ONSEMI MMJT9410

MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
• Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
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• High DC Current Gain −
•
•
•
•
•
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
hFE = 85 (Min) @ IC = 0.8 Adc
= 60 (Min) @ IC = 3.0 Adc
Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.45 Vdc (Max) @ IC = 3.0 Adc
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
Pb−Free Package is Available
C 2,4
4
C
E3
1 2 3
Top View
Pinout
B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
Collector −Base Voltage
VCB
45
Vdc
Emitter −Base Voltage
Collector −Emitter Voltage
VEB
± 6.0
Vdc
Base Current − Continuous
IB
1.0
Adc
Collector Current
IC
3.0
5.0
Adc
PD
3.0
24
1.7
W
mW/°C
W
− Continuous
− Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1” sq.
(645 sq. mm) Collector pad on FR−4
bd material
Total PD @ TA = 25°C mounted on 0.012” sq.
(7.6 sq. mm) Collector pad on FR−4 bd material
Operating and Storage Junction
Temperature Range
B1
Schematic
1
AYW
9410 G
G
SOT−223 (TO−261)
CASE 318E
STYLE 1
1
0.75
TJ, Tstg
−55 to
+150
A
Y
W
9410
G
°C
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
42
°C/W
Thermal Resistance, Junction−to−Ambient on
1” sq. (645 sq. mm) Collector pad on FR−4 bd
material
RqJA
75
°C/W
Thermal Resistance, Junction−to−Ambient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR−4 bd material
RqJA
165
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
E
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping †
MMJT9410
SOT−223
1000 / Tape & Reel
MMJT9410G
SOT−223
(Pb−Free)
1000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 6
1
Publication Order Number:
MMJT9410/D
MMJT9410
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
−
−
6.0
−
−
−
−
−
−
20
200
−
−
10
−
−
−
0.105
0.150
−
0.150
0.200
0.450
−
−
1.25
−
−
1.10
85
80
60
200
−
−
−
−
−
−
85
135
−
200
−
−
72
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
Emitter−Base Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ICER
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
Base−Emitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
Vdc
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 8.0 Vdc)
Cib
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz)
fT
pF
pF
MHz
1.0
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. fT = |hFE| • ftest
0.75
0.50
IC = 3.0 A
0.8 A
0.25
0
1.2 A
0.5 A
0.25 A
1.0
10
100
1000
0.25
0.20
0.15
1.2 A
0.10
0.8 A
0.5 A
0.05
IC = 0.25 A
0
1.0
10
100
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
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2
1000
MMJT9410
1000
150°C
HFE , DC CURRENT GAIN
HFE , DC CURRENT GAIN
1000
25°C
100
−55°C
150°C
25°C
100
−55°C
VCE = 1.0 V
VCE = 4.0 V
10
10
0.1
1.0
0.1
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. DC Current Gain
1.0
IC/IB = 10
VBE(sat)
1.0
V, VOLTAGE (V)
V, VOLTAGE (V)
10
IC, COLLECTOR CURRENT (A)
10
VBE(sat)
0.1
0.1
VCE(sat)
VCE(sat)
IC/IB = 50
0.01
0.01
0.1
1.0
0.1
10
1.0
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “On” Voltages
Figure 6. “On” Voltages
1.2
1000
CAPACITANCE (pF)
−55°C
V, VOLTAGE (V)
1.0
0.8
25°C
150°C
0.4
100
Cob
10
VCE = 4.0 V
0
1.0
0.1
1.0
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. VBE(on) Voltage
Figure 8. Capacitance
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3
100
10
100
IC , COLLECTOR CURRENT (AMPS)
f t , CURRENT−GAIN BANDWIDTH PRODUCT
MMJT9410
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
100 ms
0.1
0.01
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
0.001
10
0.1
1.0
0.1
10
1.0
10
100
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 9. Current−Gain Bandwidth Product
Figure 10. Active Region Safe Operating Area
4.0
PD , POWER DISSIPATION (WATTS)
0.5 ms
5.0 ms
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T J(pk) = 150°C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. T J(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
3.0
TC
2.0
1.0
TA
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 11. Power Derating
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
RqJA(t) = r(t) qJA
qJA = 165°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) qJA(t)
SINGLE PULSE
0.001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.0001
0.0001
0.001
0.01
0.1
1.0
t, TIME (seconds)
Figure 12. Thermal Response
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4
10
100
1000
MMJT9410
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
4
HE
1
2
E
3
b
e1
e
0.08 (0003)
q
C
q
A
A1
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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MMJT9410/D