MITSUBISHI CM400HG-66H

MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400HG-66H
● IC ................................................................... 400A
● VCES ....................................................... 3300V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
73±0.5
2 - M8 NUTS
(2) C
17±0.1
57±0.25
29.7
140±0.5
44±0.3
124±0.25
2
(1) E
1
36
E G
CIRCUIT DIAGRAM
4 - φ 7 MOUNTING HOLES
12.9±0.3
41±0.5
screwing depth
min. 16.5
22±0.3
17.4±0.3
2.8
LABEL
TAB # 110, T = 0.5
40.4±0.5
48 +1.0
0
5±0.15
36.2
5.8
16.2±0.3
screwing depth
min. 4
C
C
5
21.6±0.3
G
E
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
VCES
VGES
IC
ICM
IE (Note 2)
IEM(Note 2)
PC (Note 3)
Tj
Top
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Qpd
Partial discharge
tpsc
Maximum short circuit pulse
width
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Conditions
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 90°C
Pulse
(Note 1)
Pulse
TC = 25°C, IGBT part
(Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min.
V1 = 6900Vrms, V2 = 5100Vrms
f = 60Hz (acc. to IEC 1287)
VCC = 2200V, VCES ≤ 3300V, VGE = 15V
Tj = 125°C
Ratings
Unit
3300
±20
400
800
400
800
4100
–40 ~ +150
–40 ~ +125
–40 ~ +125
10200
V
V
A
A
A
A
W
°C
°C
°C
V
10
pC
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
Qg
Item
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
V EC(Note 2) Emitter-collector voltage
td(on)
tr
Eon
td(off)
tf
Eoff
trr (Note 2)
Qrr (Note 2)
Erec (Note 2)
Note 1.
2.
3.
4.
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Conditions
Limits
Typ
—
VCE = VCES, VGE = 0V, Tj = 25°C
IC = 40mA, VCE = 10V, Tj = 25°C
5.0
6.0
7.0
V
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 400A, VGE = 15V, Tj = 25°C
IC = 400A, VGE = 15V, Tj = 125°C
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.30
3.60
60
6.0
5.4
2.8
2.80
2.70
—
—
0.64
—
—
0.52
—
270
0.30
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.40
—
—
µA
(Note 4)
(Note 4)
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
VCC = 1650V, IC = 400A, VGE = 15V, Tj = 25°C
IE = 400A, VGE = 0V, Tj = 25°C
(Note 4)
IE = 400A, VGE = 0V, Tj = 125°C
(Note 4)
VCC = 1650V, IC = 400A, VGE = ±15V
RG(on) = 5Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 400A, VGE = ±15V
RG(off) = 5Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 400A, VGE = ±15V
RG(on) = 5Ω, Tj = 125°C, Ls = 100nH
Inductive load
Max
5
Unit
Min
—
mA
V
nF
nF
nF
µC
V
µs
µs
J/pulse
µs
µs
J/pulse
µs
µC
J/pulse
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
Min
—
—
—
Limits
Typ
—
—
18.0
Max
30.0
60.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mounting torque
M
—
CTI
da
ds
Item
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Min
7.0
3.0
1.0
—
600
26.0
56.0
Limits
Typ
—
—
—
0.52
—
—
—
Max
15.0
6.0
3.0
—
—
—
—
Unit
N·m
kg
—
mm
mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
800
VCE = 20V
Tj = 125°C
700
VGE = 20V
600
VGE = 15V
VGE = 12V
500
400
VGE = 10V
300
200
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
700
600
500
400
300
200
VGE = 8V
100
0
1
2
3
4
5
0
6
Tj = 25°C
Tj = 125°C
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
12
6
VGE = 15V
EMITTER-COLLECTOR VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0
100
5
4
3
2
1
5
4
3
2
1
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
COLLECTOR CURRENT (A)
0
0
200
400
600
800
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
103
20
VGE = 0V, Tj = 25°C
f = 100kHz
7
5
VCC = 1650V, IC = 400A
Tj = 25°C
GATE-EMITTER VOLTAGE (V)
3
CAPACITANCE (nF)
2
102
Cies
7
5
3
2
101
7
5
Coes
16
12
8
4
3
2
Cres
100 -1
10
1.4
2 3
5 7 101
2 3
0
5 7 102
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 5Ω
Tj = 125°C, Inductive load
VCC = 1650V, IC = 400A
VGE = ±15V
Tj = 125°C, Inductive load
2.5
Eon
1
Eoff
0.8
0.6
Erec
0.4
SWITCHING ENERGIES (J/pulse)
1.2
SWITCHING ENERGIES (J/pulse)
2 3
5 7 100
Eon
2
1.5
1
Eoff
0.5
0.2
Erec
0
0
200
400
600
800
COLLECTOR CURRENT (A)
0
0
10
20
30
40
50
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
7
5
102
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 5Ω
Tj = 125°C, Inductive load
7
5
REVERSE RECOVERY TIME (µs)
3
SWITCHING TIMES (µs)
2
101
7
5
td(off)
3
2
td(on)
100
7
5
tr
3
tf
2
10-1 1
10
2 3
5 7 102
2 3
5 7 103
2 3
5 7 104
COLLECTOR CURRENT (A)
104
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 5Ω
Tj = 125°C, Inductive load
7
5
3
3
2
2
101
103
lrr
7
5
7
5
3
3
2
2
100
102
trr
7
5
7
5
3
3
2
2
10-1 1
10
2 3
5 7 102
2 3
5 7 103
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
102
HIGH POWER SWITCHING USE
INSULATED TYPE
101
2 3
5 7 104
EMITTER CURRENT (A)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
1.0
Single Pulse, TC = 25°C
Rth(j–c)Q = 30K/kW
Rth(j–c)R = 60K/kW
0.8
0.6
0.4
0.2
0 -3
10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
1200
1200
REVERSE RECOVERY CURRENT (A)
VCC ≤ 2200V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 5Ω
COLLECTOR CURRENT (A)
1000
800
600
400
200
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
VCC ≤ 2200V, di/dt ≤ 2200A/µs
Tj = 125°C
1000
800
600
400
200
0
0
1000
2000
3000
4000
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005