SANYO LV5106FN

Ordering number : EN8931
Bi-CMOS IC
LV5106FN
For cell phone system
Power supply
Overview
The LV5106FN is a power supply for a cell phone system that integrates four series regulators, two de-writers, and an LED
driver (with 5V output) on a single chip.
Functions
• REG×4 (CMOS output)
• DET circuit (one for REG1, one for VBAT (with reset output)
• Thermal shutdown circuit (150°C)
• Three-color LED driver (charge pump 5V output incorporated)
• FRONT LED driver
• Mic bias output
Features
• Low power consumption
• Built-in charge pump circuit
• Built-in 3-color LED drive circuit
4μA when REG4 and VBATDET operate
30μA when REG1, REG2, REG3, and REG4 + DET1 and VBATDET operate
VBAT : 3.2V to 4.5V, 5V constant output with a load of 80mA
Three independent colors, 128-step PWM intensity control
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Allowable power dissipation
Symbol
Conditions
VCC max
Pd max
Ratings
Unit
7
Ta ≤ 75°C *Mounted on a board.
440
V
mW
Operating temperature
Topr
-30 to +75
°C
Storage temperature
Tstg
-40 to +125
°C
∗ Mounted on a 50.0mm×50.0mm×0.8mm, glass epoxy board.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
61307 TI PC B8-6923 No.8931-1/6
LV5106FN
Operating Conditions at Ta = 25°C
Parameter
Symbol
Supply voltage 1
VBAT
Supply voltage 2
VBATCP
Conditions
Ratings
Unit
29, 33pin
3.2 to 4.5
V
3pin
3.2 to 5.9
V
Electrical Characteristics Ta = 25°C, VBAT = 3.6V, VCHARGE = 0V, unless otherwise specified.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Analog :
Current dissipation
Current dissipation 1
ICC1
REG4, VBATDET : ON
4
10
μA
25
35
μA
20
28
μA
30
42
μA
15
21
μA
5
8
mA
REG1, 2, 3, charge punp, DET1 : OFF no-load
VBAT = 3.2V to 4.2V
Current dissipation 2
ICC2
REG1, 2, 4, DET1, VBATDET : ON
REG3, charge pump : OFF no load
Current dissipation 3
ICC3
REG3, 4, VBATDET : ON
REG1, 2, DET1, charge pump : OFF no load
Current dissipation 4
ICC4
REG1, 2, 3, 4, DET1, VBATDET : ON
charge pump : OFF no load
Current dissipation 5
ICC5
REG1, 2, 3, 4, DET1, VBATDET : ON
charge pump : OFF no load ECO : L
Current dissipation 6
ICC6
REG1, 2, 3, 4, charge pump, DET1, VBATDET :
ON no load
REG1
Output voltage 1
VO1
IO = 30mA, ECO = H
2.74
2.8
2.86
V
Output voltage 2
VO1E
IO = 30mA, ECO = L
2.71
2.8
2.89
V
Output voltage 3
ΔVO1
(IO = 30mA, REG1 output voltage at ECO = H) (IO = 10mA, REG1 output voltage at IO = 10 mA
0
15
35
mV
Output voltage 4
ΔVO2
35
mV
and ECO = L)
IO = 30mA
-35
(charge-pump on-time REG1 output voltage) –
(charge-pump off-time REG1 output voltage)
Drop out voltage
VDR1
VBAT = 2.7V, IO = 30mA
0.04
0.06
Load regulation
ΔVOLO1
IO = 1 to 150mA
10
50
mV
Line regulation
ΔVOLN1
VBAT = 3.3 to 4.5V, IO = 1mA
10
60
mV
Output voltage temperature
ΔVO1/ΔTj
Ta = -25 to 75°C, IO = 30mA
±100
V
ppm/°C
coefficient
Ripple rejection
VR1
VBAT = 3.6V, IO = 30mA, VRR = -20dBV,
65
dB
75
μVrms
fRR = 1kHz
Output noise voltage
VON1
IO = 30mA, 20Hz < f < 20kHz
REG2
Output voltage 1
VO2
IO = 30mA, ECO = H
2.55
Output voltage 2
VO2E
IO = 30mA, ECO = L
2.53
Drop out voltage
VDR1
VBAT = 2.5V, IO = 30mA
Load regulation
ΔVOLO2
IO = 1 to 100mA
Line regulation
ΔVOLN2
VBAT = 3.3 to 4.5V, IO = 1mA
Output voltage temperature
ΔVO2/ΔTj
Ta = -25 to 75°C, IO = 30mA
2.6
2.65
V
2.6
2.67
V
0.06
0.12
V
10
100
mV
10
60
±100
mV
ppm/°C
coefficient
Ripple rejection
VR2
VBAT = 3.6V, IO = 30mA, VRR = -20dBV,
65
dB
75
μVrms
fRR = 1kHz
Output noise voltage
VON2
IO = 30mA, 20Hz < f < 20kHz
Continued on next page.
No.8931-2/6
LV5106FN
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
REG3
Output voltage 1
VO3
IO = 30mA, ECO = H
2.45
2.5
2.55
V
Output voltage 2
VO3E
IO = 30mA, ECO = L
2.43
2.5
2.57
V
Drop out voltage
VDR3
0.06
0.12
Load regulation
ΔVOLO3
IO = 1 to 50mA
VBAT = 2.4V, IO = 30mA
10
50
mV
Line regulation
ΔVOLN3
VBAT = 3.3 to 4.5V, IO = 1mA
10
60
mV
Output voltage temperature
ΔVO3/ΔTj
Ta = -25 to 75°C, IO = 30mA
±100
V
ppm/°C
coefficient
Ripple rejection
VR3
VBAT = 3.6V, IO = 30mA, VRR = -20dBV,
65
dB
75
μVrms
fRR = 1kHz
Output noise voltage
VON3
IO = 30mA, 20Hz < f < 20kHz
REG4
Output voltage
VO4
IO = 30mA
2.91
VBAT = 2.9V, IO = 30mA
3
3.09
V
Drop out voltage
VDR3
0.06
0.12
Load regulation
ΔVOLO4
IO = 1 to 50mA
10
50
mV
Line regulation
ΔVOLN4
VBAT = 3.3 to 4.5V, IO = 1mA
10
60
mV
Output voltage temperature
ΔVO4/ΔTj
Ta = -25 to 75°C, IO = 30mA
±100
V
ppm/°C
coefficient
Ripple rejection
VR4
VBAT = 3.6V, IO = 30mA, VRR = -20dBV,
55
dB
75
μVrms
fRR = 1kHz
Output noise voltage
VON4
IO = 30mA, 20Hz < f < 20kHz
DET1
Detection voltage
VD1
Hysteresis width
ΔVH1
Detection voltage temperature
ΔVD1/ΔTj
H→L
2.45
2.5
2.55
V
75
125
175
mV
±100
Ta = -25 to 75°C
ppm/°C
coefficient
VBATDET
Detection voltage
VDB
Hysteresis width
ΔVHB
Output pull-up resistance
RPDETB
Detection voltage temperature
ΔVDB/ΔTj
H→L
3.04
3.1
3.16
V
93
155
217
mV
1.8
2.2
1.4
±100
Ta = -25 to 75°C
MΩ
ppm/°C
coefficient
Charge pump
Output voltage 1
VCPO1
Oscillation frequency
CPOSC
Output ripple
Efficiency
VBAT = 3.2 to 5.9V, Load current 80mA
4.8
5
5.2
V
0.7
1
1.3
MHz
VRCP
VBAT = 3.6, Load current 80mA
±200
η
VBAT = 3.2, Load current 80mA
72
mVp-p
%
LED driver
LEDR output voltage
VLR
IO = 40mA
0
0.1
0.2
V
LEDG output voltage
VLG
IO = 40mA
0
0.1
0.2
V
LEDB output voltage
VLB
IO = 40mA
0
0.1
0.2
V
LEDF output voltage
VLF
IO = 40mA
0
0.15
0.3
V
LEDR OFF leak
ILR
0
1
μA
LEDG OFF leak
ILG
0
1
μA
LEDB OFF leak
ILB
0
1
μA
LEDF OFF leak
ILF
0
1
μA
Mic bias
Output ON resistance
RMO
OFF leakage current
ILM
IO = 10mA
Ω
10
0
1
μA
REG10
V
0.3
V
Output voltage (GP_0, 1)
Output H level
VOH
IO = 1mA
REG10
-0.3
Output L level
VOL
IO = 1mA
0
Continued on next page.
No.8931-3/6
LV5106FN
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input voltage 1 (SDATA, SEN, SCLK)
H level
VINH1
Input H level
REG10
REG10
V
REG10
V
×0.8
L level
VINL1
Input L level
0
×0.2
Input voltage 2 (T_CNT, TCXOCNT, ECO, REG3CTL, REG12CTL, PWRON, RTCINT, MSSELO, MSSELOC, KEYSENSE4, HWRESET)
H level
VINH2
Input H level
REG40
REG40
V
REG40
V
×0.8
L level
VINL2
Input L level
0
×0.2
Input voltage 3 (RESOUT_N)
H level
VINH3
Input H level
REG40
REG40
V
REG40
V
×0.8
L level
VINL3
Input L level
0
×0.2
Input voltage 4 (CHG_G)
H level
VINH4
Input H level
REG40
6
V
REG40
V
×0.8
L level
VINL4
Input L level
0
×0.2
Input voltage 5 (Vcharge)
H level
VINH5
Input H level
4.4
6
V
L level
VINL5
Input L level
0
3.6
V
VINH6
Input H level
REG40
VBAT
V
REG40
V
Input voltage 6 (VBATBK)
H level
×0.8
L level
VINL6
Input L level
0
×0.2
Serial bus :
Serial transfer timing
Cycle time
tcy1
SCLK clock cycle
300
ns
Data setup time 1
ts0
SDEN setup time for rise of SCLK
150
ns
Data setup time 2
ts1
SDATA setup time for rise of SCLK
150
ns
Data hold time 1
th0
SDEN hold time for fall of SCLK
150
ns
Data hold time 2
th1
SDATA hold time for rise of SCLK
150
ns
Pulse width 1
tw1L
SCLK L-period pulse width
150
ns
Pulse width 2
tw1H
SCLK H-period pulse width
150
ns
Pulse width 3
tw2L
SDEN L-period pulse width
1
μs
Package Dimensions
unit : mm (typ)
3272
Top View
Bottom View
0.2
7.2
7.0
36
25
5.0
5.0
0.3
7.0
7.2
48
0.4
24
37
13
1
12
0.5
Side View
4 - Do Not Connect
0.2
(0.8)
0.85MAX
(0.75)
0.4
0.3
SANYO : VQFN48(7X7)
No.8931-4/6
LV5106FN
Serial transfer timing conditions
50%
SDEN
th0
ts0
tw2L
SCLK
50%
tw1L
tw1H
th1
ts1
tcy1
SDATA
A7
A6
A5
A4
A3
A2
A1
A0
D15 D14 D13
D3
Address
D2
D1
D0
A7
Data
Data length
: 24bit
Clock frequency
: 3MHz or les
"SDATA" is taken in at fall of "SDEN" when "SCLK" of 24 clock is entered during H period of "SDEN."
(Note) "SDATA" is not taken in when "SCLK" is 23 clock or less during H period of "SDEN."
When "SCLOCK" exceeds 25 clock, "SDATA" is taken in at the 24th clock, and subsequent "SDATA" is
ignored.
PWRON
RTCINT
RREF
0.1μF
0.1μF
BG
GNDR
TEST2
MSSELO
31
30
2.8V 150mA
29
28
27
ECO
DET1
REG1O
REG1OS
4.7μF
4.7μF
3.0V 50mA
32
VBAT14
33
REG4O
34
REG3O
VBAT23
35
REG3CTL
REG2O
36
MICBIAS
REG12CTL
4.7μF
4.7μF
2.5V 50mA
2.6V 100mA
Block Diagram
26
25
1MΩ
37
24
Seril
38
39
REG
3
REG
2
REG
4
REG
1
22
REG12CTL
REG12CTL REG3CTL
40
DET1
REG12CTL
41
VBAT
VBATDET
BGR
21
20
1.8MΩ
VBAT
42
23
19
43
18
44
17
MSSELOC
16
15
PWM_B
5
6
7
8
9
10
FLED
4
BLED
3
GNDLED
2
GLED
1
RLED
48
11
12
SDATE
Serial
CTL
TEST
CHARGE
PUMP
47
PWM_G
PWM_R
46
CPOUT
VCHARGE
Counter
C+
HWRESET
OSC
45
VBATCP
RESOUT_N
C-
KEYSENSE4
GNDCP
XXμF
14
13
RESETL
CD
0.1μF
TCXOCNT
P_CNT
T_CNT
TT
XXμF
VBATBK
CHG_G XXμF
GP_1
GP_0
SCLK
SEN
0.22μF
1μF
4.7μF
Top view
No.8931-5/6
LV5106FN
Power Control Block Diagram
REG4O
PWRON
P_CNT
1000kΩ
REG4O REG4O
MSSELO
1000kΩ
REG4O
10kΩ
MSSELOC
REG4O
REG4O
REG4O
RTCINT
REG4O
10kΩ
T_CNT
REG4O
KEYSENSE4
2000kΩ
REG4O
RESOUT_N
REG4O
REG4O
HWRESET
100kΩ
2kΩ 120kΩ REG4O REG4O
VCHARGE
10kΩ
100kΩ
REG4O
CHG(G)
REG4O REG4O
VBATBK
VBAT
1000kΩ
REG4O
TCXOCNT
TT
1000kΩ
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
PS No.8931-6/6