FREESCALE MRF18085BLR3

Freescale Semiconductor
Technical Data
Document Number: MRF18085B
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18085BLR3
MRF18085BLSR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990
MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 85 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930- 1990 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18085BLR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085BLSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
273
1.56
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.79
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF18085BLR3 MRF18085BLSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.21
Vdc
Crss
—
3.6
—
pF
Common- Source Amplifier Power Gain @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
Gps
11.5
12.5
—
dB
Drain Efficiency @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
η
46
50
—
%
Input Return Loss @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
IRL
—
- 12
-9
dB
P1 dB Output Power
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
P1dB
80
90
—
W
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
On Characteristics
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
1. Part is internally matched both on input and output.
MRF18085BLR3 MRF18085BLSR3
2
RF Device Data
Freescale Semiconductor
VSUPPLY
C3
VBIAS
C7
C11
R1
+
C2
R2
C1
C8
R3
RF
INPUT
C10
+
Z1
Z2
C1, C10
C2
C3, C6
C4
C5
C7, C8
C9
C11
R1, R2
R3
Z5
Z6
Z3
Z7
C6
C5
C9
C4
Z4
RF
OUTPUT
DUT
1.0 nF Chip Capacitors, ATC
10 mF, 35 V Tantalum Capacitor
10 pF Chip Capacitors, ATC
3.3 pF Chip Capacitor, ATC
4.7 pF Chip Capacitor, ATC
100 nF Chip Capacitors, ACCU - P (1206)
3.9 pF Chip Capacitor, ATC
470 mF, 63 V Electrolytic Capacitor
1.0 kW Chip Resistors (0805)
2 x 18 kW Chip Resistor (1206)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
1.654″ x 0.082″ Microstrip
0.207″ x 0.082″ Microstrip
0.362″ x 1.260″ Microstrip
0.583″ x 0.669″ Microstrip
0.449″ x 0.179″ Microstrip
0.877″ x 0.082″ Microstrip
0.326″ x 0.082″ Microstrip
0.030″ Glass Teflon® (er = 2.55)
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
C2
C11
VBIAS
C3
R1
VSUPPLY
C7
C10
R2
C1
R3
C8
C6
A1
C4
C9
A2
C5
MRF18085B
Rev 0
Ground
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MRF18085BLR3 MRF18085BLSR3
RF Device Data
Freescale Semiconductor
3
VBIAS
+
C13
ÎÎÎ
ÎÎÎ
ÎÎÎ
C1
C12
T1
R1
VSUPPLY
R5
+
R2
B1
C10
C2
C11
R3
C3
T2
C4
R4
C14
R7
C5
R6
RF
INPUT
Z1
Z2
Z3
Z6
Z7
Z8
Z9
RF
OUTPUT
Z5
Z4
C8
C7
C9
B1
C1, C2
C3, C4
C5
C7
C8
C9
C10
C11, C12
C13
C14
Short RF Ferrite Bead, #27 430119447
1 mF Chip Capacitors, ACCU - P (0805)
1 nF Chip Capacitors, ACCU - P (0805)
10 pF Chip Capacitor, ACCU - P (0805)
1.5 pF Chip Capacitor, ACCU - P (0805)
8.2 pF Chip Capacitor, ACCU - P (0805)
1.0 pF Chip Capacitor, ACCU - P (0805)
100 mF, 63 V Electrolytic Capacitor
10 nF Chip Capacitors (0805)
10 mF, 35 V Tantalum Capacitor
8.2 pF Chip Capacitor, ACCU - P (0805)
R1
R2
R3
R4
R5
R6, R7
T1
T2
Z1 - Z9
Substrate
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ Chip Resistor (0805)
9 Ω Chip Resistors (1206) (18 Ω x 18 Ω)
Voltage Regulator, Micro - 8, #LP2951
NPN Bipolar Transistor, SOT - 23, #BC847
Printed Transmission Lines
0.5 mm Rogers 4350 (er = 3.53)
Figure 3. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Schematic
MRF18085BLR3 MRF18085BLSR3
4
RF Device Data
Freescale Semiconductor
VBIAS
VSUPPLY
Ground
R1
C1
R2
D
T1
R3
R4
C2
T2
+
C10
C13
C3
C12
B1
C14
C5
R5
R6
C4
C11
C7
C8
C9
MRF18085
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Component
Layout
MRF18085BLR3 MRF18085BLSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
(Performed on a GSM EDGE Optimized Demo Board)
14
5
800 mA
600 mA
400 mA
11
VDD = 26 Vdc
f = 1960 MHz
10
1
100
10
Pout, OUTPUT POWER (WATTS)
VDD = 26 Vdc
IDQ = 800 mA
4
Pout = 38 W Avg.
3.5
3
2.5
28 W Avg.
2
1.5
19 W Avg.
1
0.5
0
1.91
Figure 5. Power Gain versus Output Power
1.94 1.95 1.96 1.97
f, FREQUENCY (GHz)
1.98
1.99
2.0
6
EVM, ERROR VECTOR MAGNITUDE (%)
14
G ps, POWER GAIN (dB)
1.93
Figure 6. Error Vector Magnitude versus
Frequency
13.5
13
12.5
32 V
12
11.5
28 V
11
24 V
10.5
10
VDD = 20 V
9.5
9
14
5
13
Gps
4
12
3
11
2
10
EVM
1
9
8
0
0
20
60
80
40
Pout, OUTPUT POWER (WATTS)
100
34
Figure 7. Power Gain versus Output Power
13.5
30 W
−10
15
50
14
40
−20
−25
11.5
80 W
11
1.85
1.90
1.95
f, FREQUENCY (GHz)
VDD = 26 Vdc
IDQ = 800 mA
2.00
Figure 9. Power Gain and IRL
versus Frequency
50
60
12.5
12
48
16
−15
30 W
40
42
44
46
38
Pout, OUTPUT POWER (dBm) AVG.
−5
13
80 W
36
Figure 8. EVM and Gain versus Output Power
G ps, POWER GAIN (dB)
14
G ps, POWER GAIN (dB)
1.92
G ps , POWER GAIN (dB)
12
4.5
Gps
13
30
12
20
−30
11
−35
2.05
10
h
1
VDD = 26 Vdc
IDQ = 800 mA
f = 1960 MHz
10
Pout, OUTPUT POWER (WATTS)
η , DRAIN EFFICIENCY (%)
13
G ps, POWER GAIN (dB)
EVM, ERROR VECTOR MAGNITUDE (%)
IDQ = 1000 mA
10
0
100
Figure 10. Power Gain and Efficiency
versus Output Power
MRF18085BLR3 MRF18085BLSR3
6
RF Device Data
Freescale Semiconductor
GSM TEST SIGNAL
−10
−20
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−30
−40
(dB)
−50
−60
−70
−80
−90
400 kHz
400 kHz
600 kHz
600 kHz
−100
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 11. EDGE Spectrum
MRF18085BLR3 MRF18085BLSR3
RF Device Data
Freescale Semiconductor
7
Zo = 5 Ω
f = 1990 MHz
Zload
f = 1805 MHz
f = 1805 MHz
f = 1990 MHz
Zsource
VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW
f
MHz
Zsource
Ω
Zload
Ω
1805
1.43 - j3.74
2 - j3.60
1880
1.27 - j3.95
1.98 - j3.57
1930
1.5 - j4.13
2.13 - j3.16
1990
1.86 - j4.76
2.17 - j3.36
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF18085BLR3 MRF18085BLSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF18085BLR3 MRF18085BLSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF18085BLR3 MRF18085BLSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF18085BLR3
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
2X
2
B
(FLANGE)
K
D
bbb
M
T A
B
M
N
M
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
CASE 465A - 06
ISSUE H
NI - 780S
MRF18085BLSR3
MRF18085BLR3 MRF18085BLSR3
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF18085BLR3 MRF18085BLSR3
Document Number: MRF18085B
Rev. 6, 5/2006
12
RF Device Data
Freescale Semiconductor