SEMiX 253GD176HDc
Absolute Maximum Ratings
Symbol Conditions
IGBT
.
.12
4
6, SEMiX® 33c
Trench IGBT Modules
SEMiX 253GD176HDc
Preliminary Data
Features
!
Typical Applications
" #
$%
#
Remarks
! # &
'((( # &
')((
)*+, #
)* 0( +
' 7%1".78 9 Values
Units
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)*( '0(
3((
5 )(
: ;( <<< = '*( ')*
"
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+
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);( '-(
3((
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'*((
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Inverse diode
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)* 0( +
' .>2
'( ? <? 6 )* +
Characteristics
Symbol Conditions
IGBT
)*+, #
min.
typ.
max.
Units
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*,0
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@,- '(,3
@,;
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',) ','
0,3 ')
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B
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),;* ),A
4
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7
4 , . @ "
4 (, , 6 )* ')* +
6 )* ')* +
4 '* , 6 )* ')* +
.
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D
# #
4 (, )* , ' 2C
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>
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B
#
F
# F
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4 5 '* 14
14 G, 6 ')* +
6 )* ')* +, '(( *(
H
Inverse diode
> 7
.112
I
.>
'*( "? 4 ( ? 6 )* ')*
+, 6 )* ')* +
6 )* ')* +
.>
'*( "? 6 )* ')* +
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4 ( ',- ',-
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B
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J
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Thermal characteristics
16:
16:N
16:>N
.4K
.
N#
>MN
1:
#
(,')
(,'-
LFM
LFM
LFM
(,(';
LFM
* 5*O
PG
3;)(
L
Temperature sensor
1)*
)* +
K)*F0*
1)1'QRK'F):'F'S ? RLS?K
Mechanical data
2F2
P 2* F 2@
3F),*
* F*
00)
8
GD
1
01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 13 Typ. CAL diode recovered charge
4N
2T 33
2T 33
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
01-03-2006 GES
© by SEMIKRON