7MP05SF Ordering number : EN8667A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 7MP05SF High-Frequency General-Purpose Amplifier Applications Features • • • High fT and small Cre (fT=750MHz typ, Cre=1.3pF typ). Complementary pair with the 7MN05SF. Small package permitting 7MP05SF applied sets to made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --15 Collector-to-Emitter Voltage VCEO --12 V Emitter-to-Base Voltage VEBO --3 V Collector Current Junction Temperature IC PC Tj Storage Temperature Tstg Collector Dissipation V --50 mA 150 mW 150 °C --55 to +150 °C Mounted on a ceramic board (600mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=--12V, IE=0A VEB=--2V, IC=0A DC Current Gain Gain-Bandwidth Product hFE fT VCE=--10V, IC=--5mA VCE=--10V, IC=--5mA Output Capacitance Cob Reverse Transfer Capacitance Cre VCB=--10V, f=1MHz VCB=--10V, f=1MHz Collector-to-Emitter Saturation Voltage Noise Figure VCE(sat) NF IC=--10mA, IB=--1mA VCE=--10V, IC=--10mA, f=100MHz Ratings min typ max 60 Unit --0.1 µA --0.1 µA 200 750 MHz 1.7 pF 1.3 pF --0.1 --0.3 3.0 V dB Marking : WD Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 32406 MS IM TB-00002143 / N3005AA MS IM TB-00001514 No.8667-1/4 7MP05SF Package Dimensions unit : mm 7029-002 Top View 0.3 1.4 0.25 1.4 0.8 3 2 1 0.1 0.3 0.2 1 : Base 2 : Emitter 3 : Collector 0.07 2 1 0.07 0.6 0.45 3 SANYO : SSFP Bottom View IC -- VCE --60 IC -- VBE --60 VCE= --10V A --700µ A µ 0 --60 A µ --500 --400µA --40 --30 --50 Collector Current, IC -- mA Collector Current, IC -- mA --50 --300µA --200µA --20 --100µA --30 --20 --10 --10 IB=0µA 0 0 --2 --4 --6 --8 --10 0 --12 Collector-to-Emitter Voltage, VCE -- V 0 --14 2 100 7 5 3 2 3 5 7 --1.0 2 3 5 7 --10 Collector Current, IC -- mA 2 3 5 7 --100 IT09512 --0.6 --0.8 --1.0 --1.2 IT09924 fT -- IC 3 Gain-Bandwidth Product, f T -- MHz 3 --0.4 Base-to-Emitter Voltage, VBE -- V VCE= --10V 2 --0.1 --0.2 IT09510 hFE -- IC 5 DC Current Gain, hFE --40 VCE= --10V f=100MHz 2 1000 7 5 3 2 100 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- mA 5 7 --100 IT09513 No.8667-2/4 7MP05SF Cob -- VCB 7 Cre -- VCB 7 f=1MHz Reverse Transfer Capacitance, Cre -- pF f=1MHz Output Capacitance, Cob -- pF 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector-to-Base Voltage, VCB -- 3 2 1.0 7 5 3 --0.1 7 --10 2 V IT09514 2 3 5 7 --1.0 2 3 5 PG, NF -- IC 5 VCE= --10V f=100MHz IC / IB=10 3 --1.0 Power Gain, PG -- dB Noise Figure, NF -- dB Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 --10 IT09515 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 2 5 7 5 3 2 --0.1 PG 2 10 7 5 3 NF 2 7 5 1.0 7 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- mA 5 IT09516 PC -- Ta 200 Collector Dissipation, PC -- mW 7 150 3 5 7 --1.0 2 3 5 7 --10 2 Collector Current, IC -- mA 3 5 7 --100 IT09517 M ou nte do na ce ram 100 ic bo ard (6 00 mm 50 2 ✕0 .8 mm ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09807 No.8667-3/4 7MP05SF Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.8667-4/4