HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-838(Z) Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB276AS E8 CMPAK Outline 3 2 (Top View) 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSB276AS Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V 30 mA *1 Average rectified current IO Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Note 1. Per one device Electrical Characteristics (Ta = 25°C) *2 Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 — — V I R = 1 mA Reverse current IR — — 50 µA VR = 0.5V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5V, f = 1 MHz ∆C — — 0.10 pF VR = 0.5V, f = 1 MHz — 30 — — V C = 200pF , R = 0Ω Capacitance deviation *1 ESD-Capability Both forward and reverse direction 1 pulse. Note Note 2 1. Failure criterion ; IR ≥ 100µA at V R =0.5 V 2. Per one device HSB276AS Main Characteristic -2 -1 10 -2 Reverse current I R (A) Forward current IF (A) 10 10 -3 10 Ta= 75°C Ta= 25°C -4 10 -3 10 -4 10 Ta= 75°C -5 10 Ta= 25°C -5 -6 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.0 2.0 3.0 4.0 5.0 Reverse voltage V R (V) Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 0.1 0.1 1.0 Reverse voltage V R (V) 10 Fig.3 Capacitance Vs. Reverse voltage 3 HSB276AS Package Dimensions 0.1 0.3 +– 0.05 (0.65) (0.65) 0.2 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 + 0.1 0.16 – 0.06 0 – 0.1 0.425 1.25 ± 0.1 0.1 0.3 +– 0.05 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit: mm Hitachi Code JEDEC EIAJ Mass 4 CMPAK — Conforms 0.006 g HSB276AS Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. 5