a front-end receiver IC chip developed for the handset/portable battery-powered equipment markets. The chip contains an RF 15dB attenuator, an LNA and a passive mixer. By using a state-of-the-art Silicon Bi-CMOS process, the LNA has high dynamic range under low DC operating conditions and the passive mixer requires no DC bias at all. Packaged in the industry-standard MSOP-10 package, the device is well-suited for limited board space applications. 0.038 ± 0.006 0.192 0.008 0.118 0.0197 ± 0.0004 0.004 ± 0.002 0.118 0.014 TYP 0.006 ± 0.002 6.0° 0.0° 0.021 ± 0.004 Optimum Technology Matching® Applied Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT !SiGe Bi-CMOS Package Style: MSOP-10 Features • Single Supply 3V Operation • 1.9dB LNA NF • 0dBm Input IP3 Chip Power ON/OFF VCC1 1 10 PD LNA IN 2 9 GATE GND2 3 8 DRAIN • Small MSOP-10 Package • Low Current Drain (11mA maximum) • Very Low Cost Switched Attenuator GND1 4 7 SOURCE ATTN 5 6 LNA OUT Ordering Information RF2495 RF2495 PCBA Functional Block Diagram Rev A4 030220 900MHz 3V Low Current LNA/Mixer Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 8-281 RF2495 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +3.6 +10 -40 to +85 -40 to +150 VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Specification Min. Typ. Max. Unit 850 to 940 800 to 1000 MHz MHz T=25°C, VCC =3.0V Specifications Usable range 17.0 4.0 +1.0 +12.5 1.9 13.5 dB dB dBm dBm dB dB High gain state Low gain state High gain state, RF IN=-25dBm Low gain state, RF IN=-15dBm High gain state Low gain state dB dB dBm dBm dBm With LO=+2dBm With LO=+4dBm With LO=+2dBm With LO=+4dBm Overall RF/LO Frequency Range Condition LNA Gain Input IP3 15.5 1.0 -2.5 +11.0 Noise Figure Input VSWR Output VSWR 2.2 1.67:1 1.67:1 Mixer Conversion Gain Input IP3 LO Input Level -6.5 -6.0 +7.5 +10.0 -2 -5.5 -5.5 +11.0 +13.0 4.0 VCC -0.3 >1.6 0 Attenuation ATTN Enable ATTN Disable V V Low gain state High gain state >1.6 0 V V Voltage applied to PD pin Voltage applied to PD pin 3.0 2.7 to 3.3 10 <1 V V mA uA 0.3 Power Down Chip Enable Chip Disable VCC -0.3 Power Supply Voltage Current Consumption 8-282 12 3.0 Specifications Operating limits Chip enabled Chip disabled Rev A4 030220 RF2495 Pin 1 Function VCC1 2 LNA_IN Description Interface Schematic Supply voltage for the LNA, bias circuits, and control logic. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. RF Input pin. This pin is internally matched for optimum noise figure from a 50Ω source. This pin is internally DC-biased and, if connected to a device with DC present, should be blocked with a capacitor suitable for the frequency of operation. VBIAS LNA IN GND1 3 GND2 4 GND1 5 ATTN Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection for the LNA circuits. For best performance, keep traces physically short and connect immediately to ground plane. Attenuation pin. A logic high reduces LNA gain by 15dB. See pin 2. VCC ATTN GND2 6 LNA OUT LNA Output pin. This pin requires a connection to VCC through an inductor. 7 SOURCE Connection to source of MOSFET transistor used as mixer. Drain and source are symmetric. LNA OUT DRAIN GATE SOURCE 8 9 DRAIN GATE 10 PD Connection to drain of MOSFET transistor used as mixer. See pin 7. Connection to gate of MOSFET transistor used as mixer. Internally DC-biased. Use DC-blocking capacitor. Power control. A logic “low” turns the part off. A logic “high” (>1.6V) turns the part on. See pin 7. VCC PD GND2 ESD Rev A4 030220 This diode structure is used to provide electrostatic discharge protection to 3kV using the Human body model. The following pins are protected: 1, 3, 5, 9, 10. VCC 8-283 RF2495 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 P1-3 P2 1 VCC1 2 GND 3 ENABLE P2-1 P2-3 CON3 1 VCC2 2 GND 3 ATTN CON3 ENABLE C7 10 pF R1 10 Ω L3 8.2 nH + J2 LO IN C9 6 pF VCC1 + J1 LNA IN 50 Ω µstrip C2 4.7 µF 50 Ω µstrip C4 0.01 µF C14 4.7 pF C3 47 pF C12 2.2 nF Chip Power ON/OFF 1 C1 22 nF 2 L1 12 nH 10 L5 68 nH 9 3 50 Ω µstrip 8 4 7 5 6 C10 5 pF C2 2.4 pF R3 330 Ω J5 IF OUT C11 10 pF L4 10 nH Switched Attenuator ATTN 50 Ω µstrip 50 Ω µstrip J4 RF IN J3 LNA OUT L2 10 nH 2495400A R2 10 Ω C5 47 pF VCC2 8-284 Rev A4 030220 RF2495 Evaluation Board Layout Board Size 1.108” x 1.281” Board Thickness 0.031”, Board Material FR-4 Rev A4 030220 8-285 RF2495 LNA: Gain versus Frequency Over Temperature (VCC=2.78V) 20.0 LNA: IIP3 versus Frequency and P1dB versus Frequency Over Temperature (VCC=2.78V) 5.0 4.0 12.0 -40°C High Gain [dB] 25°C High Gain [dB] 85°C High Gain [dB] -40°C Low Gain [dB] 25°C Low Gain [dB] 85°C Low Gain [dB] 8.0 IIP3 (dBm) and P1dB (dBm) Gain (dB) 16.0 3.0 2.0 -40°C IIP3 [dBm] 25°C IIP3 [dBm] 85°C IIP3 [dBm] -40°C P1dBOut [dBm] 25°C P1dBOut [dBm] 85°C P1dBOut [dBm] 1.0 4.0 0.0 0.0 -1.0 800.0 825.0 850.0 875.0 900.0 925.0 950.0 975.0 1000.0 800.0 825.0 Frequency (MHz) 875.0 900.0 925.0 950.0 975.0 1000.0 Frequency (MHz) LNA: Noise Figure versus Frequency Over Temperature (VCC=2.78V) 3.0 850.0 14.0 Mixer: Conversion Gain versus LO Power, OIP3 versus LO Power Over Temperature Noise Figure (dB) 2.5 2.0 1.5 -40°C Noise Figure [dB] Conversion Gain (dB) and OIP3 (dB) 12.0 10.0 8.0 6.0 4.0 2.0 -40.0°C_Conversion Gain [dB] 25.0°C_Conversion Gain [dB] 85.0°C_Conversion Gain [dB] -40.0°C_OIP3 [dBm] 25.0°C_OIP3 [dBm] 85.0°C_OIP3 [dBm] 0.0 -2.0 -4.0 25°C Noise Figure [dB] 85°C Noise Figure [dB] 1.0 -6.0 -8.0 800.0 825.0 850.0 875.0 900.0 925.0 950.0 975.0 1000.0 Frequency (MHz) 11.0 -2.0 0.0 2.0 4.0 LO Power (dBm) 6.0 8.0 10.0 VCC=2.78V, Freq=900MHz Mixer: Conversion Gain versus Frequency, OIP3 versus Frequency Over Temperature Conversion Gain (dB) and OIP3 (dB) 9.0 7.0 5.0 3.0 -40.0°C Conversion Gain [dB] 25.0°C Conversion Gain [dB] 85.0°C Conversion Gain [dB] -40.0°C OIP3 [dBm] 25.0°C OIP3 [dBm] 85.0°C OIP3 [dBm] 1.0 -1.0 -3.0 -5.0 -7.0 800.0 850.0 900.0 Frequency (MHz) 8-286 950.0 1000.0 VCC=2.78V, LO=4dBm Rev A4 030220