MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 10W (TYP.) @ f=5.2 - 5.8 GHz High power gain GLP = 10 dB (TYP.) @ f=5.2 - 5.8GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=5.2 - 5.8GHz 15.8 8.0+/-0.2 (2) 2MIN 17.4+/-0.3 R1.2 (3) 20.4+/-0.2 item 01 : 5.2 - 5.8 GHz band power amplifier 13.4 4.0+/-0.4 0.1 item 51 : 5.2 - 5.8 GHz band digital radio communication QUALITY GRADE 1.4 IG 2.4+/-0.2 APPLICATION RECOMMENDED BIAS CONDITIONS (1): GATE (2): SOURCE (FLANGE) (3): DRAIN GF-18 VDS = 10 (V) ID = 2.4 (A) RG=50 (ohm) ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter Ratings Unit VGDO making semiconductor products better and more reliable, Gate to drain voltage -15 V VGSO but there is always the possibility that trouble may occur Gate to source voltage -15 V with them. Trouble with semiconductors may lead to personal Drain current 7.5 A injury, fire or property damage. Remember to give due IGR Reverse gate current -20 mA consideration to safety when making your circuit designs, IGF Forward gate current 42 mA with appropriate measures such as (1)placement of PT Total power dissipation 42.8 W Tch Channel temperature 175 deg.C Tstg Storage temperature -65 / +175 deg.C ID *1 substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. Rth(ch-c) Parameter (Ta=25deg.C) Test conditions Limits Typ. 4.5 Max. 6 Unit A Saturated drain current VDS = 3V , VGS = 0V Min. - Transconductance VDS = 3V , ID = 2.2A - 2 - S Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain VDS = 3V , ID = 40mA -2 -3 -4 V 39.5 40.5 - dBm dB 8 10 - Drain current - 2.4 - A Power added efficiency - 32 - % - - 3.5 deg.C/W Thermal resistance *1 VDS=10V, ID(RF off)=2.4A, f=5.2 - 5.8GHz delta Vf method *1 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004