TIG014TS Ordering number : ENN8216 TIG014TS N-Channel IGBT Light-Controlling Flash Applications Features • • • • • Low-saturation voltage. 4V drive. Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) VCES VGES Gate-to-Emitter Voltage (Pulse) VGES Collector Current (Pulse) ICP Channel Temperature Storage Temperature Conditions Ratings PW≤1ms PW≤500µs, duty cycle≤0.5% Unit 400 V ±6 V ±8 V 150 A Tch 150 °C Tstg --40 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current V(BR)CES ICES Conditions IC=5mA, VGE=0 Ratings min typ max 400 Unit V VCE=320V, VGE=0 10 µA ±10 µA IGES VGE(off) VGE=±6V, VCE=0 Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage VCE(sat) IC=150A, VGE=4V 4.2 Input Capacitance Cies pF Coes VCE=10V, f=1MHz VCE=10V, f=1MHz 4400 Output Capacitance 65 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 60 pF VCE=10V, IC=1mA 0.5 1.2 V 5.8 V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505PJ TS IM TB-00001119 No.8216-1/4 TIG014TS Package Dimensions unit : mm 2244 Electrical Connection 3.0 5 E 6 E 5 1 C 2 C 3 C 4 C 6.4 4.5 0.5 8 E 7 0.425 0.95 0.65 G 8 0.95 4 0.25 0.125 0.05 1.0 1 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate SANYO : TSSOP8 IC -- VCE 200 180 160 V V 140 4.0 120 3.0V 100 2.5V Tc=25°C VCE=5V 180 .5V =4 GE Collector Current, IC -- A Collector Current, IC -- A IC -- VGE 200 Tc=25°C 80 60 160 140 120 100 80 60 40 40 20 20 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, VCE -- V 4.5 0 5.0 2.0 2.5 3.0 3.5 4.0 IT07621 VCE -- VGE 6.0 Tc=25°C Collector-to-Emitter Voltage, VCE -- V Tc= --25°C Collector-to-Emitter Voltage, VCE -- V 1.5 Gate-to-Emitter Voltage, VGE -- V VCE -- VGE 6.0 1.0 0.5 IT07620 5.5 5.0 4.5 4.0 IC =150A 3.5 130A 3.0 100A 2.5 2.0 1.5 5.5 5.0 4.5 4.0 IC =150A 3.5 130A 3.0 100A 2.5 2.0 1.5 1.0 1.0 0 1.0 2.0 3.0 4.0 5.0 Gate-to-Emitter Voltage, VGE -- V 6.0 IT07622 0 1.0 2.0 3.0 4.0 5.0 Gate-to-Emitter Voltage, VGE -- V 6.0 IT07623 No.8216-2/4 TIG014TS VCE -- VGE 6.0 VCE(sat) -- Tc 6 VGE=4V 5.5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V Tc=75°C 5.0 IC=1 50 4.5 A 4.0 130A 3.5 100A 3.0 2.5 2.0 0 1.0 2.0 3.0 4.0 4 130A 3 100A 2 1 --25 0 25 50 100 75 125 Case Temperature, Tc -- °C IT07624 VGE(off) -- Tc 1.0 0 --50 6.0 5.0 Gate-to-Emitter Voltage, VGE -- V 0.9 150 IT07625 Cies, Coes, Cres -- VCE 10000 7 5 Cies Cies, Coes, Cres -- pF 3 0.8 0.7 0.6 0.5 0.4 0.3 --50 VCE=10V IC=1mA 2 1000 7 5 3 2 100 7 5 Coes 3 Cres 2 10 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 0 160 Collector Current(Pulse), ICP -- A 5 tf td(off) 2 tr 1.0 7 5 RL=1.1Ω TC= 25°C VGE= 4.0V RG=30Ω 3 2 0.1 1.0 2 td(on) 3 5 7 10 2 3 5 7 100 Collector Current, IC -- A 2 3 IT07628 CM -- ICP 450 4 6 8 10 12 14 16 18 Collector-to-Emitter Voltage, VCE -- V 7 3 2 IT07626 SW Time -- IC 10 Switching Time, SW Time -- ns A 150 I C= 1.5 1.0 Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 5 20 IT07627 ICP -- VGE CM=400µF Tc=25°C 140 Tc=70°C 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V 7 8 IT07629 Maximum Capacitor, CM -- µF 400 350 300 250 200 150 VCM=330V Tc≤70°C VGE=4.2V RG≥42Ω 100 50 0 0 20 40 60 80 100 120 Collector Current(Pulse), ICP -- A 140 160 IT07630 No.8216-3/4 TIG014TS Note1. The gate series resistance RG must be 42Ω or more to protect the device when it is turned off. Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off. Note : TIG014TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8216-4/4