MMDJ3N03BJT Plastic Power Transistors SO−8 for Surface Mount Applications • Collector −Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain — hFE= 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc • Low Collector −Emitter Saturation Voltage — • VCE(sat) = 0.18 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc Miniature SO−8 Surface Mount Package − Saves Board Space DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS, 3 AMPERES (SO−8) CASE 751−07 Style 16 Emitter−1 1 8 Collector−1 Base−1 2 7 Collector−1 Emitter−2 3 6 Collector−2 Base−2 4 5 Collector−2 Top View Pinout C E B C E B © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 5 1 Schematic Publication Order Number: MMDJ3N03BJT/D MMDJ3N03BJT ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VCB 45 Vdc VCEO 30 Vdc VEB ± 6.0 Vdc Collector Current — Continuous Collector Current — Peak IC 3.0 5.0 Adc Base Current — Continuous IB 1.0 Adc TJ, Tstg – 55 to + 150 _C Characteristic Symbol Max Unit Thermal Resistance − Junction to Ambient on 1″ sq. (645 sq. mm) Collector pad on FR−4 board material with one die operating. Thermal Resistance − Junction to Ambient on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 board material with one die operating. RθJA Total Power Dissipation @ TA = 25_C mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 board material with one die operating. Derate above 25_C PD Maximum Temperature for Soldering TL Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS _C/W 100 185 1.25 10 W mW/_C 260 _C ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 30 — — Vdc Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO 6.0 — — Vdc Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125°C) ICER — — — — 20 200 Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO — — 10 — — — 0.105 — — 0.15 0.18 0.45 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) ON μAdc mAdc CHARACTERISTICS(1) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VBE(sat) — — 1.25 Vdc Base−Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) VBE(on) — — 1.10 Vdc 85 80 60 195 — — — — — DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE Vdc — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Cob — 85 135 pF Input Capacitance (VEB = 8.0 Vdc) Cib — 200 — pF Current−Gain — Bandwidth Product(2) (IC = 500 mAdc, VCE = 10 Vdc, Ftest = 1.0 MHz) fT — 72 — (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) fT = |hFE| S ftest http://onsemi.com 2 MHz VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V) MMDJ3N03BJT 1.00 0.75 IC = 3.0 A 0.50 1.2 A 0.8 A 0.25 0 0.5 A 0.25 A 10 1.0 100 0.20 0.15 IC = 1.2 A 0.8 A 0.10 0.5 A 0.25 A 0.05 0 1000 100 1000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1000 HFE, DC CURRENT GAIN 150°C 25°C 100 −55 °C 150°C 25°C 100 −55 °C VCE = 4.0 V VCE = 1.0 V 10 10 0.1 10 1.0 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. DC Current Gain 10 1.0 10 IC/IB = 10 VBE(sat) 1.0 V, VOLTAGE (V) V, VOLTAGE (V) 10 1.0 1000 HFE, DC CURRENT GAIN 0.25 VBE(sat) 0.1 0.1 VCE(sat) VCE(sat) IC/IB = 50 0.01 0.01 0.1 1.0 10 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “On” Voltages Figure 6. “On” Voltages http://onsemi.com 3 10 MMDJ3N03BJT 1000 1.2 V, VOLTAGE (V) 0.8 C, CAPACITANCE (pF) −55 °C 25°C 150°C 0.4 100 Cob 10 VCE = 4.0 V 0 0 1.0 0.1 10 0.1 VR, REVERSE VOLTAGE (V) Figure 7. VBE(on) Voltage Figure 8. Capacitance 100 10 0.5 ms IC , COLLECTOR CURRENT (A) f t , CURRENT−GAIN BANDWIDTH PRODUCT 10 IC, COLLECTOR CURRENT (A) 100 VCE = 10 V ftest = 1.0 MHz TA = 25°C 1.0 5.0 ms 100 ms 0.1 0.01 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECONDARY BREAKDOWN LIMIT 0.001 10 0.1 0.1 10 1.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Current−Gain Bandwidth Product Figure 10. Active Region Safe Operating Area 1.0 TA 0.5 0 50 100 There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 1.5 25 1.0 IC, COLLECTOR CURRENT (A) 2.0 PD, POWER DISSIPATION (W) 1.0 75 100 125 15 T, TEMPERATURE (°C) Figure 11. Power Derating http://onsemi.com 4 MMDJ3N03BJT r (t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 RθJA(t) = r(t) θJA θJA = 185°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) θJA(t) SINGLE PULSE 0.001 0.0001 0.0001 0.001 0.01 0.1 1.0 t, TIME (seconds) Figure 12. Thermal Response http://onsemi.com 5 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 MMDJ3N03BJT PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE W −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. A 8 5 S B 1 0.25 (0.010) M Y M 4 −Y− K G C N X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 STYLE 16: PIN 1. 2. 3. 4. 5. 6. 7. 8. INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 EMITTER, DIE #1 BASE, DIE #1 EMITTER, DIE #2 BASE, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #1 COLLECTOR, DIE #1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMDJ3N03BJT/D