SEMIKRON SEMIX604GB12T4S

SEMiX 604GB12T4s
Absolute Maximum Ratings
Symbol Conditions
IGBT
- () *
6
- '7) *
()*4 #
'(..
8'.
"
9. *
7..
"
'9..
"
< (.
- '). *
'.
A
() *
7.)
"
9. *
)()
"
'9..
"
=..
"
-
C D. ,,, E '7)
*
C D. ,,, E '()
*
D...
62:;+6
3
Trench IGBT Modules
SEMiX 604GB12T4s
=.. > 3 ? (. >
@ '(.. Inverse Diode
6B
- '7) *
6B2:
6B2:;+6B
Module
62:
Target Data
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
%# ! #
-').*
/
!
0
23
4
'4.54
23 4
'4.54
234+(4(5 4
24+.4)5 Units
() *
62:
SEMiX®4s
Values
"4 ' ,
Characteristics
Symbol Conditions
IGBT
3
3 4 6 (D "
6
3 . 4 .
3 ') ()*4 #
min.
typ.
max.
Units
)
)49
=4)
- () *
.49
.48
- '). *
.47
.49
- ()*
'47
'49
5
- ').*
(4)
(47
5
'49
(
(4(
(4D
- () *
6
=.. "4 3 ') - ()*,
- ').*,
()4 3 . ' :F
"
;74(
(4;
B
B
(4'
B
G3
3 C9 ,,, E')
;D..
23
- () *
'4()
H
23
'47 5
#I# )(.. "IA
23 '47 5
;))
8.
=(
)8.
''(
J
=(
J
#
# 2-C
63K
=..
6
=.."
- '). *
.4.D8
LI&
GB
1
20-07-2007 SCH
© by SEMIKRON
SEMiX 604GB12T4s
Characteristics
Symbol Conditions
Inverse Diode
B 6B
=.. "> 3 . B.
B
®
SEMiX 4s
Trench IGBT Modules
622:
G
6B
=.. "
#I# )(.. "IA
3 C') > =.. 2-C/
##
min.
typ.
max.
Units
- () *,
(4')
(4D)
- '). *,
(4.)
(4D
- () *
'4;
'4)
- '). *
.48
'4'
- () *
'4D
'4=
5
- '). *
'48
(4(
5
- '). *
;8.
8D
"
A
;)
J
.4.9=
LI&
Module
SEMiX 604GB12T4s
Target Data
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
M
2NEN
,4 C
((
() *
.47
5
'() *
'
5
.4.;
LI&
2C
#
:
O :)
;
:
:=
(4)
)
P
)
P
D..
Temperature sensor
2'..
'..* 2()) O5
.4D8;<)Q
O5
K'..I'()
22'..+RK'..I'()'IC'I'..S>
;)).<(Q
L
RLS
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
%# ! #
-').*
/
!
0
23
4
'4.54
23 4
'4.54
234+(4(5 4
24+.4)5 GB
2
20-07-2007 SCH
© by SEMIKRON
SEMiX 604GB12T4s
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
20-07-2007 SCH
© by SEMIKRON
SEMiX 604GB12T4s
Fig. 9 Typ. transient thermal impedance
4
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
20-07-2007 SCH
© by SEMIKRON
SEMiX 604GB12T4s
:T D
%
5
3K
20-07-2007 SCH
© by SEMIKRON