Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. N - CDMA Application • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watt Avg., Full Frequency Band (865 - 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.2 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset = - 47.1 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 40% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.8% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 19 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 865 - 960 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 398 2.3 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 76°C, 27 W CW RθJC Unit °C/W 0.44 0.45 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 2.1 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) VGS(Q) 2 2.89 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) VDS(on) 0.05 0.23 0.3 Vdc gfs — 6 — S Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 60 — pF Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 8 Adc) Dynamic Characteristics (3) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps 19 20.2 24 dB ηD 29 31 — % ACPR — - 47.1 - 45 dBc IRL — - 16 -9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally input matched. (continued) MRF6S9125NR1 MRF6S9125NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg., 921 - 960 MHz, EDGE Modulation Power Gain Gps — 20 — dB Drain Efficiency ηD — 40 — % Error Vector Magnitude EVM — 1.8 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 921 - 960 MHz Power Gain Gps — 19 — dB Drain Efficiency ηD — 62 — % IRL — - 12 — dB P1dB — 125 — W Input Return Loss Pout @ 1 dB Compression Point, CW (f = 880 MHz) MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 3 R1 VBIAS + C10 RF INPUT C9 C18 + + C8 C7 R2 C6 Z2 Z3 Z4 Z5 Z6 + + C20 C21 C22 L2 L1 Z1 C19 Z9 C4 Z7 Z10 Z11 C11 C12 Z12 Z13 Z14 Z15 Z16 C13 C14 C15 C16 Z8 C1 VSUPPLY + C23 RF Z17 OUTPUT C17 DUT C3 C2 Z1, Z17 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.200″ 1.060″ 0.382″ 0.108″ 0.200″ 0.028″ 0.236″ 0.050″ 0.238″ x 0.080″ x 0.080″ x 0.220″ x 0.220″ x 0.420″ x 0.620″ x 0.620″ x 0.620″ x 0.620″ C5 Microstrip Microstrip Microstrip Microstrip x 0.620″ Taper Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.057″ x 0.620″ Microstrip 0.119″ x 0.620″ Microstrip 0.450″ x 0.220″ Microstrip 0.061″ x 0.220″ Microstrip 0.078″ x 0.220″ Microstrip 0.692″ x 0.080″ Microstrip 0.368″ x 0.080″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S9125NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 20 pF Chip Capacitor 600B200FT250XT ATC C2 6.2 pF Chip Capacitor 600B6R2BT250XT ATC C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4, C5 11 pF Chip Capacitors 600B110FT250XT ATC C6, C18, C19 0.56 μF, 50 V Chip Capacitors C1825C564J5RAC Kemet C7, C8 47 μF, 16 V Tantalum Capacitors 593D476X9016D2T Vishay C9, C23 47 pF Chip Capacitors 700B470FW500XT ATC C10 100 μF, 50 V Electrolytic Capacitor 515D107M050BB6A Vishay C11, C12 12 pF Chip Capacitors 600B120FT250XT ATC C13, C14 5.1 pF Chip Capacitors 600B5R1BT250XT ATC C16 0.3 pF Chip Capacitor 700B0R3BW500XT ATC C17 39 pF Chip Capacitor 700B390FW500XT ATC C20, C21 22 μF, 35 V Tantalum Capacitors T491X226K035AS Kemet C22 470 μF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi - Con L1 7.15 nH Inductor 1606 - 7J CoilCraft L2 8.0 nH Inductor A03T CoilCraft R1 15 Ω, 1/4 W Chip Resistor (1210) R2 560 kΩ, 1/8 W Resistor (1206) MRF6S9125NR1 MRF6S9125NBR1 4 RF Device Data Freescale Semiconductor C20 C21 C8 C7 C22 C9 VGG C10 C6 R2 C4 R1 VDD C19 C23 C18 C11 C14 C1 C17 C2 C5 C3 CUT OUT AREA L2 L1 C13 C15 C16 C12 900 MHz TO272 WB Rev. 0 Figure 2. MRF6S9125NR1(NBR1) Test Circuit Component Layout MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 5 32 Gps ηD 20 30 VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 19.8 19.5 28 −30 IRL 19.3 ACPR 19 18.8 −40 −50 −60 ALT1 −70 910 18.5 850 860 870 880 890 900 −5 −10 −15 −20 −25 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 20.3 ACPR (dBc), ALT1 (dBc) 34 20.5 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 48 Gps, POWER GAIN (dB) 19.4 19.2 ηD 44 VDD = 28 Vdc, Pout = 62.5 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 19 18.8 40 −30 ACPR 18.6 IRL 18.4 −50 ALT1 18.2 18 850 860 870 880 −40 890 900 −60 −70 910 −5 −10 −15 −20 −25 IRL, INPUT RETURN LOSS (dB) 52 Gps ACPR (dBc), ALT1 (dBc) 19.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg. 22 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1475 mA Gps, POWER GAIN (dB) 21 1187 mA 20 950 mA 712 mA 19 475 mA 18 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements −20 IDQ = 1425 mA −30 712 mA 475 mA −40 −50 1187 mA 950 mA −60 16 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 300 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9125NR1 MRF6S9125NBR1 6 RF Device Data Freescale Semiconductor −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 950 mA f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements −20 −30 −40 3rd Order −50 5th Order −60 7th Order −70 1 10 100 −10 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 950 mA, Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −20 3rd Order −30 5th Order −40 −50 7th Order −60 300 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP TWO −TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 100 56 Pout, OUTPUT POWER (dBm) Ideal P3dB = 52.4 dBm (172.5 W) 55 54 P1dB = 51.5 dBm (139.3 W) 53 52 Actual 51 50 VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 49 48 28 29 30 31 32 33 34 35 36 Pin, INPUT POWER (dBm) 50 VDD = 28 Vdc, IDQ = 950 mA f = 880 MHz, N−CDMA IS−95 (Pilot 40 Sync, Paging, Traffic Codes 8 Through 13) −30 TC = −30_C 25_C ηD ALT1 30 −50 −30_C 25_C 85_C Gps 20 25_C −30_C −70 85_C 0 0.1 1 −60 ACPR 25_C 10 −40 85_C 10 100 −80 200 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 22 TC = −30_C 50 25_C 40 85_C 19 ηD 18 30 Gps 17 25_C 16 VDD = 28 Vdc IDQ = 950 mA f = 880 MHz 85_C 15 1 10 100 20 20 Gps, POWER GAIN (dB) 20 60 ηD, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB) 21 70 −30_C 19 32 V 18 28 V 24 V 17 16 V 10 0 200 20 V IDQ = 950 mA f = 880 MHz VDD = 12 V 16 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 250 MTTF FACTOR (HOURS X AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S9125NR1 MRF6S9125NBR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . −ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW .................. ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ...... ........... ...... ... .......... ........... −100 PEAK −TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 9 f = 900 MHz Zload f = 860 MHz Zo = 5 Ω Zsource f = 900 MHz f = 860 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz Zsource Ω Zload Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 0.62 - j2.45 1.66 - j0.02 875 0.59 - j2.43 1.73 + j0.04 880 0.57 - j2.42 1.74 + j0.11 885 0.54 - j2.36 1.68 + j0.19 890 0.57 - j2.18 1.61 + j0.25 895 0.58 - j1.94 1.52 + j0.33 900 0.59 - j1.86 1.48 + j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S9125NR1 MRF6S9125NBR1 10 RF Device Data Freescale Semiconductor EDGE CHARACTERIZATION L1 VBIAS + + + C21 C1 C2 C16 C10 Z9 Z8 Z1 Z2 Z3 + C18 C19 C20 Z4 Z5 Z10 Z11 Z12 Z6 C7 C6 0.150″ 1.050″ 0.330″ 0.220″ 0.420″ 0.200″ 0.040″ x 0.080″ x 0.080″ x 0.220″ x 0.100″ x 0.100″ x 0.620″ x 0.620″ Z14 C13 C14 RF OUTPUT Z15 C15 C9 C5 Z13 C8 Z7 C4 Z1, Z15 Z2 Z3 Z4 Z5 Z6 Z7, Z8 + L2 C3 R1 RF INPUT C17 VSUPPLY + C11 C12 DUT Microstrip Microstrip Microstrip x 0.420″ Taper x 0.620″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 PCB 0.620″ x 0.100″ x 0.420″ Taper 0.420″ x 0.100″ x 0.220″ Taper 0.325″ x 0.220″ Microstrip 0.040″ x 0.220″ Microstrip 0.475″ x 0.080″ Microstrip 0.400″ x 0.080″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 17. MRF6S9125NR1(NBR1) Test Circuit Schematic Table 7. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 μF, 16 V Tantalum Capacitors TPSD476K016R0150 AVX C3, C16, C17 0.56 μF, 50 V Chip Capacitors C1825C564J5GAC Kemet C4 20 pF Chip Capacitor 600B200FT250XT ATC C5, C7, C8 6.2 pF Chip Capacitors 600B6R2BT250XT ATC C6, C13 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson Dielectrics C9, C10 11 pF Chip Capacitors 600B110FT250XT ATC C11 5.1 pF Chip Capacitor 600B5R1BT250XT ATC C12 4.7 pF Chip Capacitor 600B4R7BT250XT ATC C14 0.3 pF Chip Capacitor 700B0R3BW500XT ATC C15 39 pF Chip Capacitor 700B390FW500XT ATC C18, C19 22 μF, 35 V Tantalum Capacitors T491X226K035AS Kemet C20 470 μF, 63 V Electrolytic Capacitor NACZF471M63V Nippon C21 100 μF, 50 V Electrolytic Capacitor 515D107M050BB6A Multicomp L1 7.15 nH Inductor 1606 - 7 Coilcraft L2 8 nH Inductor A03T - 5 Coilcraft R1 15 Ω, 1/4 W Chip Resistor MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 11 EDGE CHARACTERIZATION C1 C21 C3 C2 C17 C18 C19 C20 L1 C16 R1 C12 C10 C8 C5 C7 C6 CUT OUT AREA L2 C4 C11 C9 C14 C13 C15 900 MHz TO−272 WB Rev. 2 Figure 18. MRF6S9125NR1(NBR1) Test Circuit Component Layout MRF6S9125NR1 MRF6S9125NBR1 12 RF Device Data Freescale Semiconductor EDGE CHARACTERIZATION 15 VDD = 28 Vdc IDQ = 700 mA 4 Pout = 70 W Avg. 3.5 3 2.5 60 W Avg. 2 1.5 1 20 W Avg. 0.5 0 900 910 920 930 940 950 960 970 980 75 12 990 60 9 45 ηD 6 30 3 15 0 1 10 0 300 100 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 19. EVM versus Frequency SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) TC = 25_C EVM VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation ηD, DRAIN EFFICIENCY (%) 4.5 EVM, ERROR VECTOR MAGNITUDE (% ms) EVM, ERROR VECTOR MAGNITUDE (% ms) 5 Figure 20. EVM and Drain Efficiency versus Output Power VDD = 28 Vdc, IDQ = 700 mA f = 943 MHz, EDGE Modulation −52.5 Pout = 70 W Avg. SR @ 400 kHz −60 60 W Avg. 20 W Avg. −67.5 70 W Avg. SR @ 600 kHz 60 W Avg. −75 20 W Avg. −82.5 900 910 920 930 940 950 f, FREQUENCY (MHz) 960 970 980 Figure 21. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −53 VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation −51 −54 SPECTRAL REGROWTH @ 600 kHz (dBc) SPECTRAL REGROWTH @ 400 kHz (dBc) −45 −48 TC = 25_C −57 −60 −63 −66 −69 −72 VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation −56 −59 −62 −65 TC = 25_C −68 −71 −74 −77 −80 −83 −75 0 22.5 45 67.5 90 112.5 Pout, OUTPUT POWER (WATTS) Figure 22. Spectral Regrowth at 400 kHz versus Output Power 135 0 22.5 45 67.5 90 112.5 135 Pout, OUTPUT POWER (WATTS) Figure 23. Spectral Regrowth at 600 kHz versus Output Power MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 13 EDGE CHARACTERIZATION TEST SIGNAL −10 −20 Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz −30 −40 (dB) −50 −60 −70 −80 400 kHz 400 kHz 600 kHz 600 kHz −90 −100 −110 Center 943 MHz 200 kHz Span 2 MHz Figure 24. EDGE Spectrum MRF6S9125NR1 MRF6S9125NBR1 14 RF Device Data Freescale Semiconductor f = 980 MHz Zload f = 900 MHz Zo = 5 Ω f = 980 MHz Zsource f = 900 MHz VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg. f MHz Zsource W Zload W 900 1.04 - j2.65 1.66 - j0.56 905 1.04 - j2.60 1.66 - j0.50 910 1.03 - j2.55 1.67 - j0.43 915 1.02 - j2.51 1.68 - j0.37 920 1.01 - j2.46 1.68 - j0.31 925 1.01 - j2.41 1.69 - j0.24 930 1.00 - j2.36 1.70 - j0.18 935 0.98 - j2.32 1.70 - j0.12 940 0.97 - j2.27 1.71 - j0.05 945 0.96 - j2.22 1.72 - j0.00 950 0.95 - j2.17 1.73 + j0.07 955 0.94 - j2.12 1.74 + j0.14 960 0.94 - j2.08 1.76 + j0.20 965 0.93 - j2.03 1.77 + j0.26 970 0.93 - j1.99 1.79 + j0.32 975 0.92 - j1.94 1.80 + j0.39 980 0.92 - j1.90 1.82 + j0.45 Output Matching Network Device Under Test Input Matching Network Z source Z load Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 25. Series Equivalent Source and Load Impedance for EDGE Characterization Tests MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S9125NR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF6S9125NR1 MRF6S9125NBR1 16 RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 17 MRF6S9125NR1 MRF6S9125NBR1 18 RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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