SEMIKRON SEMIX151GAL12T4S

SEMiX 151GB12T4s
Absolute Maximum Ratings
Symbol Conditions
IGBT
- () *
1
- '2) *
156
()*/ #
'(..
(3.
"
4. *
'4.
"
7).
"
9 (.
- '). *
'.
>
() *
'@.
"
4. *
'7.
"
7).
"
:..
"
1563+1
Trench IGBT Modules
:.. ; 8 < (. ;
= '(.. Inverse Diode
1?
- '2) *
1?56
SEMiX 151GB12T4s
Units
() *
8
SEMiX®1s
Values
1?563+1?
Module
SEMiX 151GAL12T4s
156
SEMiX 151GAR12T4s
-
A 7. ,,, B '2)
*
Target Data
A 7. ,,, B '()
*
7...
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
%# ! #
-').*
"/ ' ,
Characteristics
Symbol Conditions
IGBT
8
8 / 1 : "
1
8 . / .
8 ') max.
Units
)
)/4
:/)
- () *
./4
./@
- '). *
./2
./4
- ()*
:/2
2/3
C
- ').*
'.
'./2
C
'/4
(
(/(
(/7
- () *
()/ 8 . ' 6D
E8
8 A4 ,,, B')
58
- () *
5-A
1
typ.
1
'). "/ 8 ') - ()*,
58
C
58 C
GAL
min.
- ').*,
#
# GB
()*/ #
18H
1
"
- '). *
"
@/3
./:
?
?
./)
?
4).
)
F
'2
G
'2
G
./'@
IJ&
GAR
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
Characteristics
Symbol Conditions
Inverse Diode
? 1?
'). "; 8 . ?.
?
®
SEMiX 1s
Trench IGBT Modules
1556
E
1?
'). "
8 A') ; :.. 5-AK
##
min.
typ.
max.
Units
- () *,
(/')
(/7)
- '). *,
(/.)
(/7
- () *
'/3
'/)
- '). *
./@
'/'
- () *
)/2
:/3
C
- '). *
2/2
4/2
C
- '). *
"
>
''/3
G
./3'
IJ&
Module
L
SEMiX 151GB12T4s
5MBM
SEMiX 151GAL12T4s
,/ A
':
() *
./2
C
'() *
'
C
./.2)
IJ&
SEMiX 151GAR12T4s
5A
#
Target Data
6
N 6)
3
6
6:
(/)
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
)
O
)
O
').
Temperature sensor
5'..
'..* 5()) NC
./7@39)P
NC
H'..J'()
55'..+QH'..J'()'JA'J'..R;
3)).9(P
I
QIR
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
%# ! #
-').*
GB
2
GAL
GAR
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
Fig. 9 Typ. transient thermal impedance
4
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
%
5
8H
%
16-07-2007 SCH
8"L
%
8"5
© by SEMIKRON