TF222B Ordering number : ENA0171 TF222B N-channel Silicon Junction FET Condenser Microphone Applications Features • • • • • Especially suited for use in condenser microphone for audio equipments and telephones. TF222B is possible to make applied sets smaller and thinner. Excellent voltage characteristic. Excellent transient characteristic. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions Ratings VGDO IG Gate Current Drain Current Unit --20 V 10 mA 1 mA 100 mW Junction Temperature ID PD Tj 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current V(BR)GDO VGS(off) Forward Transfer Admittance IDSS yfs Input Capacitance Ciss Reverse Transfer Capacitance Crss Conditions IG=--100µA VDS=2V, ID=1µA VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz Ratings min Voltage Gain GV ∆GVV max --20 Unit V --0.1 --1.0 V 140* 350* µA 0.5 VDS=2V, VGS=0V, f=1MHz [Ta=25˚C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Reduced Voltage Characteristics typ VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=2.0→1.5V 1.4 mS 5.0 pF 1.1 pF --2.0 --0.6 dB --2.0 dB Continued on next page. * : The TF222B is classified by IDSS as follows : (unit : µA) Rank B4 B5 IDSS 140 to 240 210 to 350 Marking : B Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2805GB MS IM TB-00001894 No. A0171-1/4 TF222B Continued from preceding page. Parameter Symbol Frequency Characteristics ∆Gvf f=1kHz to 110Hz Total Harmonic Distortion THD VIN=30mV, f=1kHz Output Noise Voltage VNO VIN=0V, A curve Package Dimensions unit : mm 7048-001 min typ --1.0 dB --102 dB 0.7 Voltage gain Frequency Characteristics Distortion Reduced Voltage Characteristics 1.2 % 2.2kΩ 0.11 VCC=2V VCC=1.5V 3 33µF + 5pF 0 to 0.02 0.8 1.2 Unit max Test Circuit Top View 0.2 Ratings Conditions 2 0.2 1 VTVM V 0.2 THD B A OSC 0.38 0.4 Output Impedance 1 2 0.15 1 : Drain 2 : Source 3 : Gate 3 Bottom View ID -- VDS ID -- VDS 400 300 VGS=0V 200 --0.1V 100 Drain Current, ID -- µA 400 Drain Current, ID -- µA SANYO : TSSFP 300 VGS=0V 200 --0.1V 100 --0.2V --0.4V --0.2V --0.4V --0.3V 0 1 2 3 4 5 Drain-to-Source Voltage, VDS -- V 0 1.0 1.5 2.0 IT04744 ID -- VGS 500 VDS=2V VDS=2V 400 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V A 0µ 15 100 25 ID SS = 35 200 0µ A 0µ A 300 300 Ta =7 5°C 25 °C --2 5°C Drain Current, ID -- µA 400 0 --1.0 0.5 Drain-to-Source Voltage, VDS -- V IT04743 ID -- VGS 500 Drain Current, ID -- µA --0.3V 0 0 200 100 0 IT04745 0 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 IT04746 No. A0171-2/4 TF222B VGS(off) -- IDSS Cutoff Voltage, VGS(off) -- V --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 100 200 300 400 1.6 1.4 1.2 1.0 0.8 0 7 5 3 2 3 5 7 2 1.0 3 5 Drain-to-Source Voltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF 10 2 10 IT10230 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 0 100 200 300 400 Drain Current, IDSS -- µA 2 1.0 7 5 2 3 5 0.6 0.4 0.2 0 2 1.0 3 5 7 10 IT10231 ∆GVV : VCC=2V→1.5V VIN=10mV f=1kHz IDSS : VDS=2V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 100 200 300 400 Drain Current, IDSS -- µA 500 IT04752 PD -- Ta 120 0.8 7 ∆GVV -- IDSS 0 0 Allowable Power Dissipation, PD -- mW 1.0 3 IT04751 THD : VCC=2V VIN=30mV f=1kHz IDSS : VDS=2V 500 IT04748 VGS=0V f=1MHz 500 THD -- IDSS 1.2 400 Drain-to-Source Voltage, VDS -- V Reduced Voltage Characteristics, ∆GVV -- dB GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 300 Crss -- VDS 3 0.1 7 GV -- IDSS --0.5 200 Drain Current, IDSS -- µA 5 VGS=0V f=1MHz 1.0 0.1 100 IT04747 Ciss -- VDS 2 Input Capacitance, Ciss -- pF 1.8 500 Drain Current, IDSS -- µA Voltage Gain, GV -- dB VDS=2V VGS=0V f=1kHz 0.6 0 Total Harmonic Distortion, THD -- % yfs -- IDSS 2.0 VDS=2V ID=1µA Forward Transfer Admittance, yfs -- mS --0.7 100 80 60 40 20 0 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT04753 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR02650 No. A0171-3/4 TF222B Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PS No. A0171-4/4