2SC6065 Ordering number : EN8561 2SC6065 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 8 V 1.5 A Collector Current V Base Current IC ICP IB Collector Dissipation PC 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current (Pulse) PW≤300µs, duty cycle≤10% 3 A 0.7 A Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO hFE1 DC Current Gain hFE2 hFE3 Conditions VCB=400V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.7A VCE=5V, IC=1mA Ratings min typ max 20 Unit 10 µA 10 µA 50 10 10 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12006CB MS IM TB-00001637 No.8561-1/4 2SC6065 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob VCE=10V, IC=0.1A VCB=10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A Output Capacitance Collector-to-Base Breakdown Voltage Ratings Conditions min 20 V(BR)CBO V(BR)CEO IC=1mA, IE=0A IC=5mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0A IC=1A, IB1=0.2A, IB2=--0.4A, RL=200Ω, VCC=200V ton tstg Storage Time Fall Time tf Unit max MHz 10 Collector-to-Emitter Breakdown Voltage Turn-ON Time typ pF 0.8 V 1.5 V 500 V 400 V 8 V 0.5 µs IC=1A, IB1=0.2A, IB2=--0.4A, RL=200Ω, VCC=200V 2.5 µs IC=1A, IB1=0.2A, IB2=--0.4A, RL=200Ω, VCC=200V 0.25 µs Package Dimensions unit : mm 7519-003 Switching Time Test Circuit IB1 2.5 6.9 1.45 1.0 PW=20µs D.C.≤1% RB 50Ω RL VR 1.0 4.5 OUTPUT IB2 INPUT 1.0 + 100µF 1.0 0.9 1 2 4.0 0.6 0.5 3 VBE= --5V VCC=200V 0.45 1 : Emitter 2 : Collector 3 : Base 2.54 2.54 + 470µF SANYO : NMP IC -- VCE 150mA 1.2 100mA 1.0 50mA 0.8 0.6 20mA 10mA 0.4 1.5 1.0 0°C 25° C --40 °C 1.4 VCE=5V 12 350mA 300mA 250mA 200mA Ta= 1.6 4 500mA Collector Current, IC -- A 1.8 IC -- VBE 2.0 00mA 50mA 4 Collector Current, IC -- A 2.0 0.5 0.2 IB=0mA 0 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 9 0 10 IT06213 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltag, VBE -- V 1.2 1.4 IT06214 No.8561-2/4 2SC6065 Ta=120°C 25°C 7 5 3 --40°C 2 10 7 5 3 2 1.0 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 Switching Time, SW Time -- µs 120°C 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A Collector Current, IC -- A 10 0m op s er 0.1 7 5 3 2 0.01 7 5 3 2 ati on 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 Collector-to-Emitter Voltage, VCE -- V 3 5 7 1.0 2 3 5 7 10 IT06216 SW Time -- IC IC / IB1=5 IB2 / IB1=2 R load 3 tst g 2 1.0 7 5 tf 3 2 2 3 5 7 2 1.0 Collector Current, IC -- A 3 IT06218 Reverse Bias A S O 3 2 1.0 7 5 3 2 0.1 7 5 Ta=25°C IB2= --0.3A L=500µH, single pulse 0.01 10 2 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 1.0 2 5 3 2 Ta=25°C Single pulse 0.001 0.1 5 7 0.1 10 7 5 s 0µ s 10 00µ 5 s 1m ms 10 IC=1.5A DC 3 IT06217 ICP=3A 1.0 7 5 3 2 2 0.1 0.1 3 Forward Bias A S O 7 5 3 2 25°C 3 2 Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Ta= --40°C 5 °C Ta= --40 120°C 0.1 7 5 7 2 7 3 2 10 3 1.0 1.0 7 5 IT06215 IC / IB=5 25°C 3 2 0.01 0.01 3 VBE(sat) -- IC 5 IC / IB=5 Ta=1 20°C 25°C DC Current Gain, hFE 100 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 VCE(sat) -- IC 10 7 5 VCE=5V --40° C hFE -- IC 3 7 1000 IT06220 Collector Dissipation, PC -- W 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10278 No.8561-3/4 2SC6065 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No.8561-4/4