HITACHI HSB276AYP

HSB276AYP
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-1051 (Z)
Rev.0
Jan. 2001
Features
• High forward current, Low capacitance.
• CMPAK - 4 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSB276AYP
E9
CMPAK- 4
Outline
4
3
4
3
E9
1
(Top View)
2
1
2
(Top View)
1. Anode
2. Anode
3. Cathode
4. Cathode
HSB276AYP
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage VRRM
5
V
Rreverse voltage
VR
3
V
Average rectified current
I O*
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note: Per one device
Electrical Characteristics (Ta = 25°C) *2
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
3


V
I R = 1 mA
Reverse current
IR


50
µA
VR = 0.5 V
Forward current
IF
35


mA
VF = 0.5 V
Capacitance
C


0.85
pF
VR = 0.5 V, f = 1 MHz
∆C


0.10
pF
VR = 0.5 V, f = 1 MHz

30


V
C = 200 pF , R = 0 Ω
Both forward and reverse direction 1
pulse.
Capacitance deviation
1
ESD-Capability *
Notes: 1. Failure criterion ; IR > 100 µA at VR = 0.5 V
2. Per one device
2
HSB276AYP
10−1
10−2
10−2
10−3
10−3
10−4
Ta = 75°C
Ta = 25°C
10−4
10−5
Reverse current IR (A)
Forward current IF (A)
Main Characteristic
0
0.2
0.4
Ta = 75°C
10−5
0.6
0.8
1.0
Forward voltage VF (V)
10−6
Ta = 25°C
0
1.0
2.0
3.0
4.0
5.0
Reverse voltage VR (V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
f = 1MHz
Capacitance C (pF)
10
1.0
0.1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
3
HSB276AYP
Package Dimensions
Unit: mm
(0.65) (0.65)
0.3 ± 0.05
0.3 ± 0.05
0.3 ± 0.05
0 − 0.1
0.9 ± 0.1
(0.2)
(0.65) (0.65)
1.3 ± 0.2
+ 0.1
0.16− 0.06
2.1 ± 0.2
0.3 ± 0.05
(0.425) 1.25 ± 0.1
1.3 ± 0.2
(0.425)
2.0 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
CMPAK-4(D)

Conforms
0.006 g
HSB276AYP
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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