TND313S Ordering number : ENA0418 SANYO Semiconductors DATA SHEET ExPD (Excellent Power Device) TND313S General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications Features • • • • • • • • Inverter buffer. Monolithic structure (High voltage CMOS process adopted). Withstand voltage of 25V is assured. Wide range of operating voltage : 4.5V to 25V. Peak outpout current : 2A. Fast switching time (25ns typical at 1000pF load). Fully compatible input to TTL / CMOS. (VIH=not more than 2.6V, at VDD=4.5 to 25V) Built-in input pull-down resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Symbol Conditions Ratings VDD Input Voltage Allowable Power Dissipation Unit 0 to 25 VIN PD max V GND--0.3 to VDD+0.3 V 0.3 W Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Recommended Operating Conditions at Ta=25°C Parameter Symbol Conditions Ratings Unit Operating Supply Voltage VDD 4.5 to 25 V Operating Temperature Topr --40 to +125 °C Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V Parameter Turn-On Rise Time Turn-Off Fall Time Delay Time Symbol Conditions Ratings min typ Unit max tr tf CL=1000pF CL=1000pF 20 35 ns 25 40 ns tD1 tD2 CL=1000pF CL=1000pF 30 45 ns 45 60 ns Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0606IP TI IM TB-00001539 No. A0418-1/5 TND313S Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V Parameter Symbol Logic “1” Input Voltage VIH Logic “0” Input Voltage VIL Logic “1” Input Bias Current Logic “0” Input Bias Current IIN+ IIN-- High Level Output Voltage VOH Low Level Output Voltage VOL VDD Supply Current Isupp Output High Short Circuit Pulse Current IO+ IO-- Output Low Short Circuit Pulse Current Output On Resistance ROUT Ratings Conditions min typ Unit max 2.6 VIN=VDD=25V V 20 VIN=0V or VDD --1 IO=0A IO=0A 0.8 V 55 µA 1 µA VDD--0.1 V VDD=10V, VIN=3V, (both inputs) 1.0 VDD=10V, VIN=0V, (both inputs) VDD=18V, PW≤10µs, VOUT=0V 2.0 VDD=18V, PW≤10µs, VOUT=18V 2.0 0.1 V 4.5 mA 0.2 mA A A VDD=18V, Iload=10mA, VOUT=“H” 4 6 Ω VDD=18V, Iload=10mA, VOUT=“L” 3 5 Ω Package Dimensions unit : mm (typ) 7005-007 5 1 4 1.27 0.2 1 : NC 2 : IN A 3 : GND 4 : IN B 5 : OUT B 6 : VDD 7 : OUT A 8 : NC 0.1 5.0 1.5 1.8 MAX 0.43 0.595 6.0 4.4 0.3 8 SANYO : SOP8 Block Diagram VDD IN INVERTING OUT NON-INVERTING GND No. A0418-2/5 TND313S Switching Time Measuring Circuit VDD=18V 4.7µF 0.1µF TND313S INPUT A OUTPUT A 1000pF INPUT B OUTPUT B 1000pF INPUT RISE AND FALL TIMES=5ns INPUT +5V +0.4V 90% 10% tD1 +18V tD2 90% INVERTING OUTPUT 90% 10% 0V 10% tf tr tD1 tD2 +18V 90% NONINVERTING OUTPUT 90% 10% 10% 0V tr tr -- Tc 40 30 20 10 0 --50 0 25 50 75 100 125 40 30 20 10 150 0 20 10 15 20 25 30 IT03751 tf -- VDD 50 Turn-Off Fall Time, tf -- ns 30 10 Supply Voltage, VDD -- V VDD=18V VIN=5V CL=1000pF 40 5 IT03750 tf -- Tc 50 Turn-Off Fall Time, tf -- ns VIN=5V CL=1000pF 0 --25 Case Temperature, Tc -- °C 0 --50 tr -- VDD 50 VDD=18V VIN=5V CL=1000pF Turn-On Rise Time, tr -- ns 50 Turn-On Rise Time, tr -- ns tf VIN=5V CL=1000pF 40 30 20 10 0 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT03752 0 5 10 15 20 Supply Voltage, VDD -- V 25 30 IT03753 No. A0418-3/5 TND313S tD1 -- Tc 50 VDD=18V VIN=5V CL=1000pF VIN=5V CL=1000pF 80 Delay Time, tD1 -- ns Delay Time, tD1 -- ns 40 30 20 10 60 40 20 0 --50 0 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 150 0 5 10 15 20 25 Supply Voltage, VDD -- V IT03763 tD2 -- Tc 100 VIN=5V CL=1000pF VDD=18V VIN=5V CL=1000pF Delay Time, tD2 -- ns 60 40 30 IT03764 tD2 -- VDD 200 80 Delay Time, tD2 -- ns tD1 -- VDD 100 150 100 50 20 0 --50 0 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C Output "Low" Short Circuit Pulsed Current, IO(--) -- A 3 2 1 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 3.0 2.0 1.5 1.0 0.5 25 30 IT03757 3 2 1 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT03759 PD -- Ta 0.40 2.5 20 VDD=18V IT03758 VIN=5V CL=10µF 15 IO(--) -- Tc 0 --50 150 IO(±) -- VDD 3.5 10 4 VDD=18V 0 --50 5 Supply Voltage, VDD -- V Allowable Power Dissipation, PD -- W Output "High" Short Circuit Pulsed Current, IO(+) -- A 0 IT03756 IO(+) -- Tc 4 Output High/Low Short Circuit Pulsed Current, IO(±) -- A 150 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 0 5 10 15 20 Supply Voltage, VDD -- V 25 30 IT11081 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03760 No. A0418-4/5 TND313S Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0418-5/5