SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ (nominal) beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM_071.ds4 40 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8506 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Storage Temperature Range Operating Temperature Range Soldering Temperature (5 sec) 50 mA 100 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 41 SEP8506 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_030.ds4 Normalized radiant intensity Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 Radiant Intensity vs Forward Current 5.0 TA = 25 °C 2.0 1.0 0.5 0.2 0.1 10 +15 +30 +45 +60 20 Fig. 4 Forward Voltage vs Forward Current gra_003.ds4 1.40 Forward voltage - V Forward voltage - V 1.30 1.25 1.20 1.15 1.10 Forward Voltage vs Temperature gra_207.ds4 1.35 1.30 1.25 1.20 1.15 IF = 20 mA 1.10 1.00 0 20 40 60 -40 -15 Forward current - mA Fig. 6 Spectral Bandwidth 35 60 85 Coupling Characteristics with SDP8406 gra_031.ds4 10 Light current - mA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 10 Temperature - °C gra_005.ds4 Relative intensity 100 1.05 1.05 890 910 930 950 970 990 1010 6 4 2 1.0 0.6 0.4 IF = 20 mA VCE = 5V TA = 25 °C 0.2 0.1 0.01 Wavelength - nm 42 40 50 1.40 1.35 Fig. 5 30 Forward current - mA Angular displacement - degrees Fig. 3 gra_028.ds4 10.0 0.02 0.05 0.1 0.2 0.5 1.0 Lens-to-lens separation - inches h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8506 GaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 Relative power output 10 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA - Free-air temperature - (°C) All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 43