Ordering number:EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm 2048B [2SC5444] 20.0 3.3 1.0 26.0 5.0 2.0 2.0 3.4 20.7 0.6 1.2 5.45 Specifications 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 2.8 1 5.45 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO VEBO 800 V 6 V IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC 3.5 W Junction Temperature Tj Storage Temperature Tstg Emitter-to-Base Voltage Collector Current 210 W 150 ˚C –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Conditions ICES VCE=1500V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1.0A VCE=5V, IC=20A Ratings min typ Unit max 1.0 mA 1.0 mA 10 µA 800 V 20 30 4 7 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61099TS (KOTO) TA-1617 No.6102–1/4 2SC5444 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Storage Time Ratings Conditions min typ Unit max IC=20A, IB=5A 5 IC=20A, IB=5A 1.5 V tstg IC=12A, IB1=2.4A, IB2=–4.8A 3.0 µs tf IC=12A, IB1=2.4A, IB2=–4.8A 0.2 µs Fall Time V Switching Time Test Circuit PW=20µs D.C.≤1% I B1 IB 2 RB RL=16.7Ω + + 470µF 100µF VCC=200V VBE=-2V I C - VCE 28 20 6.0A 5.0A 4.0A 3.0A 18 2.0A Collector Current, IC – A 26 24 22 16 14 1.0A 12 10 0.5A 8 9.0A 8.0A 7.0A 6 I C - VBE 25 A 10.0 Collector Current, IC – A 30 VCE =5V 20 15 120 °C 25°C –40° C VR 50Ω OUTPUT 10 Ta= I NPUT 5 4 2 0 0 IB=0 1 2 3 4 5 6 7 8 9 0 0 10 0.2 Collector-to-Emitter Voltage, VCE – V hFE - I C 7 VCE =5V Ta=120°C DC Current Gain, hFE 3 25°C 2 –40°C 10 7 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – A 0.6 0.8 1.0 1.2 1.4 2 3 VCE(sat) - I C 10 Collector-to-Emitter Saturation Voltage, VCE(sat) – V 5 0.4 Base-to-Emitter Voltage, VBE – V 5 IC / IB=5 7 5 3 2 1.0 7 5 3 2 0.1 7 5 Ta=-40°C 25°C 120°C 3 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC – A No.6102–2/4 2SC5444 SW Time - I C 7 t stg 3 2 1.0 7 tf 5 3 2 VCC = 200V IC / IB1=5 IB2/ IB1=2 R load 0.1 7 5 7 0.1 2 5 3 2 1.0 7 5 7 2 1.0 3 5 7 2 10 3 2 7 7 3 tf 5 0.1 3 ts tg 7 Switching Time, SW Time – µs Switching Time, SW Time – µs 5 SW Time - I B2 10 VCC = 200V IC=12A IB1=2.4A R load 2 0.1 3 Collector Current, IC – A 0W s Collector Current, IC – A 21 1m 10 7 5 3 2 DC op er 1.0 7 5 3 2 at io n 0.1 7 5 Ta=25°C 3 Single pulse 2 2 3 5 7 10 3 5 7 100 2 3 3 5 7 2 10 10 7 5 3 2 1.0 7 5 5 7 1000 0.1 5 2 L =100µH IB2 = -5A Tc = 25°C Single pulse 7 2 100 Collector-to-Emitter Voltage, VCE – V 3 5 7 2 1000 3 Collector-to-Emitter Voltage, VCE – V P C - Ta 4 2 1.0 3 2 3 2 2 7 Reverse Bias A S O 100 7 5 s 0µ P C= s 10m Collector Current, IC – A Forward Bias A S O ICP IC 30 100 7 5 3 2 5 Base Current, IB2 – A P C - Tc 220 210 200 Collector Dissipation, PC – W Collector Dissipation, PC – W 3.5 3 No he at 2 sin k 1 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – °C No.6102–3/4 2SC5444 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1999. Specifications and information herein are subject to change without notice. PS No.6102–4/4