SEMIKRON SEMIX253GD176HDC

SEMiX 253GD176HDc
Absolute Maximum Ratings
Symbol Conditions
IGBT
.
.12
4
6, SEMiX® 33c
Trench IGBT Modules
SEMiX 253GD176HDc
Preliminary Data
Features
!
Typical Applications
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Remarks
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Units
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Characteristics
Symbol Conditions
IGBT
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min.
typ.
max.
Units
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Thermal characteristics
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LFM
LFM
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Temperature sensor
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Mechanical data
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8
GD
1
01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 13 Typ. CAL diode recovered charge
4N
2T 33
2T 33
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
01-03-2006 GES
© by SEMIKRON