MITSUBISHI LASER DIODES ML9XX40 SERIES 2.5Gbps InGaAsP DFB LASER DIODE Notice : Some parametric limits are subject to change TYPE NAME ML925B40F / ML920J40S ML925J40F / ML920L40S DESCRIPTION APPLICATION ML9XX40 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm. λ/4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML9xx40 can operate in the wide temperature range from 0oC to 85 oC without any temperature control. They are well suited for light source in long distance digital transmission application of coarse WDM. · 2.5Gbps long-haul transmission · Coarse WDM application FEATURES · λ/4 shifted grating structure · Wide temperature range operation (0oC to 85oC) · High side-mode-suppression-ratio (typical 45dB) · High resonance frequency (typical 11GHz) ABSOLUTE MAXIMUM RATINGS Symbol Po If VRL IFD VRD Tc Tstg Parameter Output power Forward current (Laser diode) Reverse voltage (Laser diode) Forward current (Photo diode) Reverse voltage (Photo diode) Conditions CW --------- Ratings 6 150 2 2 20 Unit mW mA V mA V Case temperature --- 0 to +85 ºC Storage temperature --- -40 to +100 ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC) Symbol Ith Parameter Threshold current Iop Operation current Vop Operating voltage η Slope efficiency λp θ // Peak wavelength Side mode suppression ratio Side mode suppression ratio(RF) Beam divergence angle (parallel) <*6> θ┴ (perpendicular) <*6> SMSR fr tr,tf Resonance frequency Rise and Fall time <*7> Test conditions CW CW <*1> Tc=85ºC <*2> CW, Po=5mW CW, Po=5mW <*1> Tc=85ºC <*2> CW, Po=5mW CW, Po=5mW CW, Po=5mW <*3> CW, Po=5mW CW, Po=5mW, Tc=0 to 85ºC 2.48832Gbps,Ib=Ith, Ipp=40mA CW, Po=5mW Min. Typ. Max. Unit --10 15 mA --35 40 --45 50 --35 45 mA --70 80 --90 100 --1.1 1.5 V 0.17 0.22 --mW/mA 0.15 0.20 --<*4>,<*5> nm 35 45 --dB --45 ----25 --deg. CW, Po=5mW --- 30 --- deg. 2.48832Gbps,Ib=Ith, Ipp=40mA --- 11 --- GHz --- 80 120 ps 0.1 ----- ----10 1.0 0.1 20 mA µA pF 2.48832Gbps,Ib=Ith, Ipp=40mA 20%-80% CW, Po=5mW,VRD=1V,RL=10Ω VRD=5V VRD=5V Monitoring output current (PD) Im Dark current (PD) Id Ct Capacitance (PD) <*1> Applied to ML9xx40-04~09 and -12~17. <*2> Applied to ML9xx40-10~11 and -18~19. <*3> Applied to ML925J40F and ML920L40S. <*6> Beam divergence is not applied to ML925J40F and ML920L40S. <*7> Except influence of the 18mm lead. MITSUBISHI ELECTRIC Feb. 2005 MITSUBISHI LASER DIODES ML9XX40 SERIES Notice : Some parametric limits are subject to change 2.5Gbps InGaAsP DFB LASER DIODE <*4> Peak Wavelength Type ML925B40F-01 / ML920J40S-01 ML925J40F-01 / ML920L40S-01 ML925B40F-04 / ML920J40S-04 ML925J40F-04 / ML920L40S-04 ML925B40F-05 / ML920J40S-05 ML925J40F-05 / ML920L40S-05 ML925B40F-06 / ML920J40S-06 ML925J40F-06 / ML920L40S-06 ML925B40F-07 / ML920J40S-07 ML925J40F-07 / ML920L40S-07 ML925B40F-08 / ML920J40S-08 ML925J40F-08 / ML920L40S-08 ML925B40F-09 / ML920J40S-09 ML925J40F-09 / ML920L40S-09 ML925B40F-10 / ML920J40S-10 ML925J40F-10 / ML920L40S-10 ML925B40F-11 / ML920J40S-11 ML925J40F-11 / ML920L40S-11 Symbol Test Condition CW, Po=5mW Tc= 0 to 85ºC λp CW, Po=5mW Tc= 25ºC Min. Limits Typ. Max. 1530 1550 1570 1467 1470 1473 1487 1490 1493 1507 1510 1513 1527 1530 1533 1547 1550 1553 1567 1570 1573 1587 1590 1593 1607 1610 1613 Min. Limits Typ. Max. 1468 1470 1472 1488 1490 1492 1508 1510 1512 1528 1530 1532 1548 1550 1552 1568 1570 1572 1588 1590 1592 1608 1610 1612 Unit nm <*5> Peak Wavelength Type ML925B40F-12 / ML920J40S-12 ML925J40F-12 / ML920L40S-12 ML925B40F-13 / ML920J40S-13 ML925J40F-13 / ML920L40S-13 ML925B40F-14 / ML920J40S-14 ML925J40F-14 / ML920L40S-14 ML925B40F-15 / ML920J40S-15 ML925J40F-15 / ML920L40S-15 ML925B40F-16 / ML920J40S-16 ML925J40F-16 / ML920L40S-16 ML925B40F-17 / ML920J40S-17 ML925J40F-17 / ML920L40S-17 ML925B40F-18 / ML920J40S-18 ML925J40F-18 / ML920L40S-18 ML925B40F-19 / ML920J40S-19 ML925J40F-19 / ML920L40S-19 Symbol λp Test Condition CW, Po=5mW Tc= 25ºC MITSUBISHI ELECTRIC Unit nm Feb. 2005 MITSUBISHI LASER DIODES ML9XX40 SERIES 2.5Gbps InGaAsP DFB LASER DIODE Notice : Some parametric limits are subject to change OUTLINE DRAWINGS Dimensions : mm ML925B40F ML920J40S +0 (3) φ5.6 -0.03 φ4.25 Case LD Ｙ (1) (0.25) (2) 2-90° (3) PD (4) Ｘ (2) (0.25) (1) (4) ML925B11F ML925B40F (3) φ3.55±0.1 (Glass) φ2.0Min. 2.1±0.15 Facet Reference Plane (1) (2) PD 1.2 Emitting (4) 18 ±1 ±0.1 Case LD φ1.0Min. 1.27 ±0.03 0.25 ±0.03 1±0.1 ML920J40S ML920J11S φ2.0 ±0.25 (P.C.D.) 4-φ0.45 ±0.05 (1) Pin Connection ( Top view ) (2) Dimensions : mm ML925J40F ML920L40S (3) +0 φ5.6 -0.03 Case LD φ4.3 Ｙ (1) (0.25) (2) Top View (3) (2) (4) Ｘ (0.25) 2-90° PD (1) (4) ML925J11F ML925J40F 1±0.1 (3) φ3.75±0.1 Ｚ Case 18 ±1 ±0.1 1.27 ±0.03 3.97 ±0.15 Emitting Facet Reference Plane 1.2 (7.51) LD (1) (2) PD (4) φ2.0±0.25 (P.C.D.) ML920L40S ML920L11S 4-φ0.45±0.05 (1) (2) MITSUBISHI ELECTRIC Pin Connection Pin Connection ((Top Topview) view ) Feb. 2005