FREESCALE MRF18085ALR3

Freescale Semiconductor
Technical Data
Document Number: MRF18085A
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18085ALR3
MRF18085ALSR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications. To be used in Class AB for PCN - PCS/
cellular radio and WLL applications. Specified for GSM - GSM EDGE
1805- 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band
(1805 - 1880 MHz)
Power Gain - 15 dB (Typ) @ 85 Watts CW
Efficiency - 52% (Typ) @ 85 Watts CW
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1805- 1880 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18085ALR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085ALSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
273
1.56
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.79
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF18085ALR3 MRF18085ALSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.15
—
Vdc
Crss
—
3.6
—
pF
Common- Source Amplifier Power Gain @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
Gps
13.5
15
—
dB
Drain Efficiency @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
η
48
52
—
%
Input Return Loss @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
IRL
—
- 12
-9
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
P1dB
83
90
—
Watts
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
On Characteristics
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch- to - batch consistency.
MRF18085ALR3 MRF18085ALSR3
2
RF Device Data
Freescale Semiconductor
VSUPPLY
C7
VBIAS
C8
C9
R1
+
C4
R2
C6
C5
R3
RF
INPUT
+
C2
Z1
Z2
Z5
Z8
Z9
Z10
Z6
Z11
C10
C1
Z3
C1, C3, C6, C7
C2
C4
C5, C8
C9
C10
R1, R2
R3
Z1
Z2
Z3
Z4
Z7
Z12
RF
OUTPUT
C3
DUT
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
PCB
10 pF Chip Capacitors, ATC
1.8 pF Chip Capacitor, ATC
10 mF, 35 V Tantalum Capacitor, AVX
1 nF Chip Capacitors, ATC
220 mF, 63 V Electrolytic Capacitor, Radial, Philips
0.3 pF Chip Capacitor, ATC
10 kW, 1/4 W Chip Resistors (1206)
1.0 kW, 1/4 W Chip Resistor (1206)
0.671″ x 0.087″ Microstrip
0.568″ x 0.087″ Microstrip
0.500″ x 0.098″ Microstrip Shorted Stub
0.610″ x 00.118″ Microstrip
0.331″ x 1.153″ Microstrip
0.063″ x 1.153″ Microstrip
0.122″ x 0.925″ Microstrip
0.547″ x 0.925″ Microstrip
0.394″ x 0.177″ Microstrip
0.180″ x 0.087″ Microstrip
0.686″ x 0.087″ Microstrip
0.294″ x 0.087″ Microstrip
Taconic TLX8, 30 mils, εr = 2.55
Figure 1. 1805 - 1880 MHz Test Fixture Schematic
C9
R1
C4
C5 C6
C7
C8
R2
C2
C1
Strap
CUT OUT AREA
R3
C3
C10
MRF18085A
Rev0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1805 - 1880 MHz Test Fixture Component Layout
MRF18085ALR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS
17
17
IDQ = 1000 mA
800 mA
15
16
15
G ps , POWER GAIN (dB)
600 mA
14
13
400 mA
12
11
12
32 V
28 V
11
10
1
10
100
1000
24 V
IDQ = 800 mA
f = 1840 MHz
TC = 25_C
8
0
VDD = 20 V
1
0.1
10
100
1000
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 3. Power Gain versus Output Power
Figure 4. Power Gain versus Output Power
120
17
Pin = 8 W
VDD = 26 Vdc
IDQ = 800 mA
f = 1840 MHz
TC = 25_C
Pout , OUTPUT POWER (WATTS)
16
G ps , POWER GAIN (dB)
13
9
10
15
14
50_C
85_C
13
12
11
10
1
10
1000
100
80
60
0.5 W
20
1820
1840
1860
1900
1880
Figure 5. Power Gain versus Output Power
Figure 6. Output Power versus Frequency
0
16
60
Gps
−4
Gps @ 80 W
−8
14
−12
15
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
Gps @ 30 W
15
50
14
40
VDD = 26 Vdc
IDQ = 800 mA
f = 1840 MHz
TC = 25_C
13
−16
IRL @ 30 W
−20
IRL @ 80 W
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
11
10
1750
1W
40
f, FREQUENCY (MHz)
16
12
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
Pout, OUTPUT POWER (WATTS)
17
13
4W
100
0
1800
9
G ps , POWER GAIN (dB)
14
1800
1850
1900
−24
−28
1950
12
30
20
11
10
η
10
0.1
1
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
16
VDD = 26 Vdc
f = 1840 MHz
TC = 25_C
10
100
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Frequency
Figure 8. Power Gain and Efficiency versus
Output Power
0
1000
MRF18085ALR3 MRF18085ALSR3
4
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 1990 MHz
Zload
f = 1990 MHz
f = 1710 MHz
f = 1710 MHz
Zsource
VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW
f
MHz
Zsource
Ω
Zload
Ω
1710
1.13 - j3.62
1.79 - j2.88
1785
1.61 - j4.23
1.82 - j3.15
1805
1.69 - j4.34
1.90 - j2.66
1880
2.83 - j5.25
2.09 - j2.77
1930
3.00 - j5.18
2.01 - j2.44
1960
4.39 - j4.97
2.01 - j2.57
1990
6.59 - j4.74
1.79 - j2.37
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF18085ALR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
5
NOTES
MRF18085ALR3 MRF18085ALSR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF18085ALR3
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
2X
2
B
(FLANGE)
K
D
bbb
M
T A
B
M
N
M
(LID)
ccc
M
R
M
T A
M
B
M
M
B
M
ccc
M
T A
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
CASE 465A - 06
ISSUE H
NI - 780S
MRF18085ALSR3
MRF18085ALR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
7
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF18085ALR3 MRF18085ALSR3
Document Number: MRF18085A
8Rev. 6, 5/2006
RF Device Data
Freescale Semiconductor