SEMiX 302GB066HD Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 3 ,5 ® SEMiX 2 '()5 % '( 7- )5 , &(- ) '( 7- )5 , &9( ) & Values Units 0-40- '(- 4:- 4-- 0-; '< =- >>> ? &9( &'( 8 8 8 ) =--- 85 & > Inverse diode Trench IGBT Modules SEMiX 302GB066HD $@ $@ $@#! '( 7- )5 , &(- ) '( 7- )5 , &9( ) & 4-- '-- 44- '=- 0-- 8 8 8 $@! &- 2 >2 , '( ) &=-- 8 Characteristics Symbol Conditions IGBT SEMiX 302GAL066HD SEMiX 302GAR066HD Target Data Features Typical Applications !" # $ $ Remarks % '()5 % 8 B -5: -57( &57 '57 $ 4-- 85 3 &( 5 (57 &5=( &59 &5: '5& D % % 3 -5 '( 5 & !C #E?E <5 '( &(- ) % F % F 4-- 5 $ 4-- 8 3 ;&( #3 #3 7 G5 , &(- ) , '( &(- )5 &75( &5' -5(( &7 @ @ @ -59 & B &&- F 704' F 9- : &' H Inverse Diode 3 <&( Thermal characteristics &(-)2 40- Units -5& & -5: 4 = %. / 0 12 3 / &( 2 , ,&(-) max. 3 5 $ 4 8 3 -5 5 , '( &(- ) , '( &(- ) 3 &( 5 , '( &(- ) A $##! I &'() " typ. 3 $ A $@ 4-- 82 3 - 2 , '( &(- )5 , '( &(- ) , '( &(- ) $@ 4-- 82 , '( &(- ) %F% 8F1 *% + % min. @ #,< #,<M #,<@M $3J $ M% @LM #< % &5= &5= &50 & -57( &54 &57 '94950 &5& &59 B 8 1 75= H -5&( -5'( KFL KFL KFL -5-=( KFL ( ;(N OG 4='- K Temperature sensor #'( '( ) J'(F7( #'#&"PJ&F'<&F&Q 2 PKQ2J Mechanical data !F! O !( F !0 GB 1 GAL 4F'5( ( F( '(- R GAR 24-11-2005 GES © by SEMIKRON SEMiX 302GB066HD Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 24-11-2005 GES © by SEMIKRON SEMiX 302GB066HD Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 24-11-2005 GES © by SEMIKRON SEMiX 302GB066HD Fig. 13 Typ. CAL diode recovered charge 3J !S ' !S ' This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 24-11-2005 GES © by SEMIKRON