Ordering number : EN8214 Monolithic Linear IC LA5683T 4ch Switching Regulator Control IC Overview The LA5683T is 4ch switching regulator control IC. Functions • Low-voltage operation (minimum 1.8V). • OUT1 and OUT2 can drive external PNP transistors. • OUT3 and OUT4 can drive external NPN transistors. • 4-independent-channel standby circuit built-in. • ±1% accuracy reference voltage. • Supports MOS transistor drive. • Channel 2 dead time internally set fixed, duty cycle = 100%. (The dead time for channels 1, 3, and 4 are set externally.) Specifications Maximum Ratings at Ta = 25°C Parameter Symbol Supply voltage 1 VCC max Allowable power dissipation Pd max Operating temperature Storage temperature Conditions Ratings Unit 9 V 0.4 W Topr -20 to +85 °C Tstg -55 to +150 °C Independent IC Operating Conditions at Ta = 25°C Parameter Symbol Conditions Ratings Unit Supply voltage 1 VCC 1.8 to 8 Supply voltage 2 VBIAS 1.8 to 8 V Output sync current ISINK max 0 to 30 mA Reference voltage output current IREF 0 to 1 mA Timing resistor RT 3 to 30 kΩ Timing capacity CT 100 to 1000 Triangular wave frequency fOSC 0.1 to 1 V pF MHz Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 92706 / 40506 MS IM B8-7242 No.8214-1/12 LA5683T Electrical Characteristics at Ta = 25°C, VCC = VSTBY1 to 4 = 3V, SCP = 0V Parameter Symbol Ratings Conditions min typ Unit max [Error amplifier] IN+ pin internal bias voltage VB Pins IN1+, IN2+, IN3+, and IN4+ Output L level voltage CH1 to CH4 VLow_FB1 IN1− = 2.0 IFB1 = 20µA Output H level voltage CH1 to CH4 VHi _FB1 IN1− = 0V IFB1 = -20µA 0.500 0.506 0.512 1 2.25 V V V [Protection circuit] Threshold voltage VSCP SCP pin current ISCP 1.1 1.25 1.4 V µA 3.9 [Idle period adjustment block] Input bias current IB_DTC µA -15 -3 Threshold voltage 1 CH1 VTH1_DTC IN1− = 0V, duty cycle = 100% 0.67 0.77 0.87 V Threshold voltage 2 CH1 VTH2_DTC IN1− = 0V, duty cycle = 0% 0.35 0.4 0.45 V 0.72 0.8 0.88 V 0.4 0.45 0.5 V 3.16 3.95 4.74 µA 160 200 240 kΩ Threshold voltage 3 CH3 to CH4 VTH3_DTC IN3, IN4− = 0V, duty cycle = 100% Threshold voltage 4 CH3 to CH4 VTH4_DTC IN3, IN4− = 0V, duty cycle = 0% CSOFT = 0V [Software start block (CH1 to CH4)] Software start current CH1 to CH4 ISF Software start resistance CH1 to CH4 RSF [Output blocks 1 and 2 (CH1 and CH2)] OUT pin source current OUT pin sink current IOUT12_SOUR IN1, 2− = 0V DTC1 = 0V IOUT12_SINK VOUT1, 2 = 2.7V ICAPH = 0.5mA IN1, 2− = 0V DTC1 = 1.0V VOUT1, 2 = 2.3V 10 mA 35 45 55 mA 20 30 40 mA [Output blocks and 4 (CH3 and CH4)] OUT pin source current IOUT34_SOUR VOUT3, 4 = 0.9V DTC3, 4 = 1.0V IN3, 4 = 0V OUT pin sink current IOUT34_SINK VOUT3, 4 = 0.3V DTC3, 4 = 1.0V IN3, 4 = 1.0V OUT pin high level voltage VOUT34_Hi IOUT3, 4 = -10mA DTC3, 4 = 1.0V IN3, 4 = 0V OUT pin low level voltage VOUT34_Low IOUT3, 4 = 10mA DTC3, 4 = 0V 30 mA 2 V 0.2 IN3, 4 = 1.0V V [Triangular wave form generator block] Current setting pin voltage VT_RT RT = 5.6kΩ Output current IOH_CT VCT = 0.5V, RT = 5.6kΩ 1.190 1.260 1.330 V µA 230 Output current ratio ∆IO_CT 0.8 1.0 1.2 Oscillation frequency fOSC1 380 440 500 1.244 1.257 1.270 kHz [Reference voltage block] Reference voltage VREF IREF = -1mA Line regulation VLN_REF VCC = 1.8V to 8V 10 mV Load regulation VLD_REF IREF = -0.1mA to -1mA 10 mV V [STBY circuit] On voltage VON_STBY Off voltage VOFF_STBY Pin input current IIN_STBY 1.15 V VSTBY1 to 4 = 3V 0.2 V 70 µA 18 mA 1 µA [All circuits] Operating-time current drain ICC1 FB1, 2, 3, 4 = 1.5V DTC1, 3, 4 = 1.5V Standby-time current drain ICC2 VSTBY1 to 3 = 0V 15 No.8214-2/12 LA5683T Package Dimensions unit : mm 3253B 0.5 5.6 7.6 19 1 18 0.15 (1.0) 0.08 1.2max 0.18 (0.63) Allowable power dissipation, Pd max - W 9.75 36 (0.5) Pd max - Ta 1.2 1.0 Mounted on a thermal evaluation board 0.90 0.8 0.6 Independent IC 0.4 0.47 0.40 0.21 0.2 0 --20 0 20 40 60 Ambient temperature, Ta - °C 80 100 ILA07007 SANYO : TSSOP36(275mil) Pin Assignment No.8214-3/12 LA5683T Block Diagram and Application Circuit Examples 1 VREF 9 Q1 : CPH3121 34 CAPL1 + + - - 35 OUT1 36 + IN1- 30 FB1 6 7, 8 Rb1=180Ω 5 D3 : SBS004 Cb1=4700pF C10=1µF CAPH2 4 VO1=3.3V/140mA VO1B=-7.5V/10mA C2=1000pF 31 to VO2 3 + IN2- 7 VS 1 R9=100Ω FB2 6 Ro7=47kΩ + + - OUT4 - IN4- R19=100Ω 21 FB4 C15=0.047µF L9 : 10µH D7 : SBS005 Q4 : MCH3409 GND 24 C8=560pF CT2 C7=560pF CT1 RT 27 R1=5.6kΩ 23 C6=0.01µF 10 OSC STBY4 8 STBY3 29 STBY2 STBY1 STBY Q102 : CPH3308 VO4=12V/100mA to STBY4 Ro12=47kΩ CSOFT4 20 18 19 26 Q101 : CPH3215 Ro9=100kΩ + + Co16=10µF DTC4 Co14=4.7µF C14=1µF R16=16kΩ R15= 9.75kΩ C20=33pF 15 22 C16=2.2µF to STBY3 Q3 : MCH3409 CSOFT3 13 Co13=0.47µF FB3 12 Q100 : CPH3307 VO3=3.3V/500mA Co17=0.47µF IN3- D6 : SBS004 Ro5=1kΩ L6=6.8µH 17 Ro10=1kΩ OUT3 - Ro4=100kΩ + + - Ro6=47kΩ + + Cb2=4700pF Ro11=47kΩ C3=10µF 16 C13=0.047µF to VO4 D5 : SBS004 Co12=10µF R11=16kΩ VBIAS DTC3 14 11 R14=100Ω VO2=1.5V/200mA Rb2=180Ω CSOFT2 5 R10= 10kΩ C12=1µF C19=33pF to VO3 L4 : 22µH Q2 : CPH3121 2 Co9=10µF OUT2 Co7=4.7µF - - Co10=4.7µF R7b=0Ω R8=5.1kΩ R7a=10kΩ CAPL2 + + C11=0.047µF R12b=1.1kΩ R13=5.1kΩ R12a=27kΩ 3 D1 : 2 SBS004 R6=100Ω C9=0.047µF CSOFT1 32 R17b=5.6kΩ R18=5.1kΩ R17a=110kΩ 1 VO1A=15V/15mA Co5=3.3µF CAPH1 4 Co1=2.2µF DTC1 33 D2 : SBS005 T1 Co3=3.3µF VCC SCP VCC Co4=3.3µF 28 C17=10µF C5=1µF VREF C4=0.022µF 25 C1=1000pF C18=33pF R4b=1.3kΩ R4a=5.1kΩ R5=27kΩ to VO1 R3=18.66kΩ R2=15kΩ SCP 2-dry-battery (1.8V to 3.2V) configuration Q103 : CPH3215 ILA07050 T1 = Sumida product L4 = TDK product: RLF5018-220MR63 L6 = TDK product: SLF6028-6R8M1R5 L9 = Toko product: 636CY-100M No.8214-4/12 LA5683T Application Circuit Examples 2 28 VCC VREF 9 34 CAPL1 35 - - 30 R6=1kΩ 31 OUT1 36 + IN1- Co10=4.7µF CAPH1 + + L7 : 47µH Q3 : MCH3309 DTC1 33 VO2=1.5V/200mA Co13=10µF SCP VCC C17=10µF C5=1µF VREF C4=0.022µF 25 C1=1000pF C18=33pF R4b=0kΩ R4a=5.1kΩ R5=10kΩ to VO2 R3=18.66kΩ R2=15kΩ SCP 4-dry battery (3.5V to 6.5V) configuration D6 : SBS004 FB1 C10=1µF C9=0.047µF CSOFT1 32 CAPH2 4 to VO1 7 R9=1kΩ 6 OUT2 + IN2- VS 2 1 FB2 L4 : 22µH Q2 : MCH3309 VO1=3.3V/500mA Co9=10µF - - Co7=4.7µF 3 + + C2=1000pF R7b=1.3Ω R8=5.1kΩ R7a=27kΩ CAPL2 D5 : SBS004 C11=0.047µF 3 D1 : 2 SBS004 6 FB3 7, 8 5 + + OUT4 - 19 L9 : 10µH Co14=4.7µF IN422 FB4 21 C15=0.047µF D7 : SBS005 Q4 : MCH3409 GND 24 C8=560pF CT2 C7=560pF CT1 RT 27 R1=5.6kΩ 23 C6=0.01µF 10 OSC STBY4 8 STBY3 29 STBY2 STBY1 STBY Q102 : CPH3308 VO4=12V/100mA to STBY4 Ro12=47kΩ CSOFT4 20 VO3B=-7.5V/10mA Ro11=47kΩ + + Co16=10µF DTC4 - 18 VO3=3.3V/140mA Co5=3.3µF C14=1µF R16=16kΩ 15 VO3A=15V/15mA D3 : SBS004 Q1 : MCH3409 R15= 9.75kΩ C20=33pF 1 CSOFT3 13 R19=100Ω C16=2.2µF 4 Co17=0.47µF IN3- D2 : SBS005 T1 Co3=3.3µF 17 Ro9=100kΩ 12 OUT3 - Ro10=1kΩ + + Co4=3.3µF + + C13=0.047µF to VO4 R17b=5.6kΩ R18=5.1kΩ R17a=110kΩ DTC3 - 11 16 Co1=2.2µF R11=16kΩ R14=100Ω 14 VBIAS C3=10µF R10= 10kΩ C12=1µF C19=33pF to VO3 R12b=1.1kΩ R13=5.1kΩ R12a=27kΩ CSOFT2 5 Q103 : CPH3215 26 ILA07051 T1 = Sumida product L4 = TDK product: RLF5018-220MR63 L7 = Toko product: 636CY-470M L9 = Toko product: 636CY-100M No.8214-5/12 LA5683T Application Circuit Examples 3 28 VCC 9 VREF CAPH1 34 CAPL1 35 - - OUT1 36 + IN1- 30 R6=1kΩ Co10=4.7µF 33 + + L7 : 47µH Q3 : MCH3309 DTC1 VO2=1.5V/200mA Co13=10µF SCP VCC C17=10µF C5=1µF VREF C4=0.022µF 25 C1=1000pF C18=33pF R4b=0Ω R4a=5.1kΩ R5=10kΩ to VO2 R3=18.66kΩ R2=15kΩ SCP 1-lithium ion battery (2.5V to 4.2V) configuration D6 : SBS004 FB1 31 C10=1µF C9=0.047µF CSOFT1 32 CAPH2 4 to VO1 IN2- VS 1 FB2 6 Co8=4.7µF Q2 : MCH3309 L4 : 15µH D5 : SBS004 C11=0.047µF - 17 IN3- 1 3 D1 : 2 SBS004 6 7, 8 5 CSOFT3 13 + + OUT4 - IN422 21 FB4 C15=0.047µF L9 : 10µH D7 : SBS005 Q4 : MCH3409 Ro12=47kΩ GND 24 C8=560pF CT2 C7=560pF CT1 RT 27 R1=5.6kΩ 23 C6=0.01µF 10 OSC STBY4 8 STBY3 29 STBY2 STBY1 STBY 26 VO3B=-7.5V/10mA Q102 : CPH3308 VO4=12V/100mA to STBY4 CSOFT4 20 18 19 Co16=10µF + + Co14=4.7µF R16=16kΩ DTC4 - R19=100Ω VO3=3.3V/140mA D3 : SBS004 Q1 : MCH3409 15 VO3A=15V/15mA Co5=3.3µF R15= 9.75kΩ C14=1µF C20=33pF 4 FB3 C13=0.047µF to VO4 D2 : SBS005 T1 Ro9=100kΩ 12 OUT3 Co3=3.3µF + + - Ro11=47kΩ Ro10=1kΩ + + Co4=3.3µF DTC3 11 16 Co1=2.2µF R11=16kΩ 14 VBIAS C3=10µF R10= 10kΩ C12=1µF C19=33pF R14=100Ω C16=2.2µF R12b=1.1kΩ R13=5.1kΩ R12a=27kΩ to VO3 R17b=5.6kΩ R18=5.1kΩ R17a=110kΩ CSOFT2 5 VO1=3.3V/500mA Co17=0.47µF 7 R9=1kΩ 2 Co9=10µF + L3 : 22µH OUT2 Co7=4.7µF 3 - - C2=1000pF R7b=1.3kΩ R8=5.1kΩ R7a=27kΩ CAPL2 + + Q103 : CPH3215 ILA07052 T1 = Sumida product L3 = TDK product: RLF5018-220MR63 L4 = TDK product: RLF5018-150MR63 L7 = Toko product: 636CY-470M L9 = Toko product: 636CY-100M No.8214-6/12 LA5683T SCP Pin SCP[V] Charging of the SCP block starts when FB1 to FB4 are set to a low level due to a load shorting and the protection circuit is activated if the block does not reset itself within the preset time tSCP (the protection circuit then turns off the whole OUT channels). Charge with ISCP 1.25[V] Charging tSCP SCP operation SCP Charging CSCP × VSCP tSCP = ISCP [S] Dead Time Setup • The dead time of channel 1 can be set by the voltage at DTC1. VREF Waveform of triangular wave input to PWM comparator VTH1_DTC DTC1 VDTC1 VTH2_DTC VDTC1 The duty cycle D1 is calculated as follows: D1 = VDTC1 − VTH2_DTC VTH1_DTC − VTH2_DTC × 100[ % ] • Channel 2 The dead time of channe 2 is fixed internally and the setting duty is 100%. No.8214-7/12 LA5683T • Channel 3 The dead time of channel 3 can be set by the voltage at DTC3. VREF Waveform of triangular wave input to PWM comparator VTH3_DTC DTC3 VDTC3 VTH4_DTC VDTC3 The duty cycle D3 is calculated as follows: D3 = VDTC3 − VTH4_DTC VTH3_DTC − VTH4_DTC × 100[ % ] • Channel 4 The dead time of channel 4 can be set in the same manner as that of channel 3. No.8214-8/12 LA5683T Procedure for Setting the Software Start Time • Channel 1 (the procedure is the same for channels 2, 3, and 4.) The software start time of channel 1 is set by the capacitance of the capacitor connected between pin CSOFT1 to CSOFT4 and GND. • VSOFT VCSOFT [V] • VB=0.5[V] Software start time tSOFT [S] Charging Set output voltage (VO): constant Set output voltage (VO) ISF=3.95µA VCC IN- t SOFT = -CSOFT × R SF 1n(1 - VB=0.5V CSOFT VB R SF × ISF RSF 200kΩ CSOFT ) [S] * The formula is for channel 1. The software start time for channels 2 to 4 can be calculated in the same manner. No.8214-9/12 LA5683T CT1 and CT2 The waveform of CT1 is 180 degrees out of phase with that of CT2. Their frequency cannot be set independently. The capacitance of the capacitors to be connected to pins CT1 and CT2 must be the same. • Setting the oscillation frequency (1) The oscillation frequency of the oscillator can be set by selecting the capacitance of the capacitors connected to pins CT1 and CT2 (see Figure 1). (2) The oscillation frequency can also be determined by the resistance of the resistor connected to the RT pin (see Figure 2). Figure 1 Oscillation Frequency vs. Timing Capacitance Characteristics Ta=25°C Reference data 2000 VCC=3.0V RT=5.6kΩ 1600 CT1 and CT2 have the same capacitance. 1400 VCC=3.0V CT1/CT2=560pF 1200 Oscillation frequency, f - kHz 1800 Oscillation frequency, f - kHz 1400 Figure 2 Oscillation Frequency vs. Timing Resistance Characteristics Reference data Ta=25°C 1200 1000 800 600 400 1000 800 600 400 200 200 0 7 100 2 3 5 7 1k 2 3 Capacitors CT1 and CT2 Capacitance - pF 5 0 1.0 7 10k ILA07008 2 3 5 7 2 10 3 Resistor RT Resistance - kΩ 5 ILA07009 Sample Circuits Sample Circuit That Makes Use of VBIAS (1) This IC can be used to implement the circuit that is shown below since the power to the channels 3 and 4 output stages is supplied via VBIAS. Apply VO1 that is dropped to 3.3V in channel 1 to VBIAS. A voltage of approx. VBIAS3-1 volt develops at VOUT3, so that the IC can drive MOS transistors in a low-voltage environment like this sample circuit. VBIAS VCC L Schottky barrier diode VO3=3.3V OUT3 SW to IN3− VOUT3 MCH3409 Schottky barrier diode VCC MCH3309 L VO1=3.3V to IN1− VBIAS Circuit Example 1 to OUT1 No.8214-10/12 LA5683T Sample Circuit That Makes Use of VBIAS (2) This IC can be used to implement the circuit that is shown below since the power to the channels 3 and 4 output stages is supplied via VBIAS. Apply the power voltage to VBIAS through the path that is made up of VCC, L to Schottky diode (through path formation). Then feed the stabilized voltage VO3 that is raised to 3.3V in channel 3 to VBIAS. A voltage of approx. VBIAS3-1 volt develops at VOUT3, so that the IC can drive MOS transistors in a low-voltage environment like this sample circuit. Fed to VBIAS VBIAS Schottky barrier diode VCC L VO3=3.3V OUT3 SW VOUT3 to IN3− MCH3409 VBIAS Circuit Example 2 Using the IC in a Step-down Circuit (CH1 and CH2) The IC detects a short-circuit condition and activates the SCP when VCC falls below the preset voltage VO+VF in such a step-down application as the one shown below. VO1 VF (diode forward voltage) VO1 VCC VF VCC IN+ SCP activated OUT 1.8V VCC When stepping down VCC<V0+VF No.8214-11/12 LA5683T Using the IC in a Step-up Circuit (CH3 and CH4) In a step-up application like the one shown below, a through path consisting of VCC, L, and D is formed when STBY is set off and a voltage normally remains present at VO. * Although the STBY off-time through path in the application circuit example is cut by a MOSFET, a voltage remains present at VO after an SCP operation performed with STBY set on. VCC L IOFF VO D IN− OUT Figure Used with a Chopper Type Step-up Circuit Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.8214-12/12