TF202THC Ordering number : ENA1285 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET TF202THC Electret Condenser Microphone Applications Features • • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Symbol Conditions Ratings VGDO IG Allowable Power Dissipation ID PD Junction Temperature Tj Storage Temperature Tstg Unit --20 V 10 mA 1 mA 100 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Symbol V(BR)GDO VGS(off) Conditions Ratings min IG=--100μA --20 VDS=5V, ID=1μA --0.2 typ max Unit V --0.6 --1.0 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 82008GB TI IM TC-00001480 No.A1285-1/5 TF202THC Continued from preceding page. Parameter Symbol Drain Current IDSS Forward Transfer Admittance | yfs | Ratings Conditions min typ 140* VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz Unit max 350* 0.5 1.0 μA mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz [Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] 3.5 pF Reverse Transfer Capacitance Crss 0.65 pF Voltage Gain GV VIN=10mV, f=1kHz --3.0 Reduced Voltage Characteristic ΔGVV VIN=10mV, f=1kHz, VCC=4.5V → 1.5V --1.2 Frequency Characteristic ΔGvf f=1kHz to 110Hz Input Impedance ZIN f=1kHz Output Impedance ZO f=1kHz Total Harmonic Distortion THD Output Noise Voltage VNO VIN=30mV, f=1kHz VIN=0V, A Curve dB --3.5 dB --1.0 dB 25 MΩ 1000 Ω 1.2 % --110 dB * : The TF202THC is classified by IDSS as follows : (unit : μA) Marking E4 Rank 4 E5 5 IDSS 140 to 240 210 to 350 Package Dimensions Test Circuit unit : mm (typ) 7031-001 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic Top View 0.2 1.4 0.25 1kΩ VCC=4.5V 0.8 1.2 3 VCC=1.5V 2 0.2 0.2 1 33μF + 15pF 0.1 0.34 0.45 VTVM V OSC 0.07 0.07 1 : Drain 2 : Source 3 : Gate SANYO : VTFP ID -- VDS 450 450 400 400 350 300 VGS=0V 250 200 --0.1V 150 100 --0.2V 50 --0.3V --0.4V 1 2 3 4 5 6 ID -- VDS 500 Drain Current, ID -- μA Drain Current, ID -- μA 500 0 B A Output Impedance Bottom View 0 THD 7 --0.5V 8 Drain-to-Source Voltage, VDS -- V 9 10 IT02310 350 300 VGS=0V 250 200 --0.1V 150 100 --0.2V 50 --0.3V --0.4V 0 0 1 2 3 --0.5V 4 5 Drain-to-Source Voltage, VDS -- V IT03015 No.A1285-2/5 TF202THC ID -- VGS 500 450 200 A 0μ ID 150 25 A 50 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V | yfs | -- IDSS 1.3 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 Gate-to-Source Voltage, VGS -- V IT02312 1.0 0.9 0.8 0.7 0.6 --0 VDS=5V ID=1μA -0.65 1.1 --0.1 IT02313 VGS(off) -- IDSS -0.70 VDS=5V VGS=0V f=1kHz 1.2 0 --1.0 0 Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, | yfs | -- mS 120 40 0 --0.7 -0.60 -0.55 -0.50 -0.45 -0.40 -0.35 0.5 -0.30 0 100 200 300 400 Drain Current, IDSS -- μA 500 IT02314 0 7 5 3 2 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V --1 --2 --3 --4 --5 --6 --7 0 100 200 300 Drain Current, IDSS -- μA 400 500 IT13910 400 500 IT02315 Crss -- VDS VGS=0V f=1MHz 2 1.0 7 5 3 2 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V IT03814 GV : VCC=4.5V VIN=10mV f=1kHz RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V 300 3 0.1 3 Reduced Voltage Characteristic, ΔGVV -- dB GV -- IDSS 0 Reverse Transfer Capacitance, Crss -- pF 10 1.0 200 5 VGS=0V f=1MHz 7 100 Drain Current, IDSS -- μA Ciss -- VDS 2 Input Capacitance, Ciss -- pF 160 80 0μ 15 200 25 °C A 0μ 5 =3 SS --2 250 240 5° C 300 280 75 °C 350 Ta = Drain Current, ID -- μA Drain Current, ID -- μA 320 100 Voltage Gain, GV -- dB VDS=5V 360 400 1.0 ID -- VGS 400 VDS=5V ΔGVV -- IDSS --0.5 3 IT03815 --0.7 --0.9 --1.1 ΔGVV : VCC=4.5V→1.5V VIN=10mV f=1kHz RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V --1.3 --1.5 --1.7 0 100 200 300 Drain Current, IDSS -- μA 400 500 IT13911 No.A1285-3/5 TF202THC THD -- IDSS THD : VCC=4.5V VIN=30mV f=1kHz RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V 2.0 1.5 1.0 0.5 200 300 400 ZIN -- IDSS Input Impedance, ZIN -- MΩ 32 ZIN :VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 31 30 29 28 250μA 10 150μA I DSS= 350μA 1.0 500 IT13912 0 50 100 150 200 Input Voltage, VIN -- mV ZO : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 950 27 IT02316 ZO -- IDSS 960 Output Impedance, ZO -- Ω 100 Drain Current, IDSS -- μA 940 930 920 910 26 900 100 200 300 400 Drain Current, IDSS -- μA VNO -- IDSS --111 500 IT02323 --113 --114 --115 --116 --117 --118 --119 --120 100 200 300 Drain Current, IDSS -- μA 200 400 500 IT13913 300 400 Drain Current, IDSS -- μA PD -- Ta 500 IT02324 100 80 60 40 20 0 0 100 120 VNO : VCC=4.5V VIN=0V, ACurve RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V --112 0 Allowable Power Dissipation, PD -- mW 0 Output Noise Voltage, VNO -- dB THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V 0.1 0 0 THD -- VIN 100 Total Harmonic Distortion, THD -- % Total Harmonic Distortion, THD -- % 2.5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02317 No.A1285-4/5 TF202THC SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2008. Specifications and information herein are subject to change without notice. PS No.A1285-5/5