MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE DESCRIPTION M54534P and M54534FP are six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) STROBE INPUT STB→ 1 VCC 15 →O1 IN2→ 3 14 →O2 IN3→ 4 13 →O3 IN4→ 5 12 →O4 IN5→ 6 11 →O5 IN6→ 7 10 →O6 GND 9 INPUT FEATURES ● Medium breakdown voltage (BV CEO ≥ 20V) ● High-current driving (Ic(max) =320mA) ● With clamping diodes ● Wide input voltage range (VI = –25 to +20V) ● Wide operating temperature range (Ta = –20 to +75°C) ● With strobe input 16 IN1→ 2 8 OUTPUT COM COMMON 16P4(P) Outline 16P2N-A(FP) CIRCUIT SCHEMATIC (EACH CIRCUIT) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps). 380 VCC COM 1.6k INPUT OUTPUT 20k FUNCTION The M54534P and M54534FP each have six circuits consisting of NPN transistors. Each input has a diode and 1.6kΩ esistor in series. Each input is connected, and each output is connected spike-killer clamping diode, emitters of each transistor is connected to GND (pin 8), strobe input is connected to (pin 1), clamping diode is connected COM pin (pin 9) and V CC is connected to the pin 16 in common. The collector current is 320mA maximum. Collector-emitter supply voltage is 20V maximum. M54534FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol GND STB STROBE INPUT The six circuits share the STB, COM, VCC, GND. The diodes shown by broken line are parasite diodes and must not be use. Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Parameter Conditions VCC VCEO Supply voltage Collector-emitter voltage Output, H IC VI Collector current Current per circuit output, L V(STB) IF VR Pd Input voltage Strobe input voltage Clamping diode forward current Clamping diode reverse voltage Topr Power dissipation Operating temperature Tstg Storage temperature 2k Ta = 25°C, when mounted on board Ratings Unit 10 –0.5 ~ +20 V V 320 –25 ~ +20 mA V –0.5~ +20 320 V mA 20 1.47/1.00 W –20 ~ +75 °C –55 ~ +125 °C V Aug.1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE FUNCTIONAL TABLE IN L H L H STB L L H H OUT H H H L RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter min Limits typ max Unit VCC Supply voltage 3 — 8 V VO Output voltage 0 — 20 V 0 — 300 0 — 150 3.2 0 2.4 0 — — — — 0.7 18 IC Collector current Per channel VCC = 6.5V, Duty Cycle P : no more than 25% FP : no more than 15% VCC = 6.5V, Duty Cycle P : no more than 65% FP : no more than 35% VIH “H” Input voltage VIL “L” Input voltage “H” Input voltage (strobe input) VIH(STB) VIL(STB) “L” Input voltage (strobe input) ELECTRICAL CHARACTERISTICS Parameter V (BR) CEO Collector-emitter breakdown voltage V V Test conditions min 20 Limits typ+ — max — — — 0.3 0.15 0.85 0.5 Unit V V — 0.5 1.4 — — — –7.9 –20 –20 mA µA mA IF = 320mA — — — 1.4 20 2.4 µA V Supply current VR = 20V VCC = 8V, VI = 3.2V (all input), VI(STB) = 2.4V — — — 120 100 200 µA mA DC amplification factor VCE = 4V, VCC = 6.5V, IC = 300mA, Ta = 25°C, VI(STB) = 2.4V 1000 3000 — — Input current Input reverse current Strobe input current IR(STB) VF Strobe input reverse current hFE 0.2 V V VCC = 8V, V I = 3.2V, VI(STB) = 0.2V, I CEO = 100µA VI = 3.2V VCC = 6.5V, IC = 250mA Collector-emitter saturation voltage VI(STB) = 2.4V VCC = 3V, I C = 120mA II IIR II(STB) IR ICC 18 (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol VCE (sat) mA Clamping diode forward voltage Clamping diode reverse current VCC = 8V, V I = 3.2V, VI(STB) = 2.4V VCC = 8V, V I = –25V VCC = 8V, VI = 3.2V (all input), VI(STB) = 0.2V VCC = 8V, VI = 0V, VI(STB) = 20V + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1) min Limits typ max Unit — 22 — ns — 1200 — ns Aug.1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE NOTE 1 TEST CIRCUIT TIMING DIAGRAM VCC INPUT VO Measured device 50% 50% INPUT RL OPEN OUTPUT PG STB OUTPUT 50Ω CL 50% 50% ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 3.2VP-P (2) Input-output conditions : RL = 40Ω, VO = 10V, VCC = VSTB = 6.5V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 400 M54534P 1.5 1.0 Collector current Ic (mA) Power dissipation Pd (W) 2.0 M54534FP 0.5 0 0 25 50 75 VI = 3.2V VCC = 3V VSTB = 2.4V 100 Ta = 75°C Ta = 25°C Ta = –20°C 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (°C) Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54534P) Duty-Cycle-Collector Characteristics (M54534P) 400 1~3 300 4 5 200 6 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C, VCC = 6.5V 100 0 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) Collector current Ic (mA) 200 0 100 400 0 300 1,2 300 3 200 4 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C, VCC = 6.5V 100 0 0 20 40 60 80 5 6 100 Duty cycle (%) Aug.1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE Duty-Cycle-Collector Characteristics (M54534FP) Duty-Cycle-Collector Characteristics (M54534FP) 400 1,2 300 3 4 200 5 100 0 6 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C, VCC = 6.5V 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 2 200 3 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C, VCC = 6.5V 100 0 100 1 300 0 20 40 Duty cycle (%) 6 100 Grounded Emitter Transfer Characteristics 104 400 VCC = 6.5V, VI(STB) = 2.4V VCE = 4V 7 5 3 103 7 5 VCC = 6.5V, VI(STB) = 2.4V VCE = 4V 3 Collector current Ic (mA) DC amplification factor hFE 80 Duty cycle (%) DC Amplification Factor Collector Current Characteristics Ta = 75°C Ta = 25°C Ta = –20°C 300 200 100 Ta = 75°C Ta = 25°C Ta = –20°C 102 1 10 3 5 7 102 3 0 5 7 103 0 1 Collector current Ic (mA) 3 4 Supply Current Characteristics (common) Input Characteristics 200 Supply current ICC (mA) VCC = 8V VSTB = 2.4V 8 Ta = 75°C Ta = 25°C Ta = –20°C 6 4 2 0 2 Input voltage VI (V) 10 Input current II (mA) 60 4 5 0 5 10 15 Input voltage VI (V) 20 VSTB = 2.4V VI = 3.2V Ta = 75°C Ta = 25°C Ta = –20°C 150 100 50 0 0 2 4 6 8 10 Supply voltage VCC (V) Aug.1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE Clamping Diode Characteristics Forward bias current IF (mA) 400 Ta = 75°C Ta = 25°C Ta = –20°C 300 200 100 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug.1999