MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) M54583P IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 GND 10 INPUT FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ● High-current driving (Ic(max) = 400mA) ● Active L-level input ● With input clamping diodes VCC Outline 18P4G M54583FP APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces NC INPUT FUNCTION The M54583 is produced by adding PNP transistors to M54523 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7kΩ and diode are provided in series between each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the VCC. Without this diode, the current flow from “H” input to the VCC and the “L” input circuits is activated, in such case where one of the inputs of the 8 circuits is “H” and the others are “L” to save power consumption. The diode is inserted to prevent such misoperation. This device is most suitable for a driver using NMOS IC output especially for the driver of current sink. Collector current is 400mA maximum. Collector-emitter supply voltage is 50V. The 54583FP is enclosed in a molded small flat package, enabling space saving design. 9 OUTPUT 1 20 NC IN1→ 2 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 12 →O8 GND 10 11 OUTPUT VCC Outline 20P2N-A NC : No connection CIRCUIT DIAGRAM (EACH CIRCUIT) VCC 7k INPUT 7k OUTPUT 2.7k 7.2k GND 3k The eight circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω May 2007 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO Parameter Supply voltage Collector-emitter voltage VI IC Pd Topr Tstg Input voltage Collector current Power dissipation Operating temperature (Unless otherwise noted, Ta = –20 ~ +75°C) Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board Storage temperature RECOMMENDED OPERATING CONDITIONS Symbol VCC min Limits typ 4 5 8 0 — 350 0 — 200 VCC–0.7 — 0 — Parameter VCC = 5V, Duty Cycle P : no more than 10% Collector current FP : no more than 5% Per channel VCC = 5V, Duty Cycle P : no more than 34% FP : no more than 15% “H” input voltage “L” input voltage VIH VIL ELECTRICAL CHARACTERISTICS Unit V V V 400 1.79/1.1 –20 ~ +75 mA W °C –55 ~ +125 °C (Unless otherwise noted, Ta = –20 ~ +75°C) Supply voltage IC Ratings 10 –0.5 ~ +50 –0.5 ~ VCC Unit max V mA VCC V V VCC–3.6 (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage Limits Test conditions min 50 — ICEO = 100µA, VCC = 8V VCE (sat) Collector-emitter saturation voltage VI = VCC–3.6V II Input current ICC Supply current (one circuit coming on) hFE DC amplification factor IC = 350mA IC = 200mA VI = VCC–3.6V VCC = 5V, VI = VCC–3.6V VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C — — — 2000 typ+ — 1.2 0.98 –320 1.9 3500 Unit max — 2.2 V V 1.6 –600 µA 3 mA — — + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS Symbol ton (Unless otherwise noted, Ta = 25°C) Parameter Turn-on time Turn-off time toff min CL = 15pF (note 1) typ max — 130 — — 3200 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VCC Measured device VO INPUT 50% 50% RL OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0.4 to 4V (2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes May 2007 2 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 2.0 Collector current Ic (mA) Power dissipation Pd (W) M54583P 1.5 M54583FP 1.0 0.5 0 0 25 50 75 Ta = 75°C Ta = 25°C Ta = –20°C 100 0 0.5 1.0 1.5 2.0 Duty-Cycle-Collector Characteristics (M54583P) Duty-Cycle-Collector Characteristics (M54583P) 500 1 2 300 3 200 4 5 6 7 8 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 25°C 100 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) VI = 1.4V VCC= 5V Output saturation voltage VCE (sat) (V) 1 400 300 2 3 4 5 76 8 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 75°C 100 0 100 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54583FP) Duty-Cycle-Collector Characteristics (M54583FP) 500 500 1 400 Collector current Ic (mA) Collector current Ic (mA) 200 Ambient temperature Ta (°C) 400 300 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 25°C 100 0 300 0 100 500 0 400 0 20 40 60 80 3 4 5 6 7 8 400 300 1 200 2 0 100 Duty cycle (%) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •Vcc =5.0V •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 100 0 20 40 60 80 3 4 100 5 6 7 8 Duty cycle (%) May 2007 3 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics Input Characteristics –1.0 DC amplification factor hFE 104 Input current II (mA) –0.8 VCC = 5V Ta = 75°C Ta = 25°C Ta = –20°C –0.6 –0.4 –0.2 0 0 1 2 3 4 7 5 3 103 7 5 VCC = 5V VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C 3 102 1 10 5 Supply voltage-Input voltage VCC–VI (V) Grounded Emitter Transfer Characteristics Supply Current Characteristics 5 VCC = 4V VCE = 4V VI = 0V Ta = 75°C Ta = 25°C Ta = –20°C 300 Supply current Icc (mA) Collector current Ic (mA) 5 7 103 3 Collector current Ic (mA) 400 200 100 0 5 7 102 3 0 1 2 3 3 2 1 0 4 Supply voltage-Input voltage VCC–VI (V) Ta = 75°C Ta = 25°C Ta = –20°C 4 0 2 4 6 8 10 Supply voltage VCC (V) May 2007 4