MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION NC 1 20 COM COMMON IN1 2 19 O1 IN2 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 IN7 8 13 O7 IN8 9 12 O8 GND 10 11 VCC INPUT FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● “L” active level input ● With input diode ● With clamping diodes ● Wide operating temperature range (Ta = –20 to +75°C) APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces OUTPUT NC : No connection 20P4(P) Package type 20P2N-A(FP) CIRCUIT DIAGRAM (EACH CIRCUIT) VCC 7K COM INPUT OUTPUT 7K FUNCTION The M54587 is produced by adding PNP transistors to M54585 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7kΩ and diode are provided in series between each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the VCC. Without this diode, the current flow from “H” input to the VCC and the “L” input circuits is activated, in such case where one of the inputs of the 8 circuits is “H” and the others are “L” to save power consumption. The diode is inserted to prevent such misoperation. This device is most suitable for a driver using NMOS IC output especially for the driver of current sink. Collector current is 500mA maximum. Collector-emitter supply voltage is 50V. The M54587FP is enclosed in a molded small flat package, enabling space saving design. 2.7K 7.2K 3K GND The eight circuits share the Vcc, COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Mar.2002 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO VI IC IF VR Pd Topr Tstg (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter Output, H Current per circuit output, L Collector current Clamping diode forward current Clamping diode reverse voltage Power dissipation Symbol IC VIH VIL V V mA mA V W °C °C (Unless otherwise noted, Ta = –20 ~ +75°C) min Limits typ 4 5 8 0 — 400 0 — 200 VCC–0.7 — 0 — Parameter Supply voltage VCC = 5V, Duty Cycle P : no more than 6% Collector current FP : no more than 5% Per channel VCC = 5V, Duty Cycle P : no more than 34% FP : no more than 15% “H” input voltage “L” input voltage ELECTRICAL CHARACTERISTICS Unit V 1.79/1.1 –20 ~ +75 –55 ~ +125 Ta = 25°C, when mounted on board Operating temperature Storage temperature RECOMMENDED OPERATING CONDITIONS VCC Ratings 10 –0.5 ~ +50 –0.5 ~ VCC 500 500 50 Conditions Supply voltage Collector-emitter voltage Input voltage max Unit V mA VCC VCC–3.6 V V (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol Parameter Test conditions V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA VCE(sat) Collector-emitter saturation voltage VI = VCC–3.6V II VF IR ICC hFE Input current Clamping diode forward volltage Clamping diode reverse current Supply current (AN only Input) DC amplification factor IC = 400mA IC = 200mA VI = VCC–3.6V IF = 400mA VR = 50V VCC = 5V, VI = VCC–3.5V VCC = 5V, VCE = 4V, IC = 350mA, Ta = 25°C Limits min 50 — — — — — — 2000 typ ✽ — 1.2 0.95 –290 1.4 0.1 1.9 3500 max — 2.4 1.6 –600 2.4 100 3 — Unit V V µA V µA mA — ✽ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS Symbol ton toff (Unless otherwise noted, Ta = 25°C) Parameter Turn-on time Turn-off time Test conditions CL = 15pF (note 1) Limits min typ max — — 120 2400 — — Unit ns ns Mar.2002 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO VCC INPUT 50% Measured device 50% RL OPEN OUTPUT PG OUTPUT 50Ω 50% CL 50% ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.4 ~ 4V (2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 4V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 Collector current Ic (mA) M54587P 1.5 M54587FP 1.0 0.5 0 0 25 50 75 Collector current Ic (mA) Ta = 75°C Ta = 25°C Ta = –20°C 100 0 0.5 1.0 1.5 2.0 Duty Cycle-Collector Characteristics (M54587P) Duty Cycle-Collector Characteristics (M54587P) 1 500 2 300 3 200 4 5 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 5V •Ta = 25°C 0 VI = 1.4V VCC = 5V 200 Output saturation voltage VCE(sat) (V) 400 0 300 Ambient temperature Ta (°C) 500 100 400 0 100 20 40 60 Duty cycle (%) 80 7 100 6 8 Collector current Ic (mA) Power dissipation Pd (W) 2.0 1 400 300 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 5V •Ta = 75°C 100 0 0 20 40 60 80 3 4 5 6 7 8 100 Duty cycle (%) Mar.2002 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M54587FP) Duty Cycle-Collector Characteristics (M54587FP) 500 1 400 300 2 3 4 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 5V •Ta = 25°C 100 0 0 20 40 60 80 5 6 7 8 Collector current Ic (mA) Collector current Ic (mA) 500 1 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 5V •Ta = 75°C 100 0 60 80 2 3 4 6 5 8 7 100 Output Current Characteristics DC Amplification Factor Collector Current Characteristics 104 VCC = 4V VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C 300 200 100 0 1 2 3 7 5 3 103 7 5 VCC = 5V VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C 3 102 1 10 4 Input voltage Vcc-VI (V) 3 5 7 102 5 7 103 3 Collector current IC (mA) Input Characteristics Driver Supply Characteristics –1.0 5 VCC = 5V VI = 0V Supply Current Icc (mA) Ta = 75°C Ta = 25°C Ta = –20°C –0.8 Input Current II (mA) 40 Duty cycle (%) 400 –0.6 –0.4 –0.2 0 20 Duty cycle (%) DC amplification factor hFE Collector current IC (mA) 300 0 100 500 0 400 0 1 2 3 4 IInput voltage Vcc-VI (V) 5 Ta = 75°C Ta = 25°C Ta = –20°C 4 3 2 1 0 0 2 4 6 8 10 Supply voltage Vcc (V) Mar.2002 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Clamping Diode Characteristics Forward bias current IF (mA) 500 Ta = 75°C Ta = 25°C Ta = –20°C 400 300 200 100 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Mar.2002