FREESCALE MRF6S18140HR3

Freescale Semiconductor
Technical Data
Document Number: MRF6S18140H
Rev. 0, 9/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S18140HR3
MRF6S18140HSR3
Designed for N- CDMA base station applications with frequencies from 1805
to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — - 36 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 50.5 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1805 - 1880 MHz, 29 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S18140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S18140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 73°C, 29 W CW
RθJC
0.31
0.35
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.8
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.2
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
685
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg., f1 = 1805 MHz,
f2 = 1807.5 MHz and f1 = 1877.5 MHz, f2 = 1880 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
25.5
27.5
—
%
Intermodulation Distortion
IM3
—
- 36
- 34.5
dBc
ACPR
—
- 50.5
- 48
dBc
IRL
—
- 10.5
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
MRF6S18140HR3 MRF6S18140HSR3
2
RF Device Data
Freescale Semiconductor
VSUPPLY
+
B1
R3
C10
VBIAS
+
R5
C8
C4
C6
C13
Z16
Z18
RF
INPUT
C12
C16
R1
RF
OUTPUT
Z23
Z19 Z20 Z21 Z22
Z14
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10 Z11 Z12
C2
Z13
Z17
C1
DUT
B2
R4
C9
0.166″
0.250″
0.140″
0.092″
0.130″
0.109″
0.070″
0.350″
0.092″
0.720″
0.090″
0.342″
C11
C14
C15
R2
+
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z15
x 0.082″
x 0.334″
x 0.340″
x 0.164″
x 0.234″
x 0.082″
x 0.082″
x 0.644″
x 0.420″
x 0.082″
x 0.485″
x 1.070″
R6
C5
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.580″ Taper
Microstrip
C7
C3
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
0.108″ x 1.070″ Microstrip
0.960″ x 0.046″ Microstrip
0.084″ x 0.046″ Microstrip
0.996″ x 0.080″ Microstrip
1.015″ x 0.080″ Microstrip
0.099″ x 1.070″ Microstrip
0.516″ x 1.070″ Microstrip
0.292″ x 0.288″ Microstrip
0.198″ x 0.114″ Microstrip
0.372″ x 0.080″ Microstrip
1.181″ x 0.080″ Microstrip
DS Electronics GX0300, 0.030″, εr = 2.55
Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
47 Ω, 100 MHz Small Ferrite Beads, Surface Mount
2743019447
Fair - Rite
C1, C2
39 pF Chip Capacitors
700B390FW500XT
ATC
C3
0.1 pF Chip Capacitor
100B0R1BP500X
ATC
C4, C5, C12, C13,
C14, C15
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C6, C7, C10, C11
9.1 pF Chip Capacitors
600B9R1BT250XT
ATC
C8, C9
47 μF, 50 V Electrolytic Capacitors
MVK50VC47RM8X10TP
United Chemi - Con
C16
470 μF, 63 V Electrolytic Capacitor
NACZF471M63V
Nippon Chemi - Con
R1, R2
12 Ω, 1/8 W Resistors
CRCW120612R0F100
Dale/Vishay
R3, R4
1.0 KΩ, 1/8 W Resistors
CRCW12061001F100
Dale/Vishay
R5, R6
560 KΩ, 1/8 W Chip Resistors
CRCW12065602F101
Dale/Vishay
MRF6S18140HR3 MRF6S18140HSR3
RF Device Data
Freescale Semiconductor
3
C10
B1 R1
R3
C12 C13
C6
C8
+
C16
R5
C4
C1
R6
+
C9
C5
C3
CUT OUT AREA
C2
C14 C15
R4
B2
R2
C7
C11
MRF6S18140H/HS
Rev. 1
Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout
MRF6S18140HR3 MRF6S18140HSR3
4
RF Device Data
Freescale Semiconductor
30
ηD
29
28
Gps, POWER GAIN (dB)
16.4
16.2
Gps
16
15.8
15.6
27
VDD = 28 Vdc, Pout = 29 W (Avg.)
IDQ = 1200 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
26
−24
−30
−36
15.4
IM3
15.2
−42
IRL
−48
15
14.8
1760
ACPR
1780
1800
1820
1840
1860
1880
1900
−54
1920
IM3 (dBc), ACPR (dBc)
16.6
0
−4
−8
−12
−16
−20
IRL, INPUT RETURN LOSS (dB)
16.8
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
42
ηD
41
16
40
15.8
39
15.6
VDD = 28 Vdc, Pout = 60 W (Avg.)
IDQ = 1200 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
Gps
15.4
15.2
38
−12
−18
−24
15
14.6
14.4
1760
−30
IM3
14.8
IRL
−36
ACPR
1780
1800
1820
1840
1860
1880
1900
−42
1920
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
16.2
0
−4
−8
−12
−16
−20
IRL, INPUT RETURN LOSS (dB)
16.4
ηD, DRAIN
EFFICIENCY (%)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 29 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 60 Watts Avg.
−10
IDQ = 1800 mA
18
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
19
1500 mA
17
1200 mA
16
900 mA
15
14 600 mA
VDD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
13
VDD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
IDQ = 600 mA
1800 mA
−40
−50
1500 mA
900 mA
1200 mA
−60
1
10
100
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S18140HR3 MRF6S18140HSR3
RF Device Data
Freescale Semiconductor
5
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two−Tone Measurements
−20
−30
3rd Order
−40
−50
5th Order
7th Order
−60
−70
1
10
100
−5
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA
Two−Tone Measurements,
(f1 + f2)/2 = Center Frequency of 1840 MHz
−10
−15
−20
−25
IM3−U
−30
−35
IM3−L
−40
IM5−U
−45
IM5−L
−50
IM7−L
IM7−U
−55
400
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
Ideal
Pout, OUTPUT POWER (dBm)
59
P6dB = 53.90 dBm (245.47 W)
58
57
P3dB = 53.36 dBm (216.77 W)
56
55 P1dB = 52.6 dBm (182.64 W)
54
Actual
53
52
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1840 MHz
51
50
49
32
33
34
35
36
37
38
39
40
41
42
43
44
Pin, INPUT POWER (dBm)
50
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1838.75 MHz, f2 = 1841.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
IM3
@ 0.01% Probability (CCDF)
45
40
35
30
25_C
−30_C
−20
−25
−30
85_C
−35
−40
−45
25
20
−50
Gps
15
TC = −30_C
10
ηD
−55
85_C
ACPR
25_C
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
−60
−65
5
0
1
10
−70
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S18140HR3 MRF6S18140HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
Gps
17
25_C
16
44
85_C
15
33
14
22
VDD = 28 Vdc
IDQ = 1200 mA
f = 1840 MHz
ηD
13
11
10
IDQ = 1200 mA
f = 1840 MHz
16
15
14
VDD = 24 V
12
1
17
66
25_C
85_C 55
Gps, POWER GAIN (dB)
−30_C
TC = −30_C
ηD, DRAIN EFFICIENCY (%)
18
32 V
13
0
400
100
28 V
0
100
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
260
MTTF FACTOR (HOURS X AMPS2)
1010
109
108
107
106
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S18140HR3 MRF6S18140HSR3
RF Device Data
Freescale Semiconductor
7
100
0
1.2288 MHz
Channel BW
−10
−20
1
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
10
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
0.0001
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
Figure 14. 2 - Carrier CCDF N - CDMA
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 15. 2 - Carrier N - CDMA Spectrum
MRF6S18140HR3 MRF6S18140HSR3
8
RF Device Data
Freescale Semiconductor
f = 1920 MHz
Zo = 10 Ω
Zload
f = 1760 MHz
f = 1920 MHz
Zsource
f = 1760 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg.
f
MHz
Zsource
W
Zload
W
1760
1.454 - j6.703
1.344 - j2.479
1780
1.465 - j6.511
1.338 - j2.299
1800
1.467 - j6.336
1.333 - j2.129
1820
1.448 - j6.193
1.325 - j1.966
1840
1.440 - j6.049
1.308 - j1.801
1860
1.414 - j5.938
1.301 - j1.687
1880
1.377 - j5.827
1.303 - j1.550
1900
1.311 - j5.710
1.301 - j1.419
1920
1.231 - j5.583
1.289 - j1.303
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S18140HR3 MRF6S18140HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
(LID)
B
M
S
(LID)
aaa
M
T A
M
(INSULATOR)
B
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE D
NI - 880
MRF6S18140H
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
SEATING
PLANE
(FLANGE)
CASE 465C - 02
ISSUE D
NI - 880S
MRF6S18140HS
MRF6S18140HR3 MRF6S18140HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
Revision
Number
Sept. 2006
0
Description
• Initial Release of Data Sheet
MRF6S18140HR3 MRF6S18140HSR3
RF Device Data
Freescale Semiconductor
11
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MRF6S18140HR3 MRF6S18140HSR3
Document Number: MRF6S18140H
Rev. 0, 9/2006
12
RF Device Data
Freescale Semiconductor