SEMIKRON SEMIX754GB128D

SEMiX 754GB128D
Absolute Maximum Ratings
Symbol Conditions
IGBT
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Characteristics
Symbol Conditions
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GB
1
20-04-2007 SCH
© by SEMIKRON
SEMiX 754GB128D
Characteristics
Symbol Conditions
Inverse Diode
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®
SEMiX 4
SPT IGBT Modules
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Units
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Module
SEMiX 754GB128D
Preliminary Data
Features
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
20-04-2007 SCH
© by SEMIKRON
SEMiX 754GB128D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
20-04-2007 SCH
© by SEMIKRON
SEMiX 754GB128D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
20-04-2007 SCH
© by SEMIKRON
SEMiX 754GB128D
8R 6
5
:H
20-04-2007 SCH
© by SEMIKRON