MITSUBISHI LASER DIODES ML9XX41 SERIES Notice: Some parametric limits are subject to change. TYPE NAME InGaAsP DFB-LASER DIODE WITH EA MODULATOR ML9SM41 DESCRIPTION FEATURES ML9XX41 series are DFB (Distributed Feedback) laser diodes with a • Dispersion penalty less than 2dB at 9.95328Gbps, +1600ps/nm monolithically integrated EA modulator, suitable light source for 10Gbps • High extinction ratio (Min. 10dB at 9.95328Gbps) application. ML9SM41 is supplied with the chip-on-carrier type package. • High - side mode suppression ratio (Typ. 40dB) • High speed response (Typ. 30psec) APPLICATION 10Gbps transmission system ABSOLUTE MAXIMUM RATINGS Symbol IF VRL VEA Tc Tstg Parameter Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Modulator) Case temperature Storage temperature Conditions CW - Ratings 150 2 -3 +25 to +40 -40 to +100 Unit mA V V degC degC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=35degC) Symbol Ith Iop Vop λp θ// θ⊥ Pm fc tr,tf SMSR Ex Pp Parameter Threshold current Operation current Operating voltage Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output power Cut off frequency Rise and fall time (20%-80%) Side mode suppression ratio Extinction ratio Dispersion penalty Test Conditions CW, Vmod=0V CW, Po=6.5mW, Vmod=0V CW, Po=6.5mW, Vmod=0V CW, If=Iop, Vmod=0V CW, Po=6.5mW, Vmod=0V Min. ------1530 --- Typ. 15 85 1.6 --30 Max. 30 100 1.8 1565 --- Unit mA mA V nm deg. CW, Po=6.5mW, Vmod=0V --- 42 --- deg. CW, Po=6.5mW, Vmod=0V CW, If=Iop, Vmod=-1V 9.95328Gbps, NRZ, PRBS 223-1 If=Iop, Vpp=2V, Voffset=0 to -1.0V ditto +1600ps/nm @BER=10-10 --10 --35 10 2.0 14 --40 --- ----30 ----- mW GHz psec dB dB --- --- 2.0 dB MITSUBISHI ELECTRIC Mar. 2006 MITSUBISHI LASER DIODES ML9XX41 SERIES Notice: Some parametric limits are subject to change. InGaAsP DFB-LASER DIODE WITH EA MODULATOR OUTLINE DRAWINGS (3) (2) 0.38±0.05 0.1 ~ 0.3 Beam Point 1.08 (1) 0.1 EAM (3) (3) 0.75 LD Front (0.225) ML9SM41 ML9SM41 (2) 0.15 (1) Case 0.6 0.15 Rear MITSUBISHI ELECTRIC *) The LD and EAM cathode is contacted with the back side of the carrier. Mar. 2006