Ordering number : ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. unit : mm 2174A [2SD2646] 5.6 3.4 16.0 3.1 0.8 21.0 4.0 22.0 8.0 5.0 • Package Dimensions 2.8 2.0 1 2 20.4 0.7 2.1 0.9 3 1 : Base 2 : Collector 3 : Emitter 3.5 5.45 Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 700 V Emitter-to-Base Voltage VEBO 5 V IC 10 A Collector Current (Pulse) ICP 25 A Collector Dissipation PC Collector Current Junction Temperature Tj Storage Temperature Tstg Tc=25°C 3.0 W 80 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current ICBO ICES Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 Ratings min typ max Unit 10 µA 1.0 mA 1.0 mA 700 V VBE=4V, IC=0 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-3089 No.6922-1/4 2SD2646 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Fall Time min typ tf VCE=5V, IC=1A 15 VCE=5V, IC=8A 5 Unit max IC=7.2A, IB=1.44A IC=7.2A, IB=1.44A hFE1 hFE2 DC Current Gain Ratings Conditions 3 V 1.5 V 8 IC=5A, IB1=1A, IB2=--2A µs 0.3 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL 40.0Ω 50Ω + 470µF + 100µF VBE= --2V VCC=200V IC -- VCE 12 1.8A 1.6A VCE=5V 1.4A 1.2A 2.0A 10 C 2 2 IB=0 0 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 0 25°C 3 --40°C 2 10 7 5 3 2 0.6 0.8 1.0 1.2 IT03005 VCE(sat) -- IC 10 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 0.4 Base-to-Emitter Voltage, VBE -- V VCE=5V Ta=120°C 0.2 IT03004 hFE -- IC 100 7 0 10 9 C 4 --40 ° 0.2A 4 6 C 0.4A 25° 6 8 20° 1.0A 0.8A 0.6A 8 Ta= 1 Collector Current, IC -- A Collecotr Current, IC -- A 10 DC Current Gain, hFE IC -- VBE 12 IC / IB=5 3 2 1.0 7 5 25° 3 2 C 0°C 2 Ta=1 0.1 7 5 C --40° 3 2 1.0 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT03006 0.01 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT03007 No.6922-2/4 2SD2646 SW Time -- IC VCC=200V IC / IB1=5 IB2 / IB1=2 R load 5 tstg 3 2 1.0 7 5 3 tf 2 0.1 0.1 2 3 5 7 2 1.0 3 5 10 IT03008 0µ s 30 s 0µ 1m s ms DC 1.0 7 5 3 2 Collector Current, IC -- A 10 P C =8 10 ati er op on Collector Current, IC -- A 7 5 3 2 2 3 5 7 2 1.0 3 5 7 10 IT03009 Reverse Bias A S O L=500µH IB2= --2A Tc=25°C Single pulse 2 0W 10 7 5 3 2 1.0 7 5 3 2 Tc=25°C Single pulse 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 0.1 100 5 7 1000 IT03010 2 3 5 7 2 1000 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 3.5 IT03011 PC -- Tc 90 80 Collector Dissipation, PC -- W 3.0 Collector Dissipation, PC -- W 1.0 3 IC=10A 0.1 7 5 3 2 2 5 ICP=25A 10 7 5 3 2 tstg 3 Base Current, IB2 -- A Forward Bias A S O 100 7 5 3 2 5 0.1 0.1 7 Collector Current, IC -- A VCC=200V IC=5A IB1=1A R load 7 tf Switching Time, SW Time -- µs 7 SW Time -- IB2 10 Switching Time, SW Time -- µs 10 2.5 No 2.0 he at sin k 1.5 1.0 0.5 70 60 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03012 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03013 No.6922-3/4 2SD2646 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS No.6922-4/4