RB731U SURFACE MOUNT TRIPLE SCHOTTKY DIODES SOT- 23-6L This device features three electrically-isolated Schottky diodes housed in a very small SOT-23-6L package. It is ideal for applications where board space is at a premium. 4 5 FEATURES 6 3 Low reverse leakage current (guaranteed <0.98uA @ 25V) 2 Reverse voltage rating of 40V 1 Lead-free plating (100% matte tin finish) 66 333 55 222 44 444 55 66 111 APPLICATIONS Mobile phones and accessories Video game consoles connector ports PDA's 11 22 33 Device Marking: 731 MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted Rating Symbol Value VRRM 40 V Continuous Reverse Voltage VR 40 V Average Rectified Forward Current IO 30 mA Non-repetitive Peak Forward Current (60Hz, 1 cycle) I FSM 200 mA Total Power Dissipation (Note 1) P tot 225 mW Operating Junction Temperature Range TJ -55 to 125 °C Storage Temperature Range Tstg -65 to 150 °C Repetitive Peak Reverse Voltage Units Note 1. FR-4 Board 70 x 60 x 1mm. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient 2/23/2009 Symbol Value Units R thetaJA 556 °C/W Page 1 www.panjit.com RB731U ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Breakdown Voltage (Note 1) V BR I BR = 10uA 40 - - V Forward Voltage (Note 1) VF I F = 1mA - - 370 mV Reverse Leakage Current (Note 1) IR V R = 25V - - 0.98 uA Total Capacitance CT 1Vdc Bias, f =1 MHz - 2.0 5.0 pF Reverse Recovery Time (See Figure 1) t rr I F = 10mA, I R = 10mA R L= 100 Ohms; measured at IRrec = 1mA - - 5.0 ns Note 1. Short duration pulse to minimize self-heating effect 820 Ω +10 V 2 .0 k Ω 100 µH 0 .1 µ F 0 .1 µ F IF ? DUT 5 0 Ω O u tp u t P u ls e G e n e ra to r 5 0 Ω In p u t S a m p li n g O s c il lo s c o p e Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT 2/23/2009 Page 2 www.panjit.com RB731U TYPICAL CHARACTERISTIC CURVES (Per Diode) 100 (uA) 10 T J = -25 °C T J = 75 °C 1 T J = 125 °C 10 R T J = 125 °C Reverse Leakage Current, I Forward Current, I F (mA) 100 T J = 75 °C 1 T J = 25 °C 0.1 T J = -25 °C 0.01 T J = 25 °C 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 Forward Voltage , VF (V) 20 30 40 Reverse Voltage, V R (V) Fig. 2. Typical Forward Characteristics Fig. 3. Typical Reverse Characteristics 3.5 f=1.0MHz 2.5 Total Capacitance, C T (pF) 3 2 1.5 1 0.5 0 0 10 20 30 40 Reverse Voltage, VR (V) Fig. 4. Typical Capacitance 2/23/2009 Page 3 www.panjit.com RB731U PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION RB731U T/R7 - 7" reel, 3K units per reel RB731U T/R13 - 13" reel, 10K units per reel Copyright PanJit International, Inc 2009 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 2/23/2009 Page 4 www.panjit.com