PANJIT RB731U

RB731U
SURFACE MOUNT TRIPLE SCHOTTKY DIODES
SOT- 23-6L
This device features three electrically-isolated Schottky diodes housed in a
very small SOT-23-6L package. It is ideal for applications where board
space is at a premium.
4
5
FEATURES
6
3
Low reverse leakage current (guaranteed <0.98uA @ 25V)
2
Reverse voltage rating of 40V
1
Lead-free plating (100% matte tin finish)
66
333
55
222
44
444
55
66
111
APPLICATIONS
Mobile phones and accessories
Video game consoles connector ports
PDA's
11
22
33
Device Marking: 731
MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted
Rating
Symbol
Value
VRRM
40
V
Continuous Reverse Voltage
VR
40
V
Average Rectified Forward Current
IO
30
mA
Non-repetitive Peak Forward Current (60Hz, 1 cycle)
I FSM
200
mA
Total Power Dissipation (Note 1)
P tot
225
mW
Operating Junction Temperature Range
TJ
-55 to 125
°C
Storage Temperature Range
Tstg
-65 to 150
°C
Repetitive Peak Reverse Voltage
Units
Note 1. FR-4 Board 70 x 60 x 1mm.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
2/23/2009
Symbol
Value
Units
R thetaJA
556
°C/W
Page 1
www.panjit.com
RB731U
ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Breakdown Voltage (Note 1)
V BR
I BR = 10uA
40
-
-
V
Forward Voltage (Note 1)
VF
I F = 1mA
-
-
370
mV
Reverse Leakage Current (Note 1)
IR
V R = 25V
-
-
0.98
uA
Total Capacitance
CT
1Vdc Bias, f =1 MHz
-
2.0
5.0
pF
Reverse Recovery Time
(See Figure 1)
t rr
I F = 10mA, I R = 10mA
R L= 100 Ohms;
measured at IRrec = 1mA
-
-
5.0
ns
Note 1. Short duration pulse to minimize self-heating effect
820 Ω
+10 V
2 .0 k Ω
100 µH
0 .1 µ F
0 .1 µ F
IF
?
DUT
5 0 Ω O u tp u t
P u ls e
G e n e ra to r
5 0 Ω In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA
2. Input pulse is adjusted to IR(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
2/23/2009
Page 2
www.panjit.com
RB731U
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
(uA)
10
T J = -25 °C
T J = 75 °C
1
T J = 125 °C
10
R
T J = 125 °C
Reverse Leakage Current, I
Forward Current, I
F
(mA)
100
T J = 75 °C
1
T J = 25 °C
0.1
T J = -25 °C
0.01
T J = 25 °C
0.1
0.001
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
Forward Voltage , VF (V)
20
30
40
Reverse Voltage, V R (V)
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
3.5
f=1.0MHz
2.5
Total Capacitance, C
T
(pF)
3
2
1.5
1
0.5
0
0
10
20
30
40
Reverse Voltage, VR (V)
Fig. 4. Typical Capacitance
2/23/2009
Page 3
www.panjit.com
RB731U
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
RB731U T/R7 - 7" reel, 3K units per reel
RB731U T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2009
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
2/23/2009
Page 4
www.panjit.com