Freescale Semiconductor Technical Data Document Number: MRF21090 Rev. 8, 5/2006 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power — 11.5 Watts Efficiency — 16% Gain — 12.2 dB ACPR — - 45 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2110 - 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF21090R3 CASE 465C - 02, STYLE 1 NI - 880S MRF21090SR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 270 1.54 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.65 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF21090R3 MRF21090SR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model MRF21090R3 MRF21090SR3 2 (Minimum) 1 (Minimum) Machine Model MRF21090R3 MRF21090SR3 M3 (Minimum) M4 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.2 — S Gate Threshold Voltage (VDS = 10 V, ID = 300 μA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 750 mA) VGS(Q) 3 3.8 5 Vdc Drain- Source On - Voltage (VGS = 10 V, ID = 1 A) VDS(on) — 0.1 0.6 Vdc Crss — 4.2 — pF Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 10 11.7 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) η 30 33 — % Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — - 30 - 27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — - 12 - 9.0 dB Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Gps — 11.7 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) η — 41 — % Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) 1. Part is internally matched both on input and output. MRF21090R3 MRF21090SR3 2 RF Device Data Freescale Semiconductor R2 V DD B1 R1 VGG + Z11 + C2 C1 C3 + C7 + C10 C9 C8 + C11 C13 C4 RF OUTPUT Z10 RF INPUT Z6 C6 Z1 Z2 Z3 Z4 C3, C9 C4, C8 C5, C12 C6 C7 C11 C14 R1 R2 Z1 Z2 Z3 Z4 Z5 Z6 C14 Z8 Z9 C12 Z5 DUT C5 B1 C1, C13 C2, C10 Z7 Ferrite Bead, Fair Rite #2743019447 470 μF, 50 V Electrolytic Capacitors 22 μF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 20 nF Chip Capacitors, ATC #100B203MCA500X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitor, ATC #100B100JCA500X 1 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1 nF Chip Capacitor, ATC #100B102JCA500X 8.2 pF Chip Capacitor, ATC #100B8R2CCA500X 13 Ω, 1/4 W Chip Resistor, Garret Instrument #RM73B2B130JT, 12 Ω, 1/4 W Chip Resistor, Garret Instrument #RM73B2B120JT 30.7 x 2.09 mm Microstrip 5.99 x 2.09 mm Microstrip 7.55 x 9.89 mm Microstrip 3.77 x 15.71 mm Microstrip 6.89 x 26.17 mm Microstrip 14.93 x 32.05 mm Microstrip Z7 Z8 Z9 Z10 Z11 WS1, WS2 10.23 x 2.09 mm Microstrip 6.03 x 2.09 mm Microstrip 23.98 x 2.09 mm Microstrip 29.82 x 1.15 mm Microstrip 17.08 x 1.15 mm Microstrip Beryllium Copper Wear Blocks 5 mils Thick Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type N Jack Connectors, 3052 - 1648- 10, Omni Specra 4 - 40 Head Screws 0.125″ Long 4 - 40 Head Screws 0.188″ Long 4 - 40 Head Screws 0.312″ Long 4 - 40 Head Screws 0.438″ Long Endplates Brass Endplates for Copper Bedstead Bedstead Copper Bedstead/Heatsink Insert Copper Bedstead Insert Raw PCB 0.030″ Glass Teflon®, 2 oz Copper Clad 3″ x 5″ Arion RF Circuit 3″ x 5″ Copper Clad PCB Teflon®, MRF21090, CMR Figure 1. MRF21090R3(SR3) Test Circuit Schematic C7 C8 Gate Bias Feed C2 C6 C5 Drain Bias Feed R2 R1 C9 C3 C4 C1 B1 C U T O U T C11 C10 C13 C14 C12 MRF21090 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21090R3(SR3) Test Circuit Component Layout MRF21090R3 MRF21090SR3 RF Device Data Freescale Semiconductor 3 −10 40 −15 η VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 750 mA Two−Tone Measurement 100 kHz Tone Spacing 30 20 Gps −20 −25 −30 10 IMD 0 −35 2100 2080 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 25 ACPR 15 10 5 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 2000 mA 1500 mA −40 −50 1000 mA −55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 −70 5.0 0 10 15 20 VDD = 28 Vdc IDQ = 750 mA f = 2140 MHz Two−Tone Measurement 100 kHz Tone Spacing −30 −40 3rd Order 5th Order −50 7th Order −60 −70 −80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 6. Intermodulation Distortion Products versus Output Power 11.8 15 2000 mA VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement 100 kHz Tone Spacing 1500 mA 13 1000 mA 12 800 mA 11 −22 11.6 G ps, POWER GAIN (dB) 14 G ps, POWER GAIN (dB) −60 η −20 Figure 5. Intermodulation Distortion versus Output Power −24 11.4 11.2 Gps Pout = 90 W (PEP) IDQ = 750 mA f = 2140 MHz Two−Tone Measurement 100 kHz Tone Spacing Fixture Tuned for 28 Volts −26 −28 11.0 −30 10.8 −32 500 mA 10 −50 Gps Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 500 mA 800 mA −40 Pout, OUTPUT POWER (WATTS) AVG. −25 −45 −30 20 Figure 3. Class AB Broadband Circuit Performance VDD = 28 Vdc f = 2140 MHz −30 Two−Tone Measurement 100 kHz Tone Spacing −35 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power IMD 100 10.6 20 22 24 26 28 30 VDS, DRAIN VOLTAGE (VOLTS) 32 34 IMD, INTERMODULATION DISTORTION (dBc) IRL 50 −20 30 ADJACENT CHANNEL POWER RATIO (dB) −5 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB 60 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB TYPICAL PERFORMANCE (IN FREESCALE TEST FIXTURE) −34 Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21090R3 MRF21090SR3 4 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 2170 MHz 2110 MHz Zload Zsource f = 2110 MHz 2170 MHz VDD = 28 V, IDQ = 750 mA, Pout = 90 W (PEP) f MHz Zsource Ω Zload Ω 2110 3.03 - j3.40 0.92 - j1.67 2140 3.02 - j3.46 0.97 - j1.80 2170 2.60 - j3.50 0.90 - j1.52 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21090R3 MRF21090SR3 RF Device Data Freescale Semiconductor 5 NOTES MRF21090R3 MRF21090SR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 2X 1 Q bbb M T A M B M B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. 3 K 2 bbb M D T A M B M R M bbb M T A M B M T A M B M T A B M S M N ccc ccc (INSULATOR) aaa (LID) M T A B M (LID) M (INSULATOR) M M H F C E T A A (FLANGE) SEATING PLANE CASE 465B - 03 ISSUE D NI - 880 MRF21090R3 B DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K 2 bbb M D T A M B M M bbb M T A M B ccc M T A M B ccc M N R (INSULATOR) M T A M B M S (LID) aaa M T A M B (LID) M (INSULATOR) M H C F E T A A (FLANGE) DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF21090SR3 MRF21090R3 MRF21090SR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21090R3 MRF21090SR3 Document Number: MRF21090 8Rev. 8, 5/2006 RF Device Data Freescale Semiconductor