MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.2 VOLTS hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc SOT−223 Surface Mount Packaging Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb−Free Package is Available C 2,4 4 C E3 1 2 3 Top View Pinout B MAXIMUM RATINGS Rating Symbol Value Unit VCEO 30 Vdc Collector −Base Voltage VCB 45 Vdc Emitter −Base Voltage Collector −Emitter Voltage VEB ± 6.0 Vdc Base Current − Continuous IB 1.0 Adc Collector Current IC 3.0 5.0 Adc PD 3.0 24 1.7 W mW/°C W − Continuous − Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Operating and Storage Junction Temperature Range B1 Schematic 1 AYW 9410 G G SOT−223 (TO−261) CASE 318E STYLE 1 1 0.75 TJ, Tstg −55 to +150 A Y W 9410 G °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 42 °C/W Thermal Resistance, Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material RqJA 75 °C/W Thermal Resistance, Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material RqJA 165 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds E MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. = Assembly Location = Year = Work Week = Device Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping † MMJT9410 SOT−223 1000 / Tape & Reel MMJT9410G SOT−223 (Pb−Free) 1000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 6 1 Publication Order Number: MMJT9410/D MMJT9410 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 30 − − 6.0 − − − − − − 20 200 − − 10 − − − 0.105 0.150 − 0.150 0.200 0.450 − − 1.25 − − 1.10 85 80 60 200 − − − − − − 85 135 − 200 − − 72 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) VCEO(sus) Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125°C) ICER Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VBE(sat) Base−Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) VBE(on) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE Vdc Vdc Vdc − DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Cob Input Capacitance (VEB = 8.0 Vdc) Cib Current−Gain − Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz) fT pF pF MHz 1.0 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. fT = |hFE| • ftest 0.75 0.50 IC = 3.0 A 0.8 A 0.25 0 1.2 A 0.5 A 0.25 A 1.0 10 100 1000 0.25 0.20 0.15 1.2 A 0.10 0.8 A 0.5 A 0.05 IC = 0.25 A 0 1.0 10 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region http://onsemi.com 2 1000 MMJT9410 1000 150°C HFE , DC CURRENT GAIN HFE , DC CURRENT GAIN 1000 25°C 100 −55°C 150°C 25°C 100 −55°C VCE = 1.0 V VCE = 4.0 V 10 10 0.1 1.0 0.1 10 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. DC Current Gain 1.0 IC/IB = 10 VBE(sat) 1.0 V, VOLTAGE (V) V, VOLTAGE (V) 10 IC, COLLECTOR CURRENT (A) 10 VBE(sat) 0.1 0.1 VCE(sat) VCE(sat) IC/IB = 50 0.01 0.01 0.1 1.0 0.1 10 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “On” Voltages Figure 6. “On” Voltages 1.2 1000 CAPACITANCE (pF) −55°C V, VOLTAGE (V) 1.0 0.8 25°C 150°C 0.4 100 Cob 10 VCE = 4.0 V 0 1.0 0.1 1.0 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) VR, REVERSE VOLTAGE (VOLTS) Figure 7. VBE(on) Voltage Figure 8. Capacitance http://onsemi.com 3 100 10 100 IC , COLLECTOR CURRENT (AMPS) f t , CURRENT−GAIN BANDWIDTH PRODUCT MMJT9410 VCE = 10 V ftest = 1.0 MHz TA = 25°C 100 ms 0.1 0.01 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 0.001 10 0.1 1.0 0.1 10 1.0 10 100 IC, COLLECTOR CURRENT (AMP) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 9. Current−Gain Bandwidth Product Figure 10. Active Region Safe Operating Area 4.0 PD , POWER DISSIPATION (WATTS) 0.5 ms 5.0 ms 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150°C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 3.0 TC 2.0 1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 11. Power Derating r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 RqJA(t) = r(t) qJA qJA = 165°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) qJA(t) SINGLE PULSE 0.001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.0001 0.0001 0.001 0.01 0.1 1.0 t, TIME (seconds) Figure 12. Thermal Response http://onsemi.com 4 10 100 1000 MMJT9410 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 DIM A A1 b b1 c D E e e1 L1 HE 4 HE 1 2 E 3 b e1 e 0.08 (0003) q C q A A1 STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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