Ordering number : ENN7613 2SC5957 NPN Triple Diffused Planar Silicon Transistor 2SC5957 Switching Regulator Applications Features • • • • Package Dimensions High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm 2010C [2SC5957] 10.2 3.6 4.5 1.3 18.0 15.1 2.7 6.3 5.1 14.0 5.6 1.2 0.8 0.4 1 : Base 2 : Collector 3 : Emitter 2.7 1 2 3 Specifications 2.55 2.55 SANYO : TO-220 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V IC 10 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤300µs, duty cycle≤10% Tc=25°C 20 A 3.5 A 1.75 W 50 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ max VCB=400V, IE=0 VEB=5V, IC=0 Unit 10 µA 10 µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504KB TS IM TA-100659 No.7613-1/4 2SC5957 Continued from preceding page. Parameter Symbol DC Current Gain VCE=10V, IC=1.2A 15 Cob VCB=10V, f=1MHz 80 Base-to-Emitter Saturation Voltage VBE(sat) 20* VCE=5V, IC=6A 10 VCE=5V, IC=1mA 10 V(BR)CBO V(BR)CEO IC=1mA, IE=0 IC=5mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V ton tstg Storage Time Fall Time 50* MHz pF IC=6A, IB=1.2A IC=6A, IB=1.2A Collector-to-Emitter Breakdown Voltage 0.8 V 1.5 V 500 V 400 V 7 V IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V tf Unit max fT VCE(sat) Turn-ON Time typ VCE=5V, IC=1.2A Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage min hFE1 hFE2 hFE3 Gain-Bandwidth Product Output Capacitance Ratings Conditions 0.5 µs 2.5 µs 0.3 µs * : The hFE1 of the 2SC5957 is classified as follows. Rank M N hFE 20 to 40 30 to 50 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL 50Ω + 470µF + 100µF VCC=200V IC -- VCE 700mA 600mA 500mA 7 400mA 300mA 6 200mA 5 4 100mA 3 6 5 4 3 2 2 1 1 IB=0 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 0 25°C 3 2 --40°C 10 0.6 0.8 1.0 1.2 1.4 IT05153 VCE(sat) -- IC IC / IB=5 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=120°C 5 0.4 3 VCE=5V 7 0.2 Base-to-Emitter ON-State Voltage, VBE(on) -- V IT05069 hFE -- IC 100 1.0 7 5 °C 3 2 25 25°C Ta= --40°C 0.1 7 120°C 5 3 2 7 5 0.01 0 10 °C 5 20 4 =1 3 Ta 2 C 1 0° 0 --4 0 DC Current Gain, hFE 25°C --40°C A 0m 100 Collector Current, IC -- A 8 VCE=5V 7 Collector Current, IC -- A 9 9 IC -- VBE(on) 8 800mA A 00m 0°C 10 Ta= 12 VBE= --5V 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT05155 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT05156 No.7613-2/4 2SC5957 VBE(sat) -- IC 10 Switching Time, SW Time -- µs 5 3 2 25°C 1.0 Ta= --40°C 7 120°C 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A era 1m op s tio n 10 m s 1.0 7 5 S/ B Li 3 2 ted mi Collector Current, IC -- A DC 3 2 0.1 7 5 3 2 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 5 he at 1.0 sin k 0.5 0 3 5 7 2 10 3 IT05924 1.0 7 5 Tc=25°C IB2= --1.8A Const L=100µH 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Sustain Voltage, VCEX(sus) -- V Collector Dissipation, PC -- W 1.5 2 2 5 7 1000 IT05075 PC -- Tc 60 1.75 7 1.0 3 IT06390 2.0 No 5 10 7 5 0.1 1.0 7 PC -- Ta 2.5 3 ICP 2 Tc=25°C Single pulse 0.01 1.0 2 Reverse Bias ASO 3 3 2 Collector Dissipation, PC -- W 0.1 7 5 2 s 0µ IC=10A tf 3 10 10 7 5 3 2 5 ≤50µs ICP=20A 3 2 tstg 1.0 7 5 Collector Current, IC -- A Forward Bias ASO 5 VCC=200V IC/IB=5 IB2/IB1= --2.5 R load 3 2 0.01 0.1 5 7 10 IT05154 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 SW Time -- IC 10 7 5 IC / IB=5 50 40 30 20 10 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05866 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT05867 No.7613-3/4 2SC5957 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7613-4/4