MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collector −Base Voltage Value Vdc 30 40 VCBO VEBO MMBT2222LT1 MMBT2222ALT1 Collector Current − Continuous 2 EMITTER Vdc 60 75 MMBT2222LT1 MMBT2222ALT1 Emitter −Base Voltage 1 BASE Vdc 3 5.0 6.0 IC 600 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C SOT−23 CASE 318 STYLE 6 PD RqJA PD MARKING DIAGRAM Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. xxx M G G 1 xxx = 1P or M1B M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 6 1 Publication Order Number: MMBT2222LT1/D MMBT2222LT1, MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222A MMBT2222 V(BR)CEO 30 40 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222A MMBT2222 V(BR)CBO 60 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222A MMBT2222 V(BR)EBO 5.0 6.0 − − Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX − 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICBO − − − − 0.01 0.01 10 10 mAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO − 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL − 20 nAdc 35 50 75 35 100 50 30 40 − − − − 300 − − − MMBT2222 MMBT2222A − − 0.4 0.3 MMBT2222 MMBT2222A − − 1.6 1.0 MMBT2222 MMBT2222A − 0.6 1.3 1.2 MMBT2222 MMBT2222A − − 2.6 2.0 250 300 − − − 8.0 − − 30 25 2.0 0.25 8.0 1.25 − − 8.0 4.0 50 75 300 375 5.0 25 35 200 ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 3) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3) (IC = 500 mAdc, VCE = 10 Vdc) (Note 3) hFE MMBT2222A only MMBT2222 MMBT2222A Collector −Emitter Saturation Voltage (Note 3) (IC = 150 mAdc, IB = 15 mAdc) − VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (Note 3) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MMBT2222 MMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo MMBT2222 MMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A pF hie kW X 10− 4 hre hfe − mmhos hoe http://onsemi.com 2 MMBT2222LT1, MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − 150 − 4.0 Unit SMALL− SIGNAL CHARACTERISTICS Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A rb, Cc Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) MMBT2222A ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 ns ns 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 +16 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 0 0 −2 V 1 kW < 2 ns −14 V CS* < 10 pF 200 1k < 20 ns CS* < 10 pF 1N914 −4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 −55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain http://onsemi.com 3 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MMBT2222LT1, MMBT2222ALT1 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts − 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 Figure 5. Turn −On Time 300 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 6.0 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 6. Turn −Off Time 10 8.0 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 4.0 2.0 IC = 50 mA 100 mA 500 mA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 4 50 k 100 k 30 CAPACITANCE (pF) 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) MMBT2222LT1, MMBT2222ALT1 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 50 70 100 Figure 10. Current−Gain Bandwidth Product 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/° C) V, VOLTAGE (VOLTS) 0.8 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) −0.5 −1.0 −1.5 RqVB for VBE −2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) −2.5 500 1.0 k 0.1 0.2 Figure 11. “On” Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 12. Temperature Coefficients ORDERING INFORMATION Specific Marking Code Package Shipping † MMBT2222LT1 M1B SOT−23 3000 / Tape & Reel MMBT2222LT1G M1B SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT2222ALT1 1P SOT−23 3000 / Tape & Reel MMBT2222ALT1G 1P SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT2222LT3 M1B SOT−23 10,000 / Tape & Reel MMBT2222LT3G M1B SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBT2222ALT3 1P SOT−23 10,000 / Tape & Reel MMBT2222ALT3G 1P SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MMBT2222LT1, MMBT2222ALT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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