MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC ................................................................... 400A ● VCES ....................................................... 3300V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 73±0.5 2 - M8 NUTS (2) C 17±0.1 57±0.25 29.7 140±0.5 44±0.3 124±0.25 2 (1) E 1 36 E G CIRCUIT DIAGRAM 4 - φ 7 MOUNTING HOLES 12.9±0.3 41±0.5 screwing depth min. 16.5 22±0.3 17.4±0.3 2.8 LABEL TAB # 110, T = 0.5 40.4±0.5 48 +1.0 0 5±0.15 36.2 5.8 16.2±0.3 screwing depth min. 4 C C 5 21.6±0.3 G E HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Collector-emitter voltage Gate-emitter voltage Qpd Partial discharge tpsc Maximum short circuit pulse width Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 90°C Pulse (Note 1) Pulse TC = 25°C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. V1 = 6900Vrms, V2 = 5100Vrms f = 60Hz (acc. to IEC 1287) VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C Ratings Unit 3300 ±20 400 800 400 800 4100 –40 ~ +150 –40 ~ +125 –40 ~ +125 10200 V V A A A A W °C °C °C V 10 pC 10 µs ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy Conditions Limits Typ — VCE = VCES, VGE = 0V, Tj = 25°C IC = 40mA, VCE = 10V, Tj = 25°C 5.0 6.0 7.0 V VGE = VGES, VCE = 0V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 125°C — — — — — — — — — — — — — — — — — — — 3.30 3.60 60 6.0 5.4 2.8 2.80 2.70 — — 0.64 — — 0.52 — 270 0.30 0.5 4.20 — — — — — 3.60 — 1.60 1.00 — 2.50 1.00 — 1.40 — — µA (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 400A, VGE = 15V, Tj = 25°C IE = 400A, VGE = 0V, Tj = 25°C (Note 4) IE = 400A, VGE = 0V, Tj = 125°C (Note 4) VCC = 1650V, IC = 400A, VGE = ±15V RG(on) = 5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = ±15V RG(off) = 5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = ±15V RG(on) = 5Ω, Tj = 125°C, Ls = 100nH Inductive load Max 5 Unit Min — mA V nF nF nF µC V µs µs J/pulse µs µs J/pulse µs µC J/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 18.0 Max 30.0 60.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mounting torque M — CTI da ds Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Mass Comparative tracking index Clearance distance in air Creepage distance along surface Min 7.0 3.0 1.0 — 600 26.0 56.0 Limits Typ — — — 0.52 — — — Max 15.0 6.0 3.0 — — — — Unit N·m kg — mm mm HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 800 800 VCE = 20V Tj = 125°C 700 VGE = 20V 600 VGE = 15V VGE = 12V 500 400 VGE = 10V 300 200 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 700 600 500 400 300 200 VGE = 8V 100 0 1 2 3 4 5 0 6 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 12 6 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 100 5 4 3 2 1 5 4 3 2 1 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0 0 200 400 600 800 COLLECTOR CURRENT (A) 0 0 200 400 600 800 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25°C f = 100kHz 7 5 VCC = 1650V, IC = 400A Tj = 25°C GATE-EMITTER VOLTAGE (V) 3 CAPACITANCE (nF) 2 102 Cies 7 5 3 2 101 7 5 Coes 16 12 8 4 3 2 Cres 100 -1 10 1.4 2 3 5 7 101 2 3 0 5 7 102 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°C, Inductive load VCC = 1650V, IC = 400A VGE = ±15V Tj = 125°C, Inductive load 2.5 Eon 1 Eoff 0.8 0.6 Erec 0.4 SWITCHING ENERGIES (J/pulse) 1.2 SWITCHING ENERGIES (J/pulse) 2 3 5 7 100 Eon 2 1.5 1 Eoff 0.5 0.2 Erec 0 0 200 400 600 800 COLLECTOR CURRENT (A) 0 0 10 20 30 40 50 GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 7 5 102 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°C, Inductive load 7 5 REVERSE RECOVERY TIME (µs) 3 SWITCHING TIMES (µs) 2 101 7 5 td(off) 3 2 td(on) 100 7 5 tr 3 tf 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 COLLECTOR CURRENT (A) 104 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°C, Inductive load 7 5 3 3 2 2 101 103 lrr 7 5 7 5 3 3 2 2 100 102 trr 7 5 7 5 3 3 2 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 HIGH POWER SWITCHING USE INSULATED TYPE 101 2 3 5 7 104 EMITTER CURRENT (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 1.0 Single Pulse, TC = 25°C Rth(j–c)Q = 30K/kW Rth(j–c)R = 60K/kW 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1200 1200 REVERSE RECOVERY CURRENT (A) VCC ≤ 2200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 5Ω COLLECTOR CURRENT (A) 1000 800 600 400 200 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) VCC ≤ 2200V, di/dt ≤ 2200A/µs Tj = 125°C 1000 800 600 400 200 0 0 1000 2000 3000 4000 EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005