MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN transistors connected to from seven high current gain driver pairs. PIN CONFIGURATION FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● With clamping diodes ● 3V micro computer series compatible input ● Wide operating temperature range (Ta = –40 to +85°C) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. INPUT IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 8 9 COM OUTPUT COMMON 16P2S-A(GP) 16P2Z-A(KP) Package type CIRCUIT DIAGRAM COM FUNCTION The M63824GP/KP is transistor-array of high active level seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin (pin9). All emitters of the output transistor are connected to GND (pin8). The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. OUTPUT 1.05K INPUT 7.2K 3K GND The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings –0.5 ~ +50 500 –0.5 ~ +10 500 50 0.80(GP)/0.6(KP) –40 ~ +85 –55 ~ +125 Unit V mA V mA V W °C °C Feb.2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol Parameter VO Output voltage IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) VIH VIL Duty Cycle GP : no more than 4% KP : no more than 3% Parameter V (BR) CEO Collector-emitter breakdown voltage ton 0 — 400 Unit V 0 — 200 2.4 — — 10 V 0.4 V Limits Test conditions min 50 — — — — — — 1000 ICEO = 100µA II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA II = 250µA, IC = 100mA Input current VI = 3V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 2V, IC = 350mA SWITCHING CHARACTERISTICS typ — 1.2 1.0 0.9 1.5 1.4 — 2500 Unit max — 1.6 1.3 1.1 2.4 2.0 100 — V V mA V µA — (Unless otherwise noted, Ta = 25°C) Parameter Limits Test conditions Turn-on time Turn-off time toff max 50 (Unless otherwise noted, Ta = 25°C) Symbol Symbol typ — 0 ELECTRICAL CHARACTERISTICS II VF IR hFE min 0 mA Duty Cycle GP : no more than 15% KP : no more than 12% IC ≤ 400mA “H” input voltage “L” input voltage VCE(sat) Limits Conditions CL = 15pF (note 1) min — typ 15 max — — 350 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0 ~ 3V (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Feb.2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Clamping Diode Characteristics Thermal Derating Factor Characteristics 500 Forward bias current IF (mA) Power dissipation Pd (W) 1.0 M63824GP 0.8 M63824KP 0.6 0.416 0.4 0.312 0.2 0 0 25 50 75 85 Ta=85°C 0 Ta=–40°C 1.0 0.5 1.5 2.0 Forward bias voltage VF (V) Duty Cycle-Collector Characteristics (M63824GP) Duty Cycle-Collector Characteristics (M63824GP) 300 2 200 •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 80 3 4 5 6 7 300 1 200 2 3 4 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 0 100 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63824KP) Duty Cycle-Collector Characteristics (M63824KP) 500 1 300 2 200 •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 0 400 Duty cycle (%) 400 100 Collector current Ic (mA) 1 20 40 60 Duty cycle (%) 80 3 4 5 6 7 100 Collector current Ic (mA) Collector current Ic (mA) Ta=25°C 100 500 500 Collector current Ic (mA) 200 Ambient temperature Ta (°C) 400 0 300 0 100 500 0 400 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously -operated circuit. •Ta = 85°C 400 300 1 200 2 34 56 7 100 0 0 20 40 60 80 100 Duty cycle (%) Feb.2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Output Saturation Voltage-Collector Current Characteristics 100 Output Saturation Voltage-Collector Current Characteristics 500 II=500µA 80 Collector current Ic (mA) Collector current Ic (mA) II=500µA 60 Ta=–40°C 40 Ta=25°C Ta=85°C 20 0 0 0.2 0.4 0.6 0.8 400 300 200 Ta=25°C 100 0 1.0 Ta=85°C 0 DC Amplification Factor Collector Current Characteristics 1.6 Grounded Emitter Transfer Characteristics VCE=2V Ta=85°C Collector current Ic (mA) DC amplification factor hFE 1.2 500 VCE=2V 7 5 0.8 0.4 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) 104 Ta=–40°C 3 2 103 7 5 Ta=–40°C Ta=25°C 3 2 400 300 200 Ta=85°C Ta=25°C 100 Ta=–40°C 102 101 2 3 5 7 102 2 5 7 103 3 0 0 0.4 0.8 1.2 1.6 2.0 Input voltage VI (V) Collector current IC (mA) Input Characteristics 4 Input current II (mA) Ta=25°C 3 Ta=–40°C 2 Ta=85°C 1 0 0 1 2 3 4 5 Input voltage VI (V) Feb.2003