BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 (SC70-6L) 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA 2 1 Reverse voltage rating of 40V Also available in lead-free plating (100% matte tin finish) SOT- 363 APPLICATIONS Rail-to-rail ESD protection Various Configurations (See Diagrams Below) Overshoot and undershoot switching control Mobile phones and accessories Video game consoles connector ports BAS40TW BAS40ADW BAS40CDW Isolated Triple Common Anode Common Cathode 6 5 4 1 2 3 Marking Code: S40 6 5 4 1 2 3 Marking Code: S42 6 5 4 1 2 3 Marking Code: S43 BAS40RDW BAS40SDW Reverse Series Series 6 5 4 1 2 3 Marking Code: S44 6 5 4 1 2 3 Marking Code: S45 MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted Rating Symbol Value VRRM 40 V Continuous Reverse Voltage VR 40 V Continuous Forward Current IF 200 mA Non-repetitive Peak Forward Current, t = 1sec, Square Wave I FSM 600 mA Total Power Dissipation (Note 1) P tot 225 mW Operating Junction Temperature Range TJ -55 to 125 °C Storage Temperature Range Tstg -65 to 125 °C Repetitive Peak Reverse Voltage Units Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient 8/10/2005 Symbol Value Units R thetaJA 556 °C/W Page 1 www.panjit.com BAS40TW/ADW/CDW/SDW/RDW ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted Parameter Symbol Breakdown Voltage (Note 1) V BR VF Forward Voltage (Note 1) Min Typ Max Units I BR = 10uA 40 - - V I F = 1.0mA - - 380 I F = 10mA - - 500 I F = 40mA - - 1000 V R = 25V - - 1.0 uA Conditions mV Reverse Leakage Current (Note 1) IR Total Capacitance CT 0Vdc Bias, f =1 MHz - - 5.0 pF Reverse Recovery Time (See Figure 1) t rr I F = 10mA, I R = 10mA R L= 100 Ohms; measured at IRrec = 1mA - - 5.0 ns Note 1. Short duration pulse to minimize self-heating effect 820 Ω +10 V 2 .0 k Ω 100 µH 0 .1 µ F 0 .1 µ F IF ? DUT 5 0 Ω O u tp u t P u ls e G e n e ra to r 5 0 Ω In p u t S a m p li n g O s c il lo s c o p e Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT 8/10/2005 Page 2 www.panjit.com BAS40TW/ADW/CDW/SDW/RDW TYPICAL CHARACTERISTIC CURVES (Per Diode) 100 (uA) 10 T A = 75 °C 1 T A = 125 °C 10 R T A = 125 °C Reverse Leakage Current, I Forward Current, I F (mA) 100 T A = -25 °C T A = 75 °C 1 T A = 25 °C 0.1 T A = -25 °C 0.01 T A = 25 °C 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 Forward Voltage , VF (V) 20 30 40 Reverse Voltage, V R (V) Fig. 2. Typical Forward Characteristics Fig. 3. Typical Reverse Characteristics 4 Total Capacitance, C T (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 Reverse Voltage, VR (V) Fig. 4. Typical Capacitance 8/10/2005 Page 3 www.panjit.com BAS40TW/ADW/CDW/SDW/RDW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BAS40xxx T/R7 - 7" reel, 3K units per reel BAS40xxx T/R13 - 13" reel, 10K units per reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 8/10/2005 Page 4 www.panjit.com