BC847BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 5 FEATURES 6 3 Electrically-Isolated Complimentary Transistor Pairs 2 In compliance with EU RoHS 2002/95/EC directives 1 6 5 4 1 2 3 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: 47P MAXIMUM RATINGS - NPN TJ = 25°C Unless otherwise noted Rating Symbol Value Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage Voltage VEBO 6.0 V IC 100 mA Collector Current MAXIMUM RATINGS - PNP Units TJ = 25°C Unless otherwise noted Rating Symbol Value Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage Voltage VEBO -5.0 V IC -100 mA Collector Current Units THERMAL CHARACTERISTICS Symbol Value Units Total Power Dissipation (Note 1) PD 200 mW Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C R thja 556 °C/W Characteristic Thermal Resistance, Junction to Ambient (Note 1) Note 1. FR-4 board 70 x 60 x 1mm with minimum recommended pad layout 3/5/2009 Page 1 www.panjit.com BC847BPN NPN ELECTRICAL CHARACTERISTICS (Note 2) Parameter TJ = 25°C Unless otherwise noted Min Typ Max Units Collector-Emitter Breakdown VoltageV (BR)CEO I C = 10mA 45 - - V Collector-Emitter Breakdown VoltageV (BR)CES I C = 10uA, V EB= 0 50 - - V Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA 50 - - V V (BR)EBO I E = 1.0uA 6.0 - - V - - 15 nA - - 5 uA - - 100 nA 200 - 450 - I C = 10mA, I B = 0.5mA - - 0.1 V I C = 100mA, I B = 5mA - - 0.4 V - 0.75 - V 0.58 - 0.7 V 100 - - MHz Emitter-Base Breakdown Voltage Symbol Conditions Collector Cutoff Current ICBO VCB= 30V, I E = 0 Emitter Cutoff Current IEBO V EB= 5V, I C= 0 DC Current Gain h FE V CE= 5V, I C= 2.0mA Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Voltage Gain-Bandwidth Product TJ =150°C VBE(SAT) I C = 10mA, I B = 0.5mA V BE fT V CE= 5V, I C= 2.0mA V CE= 5V, I C= 10mA f = 100MHz Collector-Base Capacitance CCBO VCB= 10V, f =1.0MHz - - 1.5 pF Emitter-Base Capacitance CEBO VEB = 0.5V, f =1.0MHz - 7 - pF PNP ELECTRICAL CHARACTERISTICS (Note 2) Parameter T = 25°C Unless otherwise noted J Min Typ Max Units Collector-Emitter Breakdown VoltageV (BR)CEO I C = -10mA -45 - - V Collector-Emitter Breakdown VoltageV (BR)CES I C = -10uA, VEB = 0 -50 - - V Collector-Base Breakdown Voltage V (BR)CBO I C = -10uA -50 - - V V (BR)EBO I E = -1.0uA -5.0 - - V - - -15 nA - - -4.0 uA - - -100 nA 200 - 475 I C = -10mA, I B = -0.5mA - - -0.3 V I C = -100mA, IB = -5mA - - -0.65 V - -0.7 - V -0.6 - -0.75 V 100 - - MHz Emitter-Base Breakdown Voltage Symbol Conditions Collector Cutoff Current ICBO VCB= -30V, I E = 0 Emitter Cutoff Current IEBO V EB= -5V, I C = 0 DC Current Gain h FE V CE= -5V, I C = -2.0mA Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Voltage Gain-Bandwidth Product TJ =150°C VBE(SAT) I C = -10mA, I B = -0.5mA V BE fT V CE= -5V, I C = -2.0mA V CE= -5V, I C = -10mA f = 100MHz Collector-Base Capacitance CCBO VCB= -10V, f =1.0MHz - - 4.5 pF Emitter-Base Capacitance CEBO VEB = -0.5V, f =1.0MHz - 11 - pF Note 2. Short duration test pulse used to minimize self-heating 3/5/2009 Page 2 www.panjit.com BC847BPN PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BC847BPN T/R7 - 3,000 units per 7 inch reel BC847BPN T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2009 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 3/5/2009 Page 3 www.panjit.com